Infineon Technologies SPI80N06S2L-11
- Part Number:
- SPI80N06S2L-11
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586836-SPI80N06S2L-11
- Description:
- MOSFET N-CH 55V 80A I2PAK
- ECAD Model:
-
- Datasheet:
- SP(P,I,B)80N06S2L-11
Infineon Technologies SPI80N06S2L-11 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SPI80N06S2L-11.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2004
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Reach Compliance Codeunknown
- Current Rating80A
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max158W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id2V @ 93μA
- Input Capacitance (Ciss) (Max) @ Vds2650pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)80A
- Drain-source On Resistance-Max0.0147Ohm
- Pulsed Drain Current-Max (IDM)320A
- Avalanche Energy Rating (Eas)280 mJ
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
SPI80N06S2L-11 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 280 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2650pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.A maximum pulsed drain current of 320A is the maximum peak drain current rated for this device.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SPI80N06S2L-11 Features
the avalanche energy rating (Eas) is 280 mJ
a continuous drain current (ID) of 80A
based on its rated peak drain current 320A.
SPI80N06S2L-11 Applications
There are a lot of Infineon Technologies
SPI80N06S2L-11 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 280 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2650pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.A maximum pulsed drain current of 320A is the maximum peak drain current rated for this device.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SPI80N06S2L-11 Features
the avalanche energy rating (Eas) is 280 mJ
a continuous drain current (ID) of 80A
based on its rated peak drain current 320A.
SPI80N06S2L-11 Applications
There are a lot of Infineon Technologies
SPI80N06S2L-11 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SPI80N06S2L-11 More Descriptions
MOSFET N-CH 55V 80A I2PAK
The three parts on the right have similar specifications to SPI80N06S2L-11.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionReach Compliance CodeCurrent RatingPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeView Compare
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SPI80N06S2L-11Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AASILICON-55°C~175°C TJTubeOptiMOS™2004e3Obsolete1 (Unlimited)3EAR99MATTE TINAVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose Power55VMOSFET (Metal Oxide)SINGLEunknown80A3R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE158W TcENHANCEMENT MODEN-ChannelSWITCHING11m Ω @ 40A, 10V2V @ 93μA2650pF @ 25V80A Tc80nC @ 10V4.5V 10V±20V80A0.0147Ohm320A280 mJNon-RoHS CompliantContains Lead- -
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AASILICON-55°C~175°C TJTubeOptiMOS™2003e3Discontinued1 (Unlimited)3EAR99MATTE TINAVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose Power30VMOSFET (Metal Oxide)SINGLEunknown80A3R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE167W TcENHANCEMENT MODEN-ChannelSWITCHING5.2m Ω @ 55A, 10V2V @ 110μA3320pF @ 25V80A Tc89.7nC @ 10V4.5V 10V±20V80A0.0075Ohm320A325 mJROHS3 CompliantLead Free
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AASILICON-55°C~175°C TJTubeOptiMOS™2003-Obsolete1 (Unlimited)3EAR99-AVALANCHE RATEDFET General Purpose Power55VMOSFET (Metal Oxide)SINGLEunknown80A3R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE250W TcENHANCEMENT MODEN-Channel-6.6m Ω @ 68A, 10V4V @ 180μA4540pF @ 25V80A Tc110nC @ 10V10V±20V80A0.0066Ohm320A530 mJNon-RoHS CompliantContains Lead
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AASILICON-55°C~175°C TJTubeOptiMOS™2003-Obsolete1 (Unlimited)3EAR99-AVALANCHE RATEDFET General Purpose Power55VMOSFET (Metal Oxide)SINGLEunknown80A3R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE215W TcENHANCEMENT MODEN-Channel-8m Ω @ 58A, 10V4V @ 150μA3800pF @ 25V80A Tc96nC @ 10V10V±20V80A0.008Ohm320A450 mJNon-RoHS CompliantContains Lead
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