Rohm Semiconductor SP8K4FU6TB
- Part Number:
- SP8K4FU6TB
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2474312-SP8K4FU6TB
- Description:
- MOSFET 2N-CH 30V 9A 8SOIC
- ECAD Model:
-
- Datasheet:
- SP8K4
Rohm Semiconductor SP8K4FU6TB technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor SP8K4FU6TB.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- ECCN CodeEAR99
- Max Power Dissipation2W
- Base Part Number*K4
- Element ConfigurationDual
- Power Dissipation2W
- Turn On Delay Time10 ns
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs17m Ω @ 9A, 10V
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds1190pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs21nC @ 5V
- Rise Time15ns
- Fall Time (Typ)22 ns
- Turn-Off Delay Time55 ns
- Continuous Drain Current (ID)9A
- Threshold Voltage2.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage30V
- FET FeatureLogic Level Gate
- Nominal Vgs2.5 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SP8K4FU6TB Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SP8K4FU6TB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SP8K4FU6TB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SP8K4FU6TB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SP8K4FU6TB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SP8K4FU6TB More Descriptions
Trans MOSFET N-CH Si 30V 9A 8-Pin SOP T/R
Compliant Surface Mount 22 ns Lead Free 15 ns No SVHC 17 mΩ 2.5 V
MOSFET, DUAL, NN, 30V, 9A; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 9A; Current Id Max: 9A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.012ohm; Pulse Current Idm: 36A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 4V; Voltage Vgs th Max: 2.5V; Voltage Vgs th Min: 1V
Compliant Surface Mount 22 ns Lead Free 15 ns No SVHC 17 mΩ 2.5 V
MOSFET, DUAL, NN, 30V, 9A; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 9A; Current Id Max: 9A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.012ohm; Pulse Current Idm: 36A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 4V; Voltage Vgs th Max: 2.5V; Voltage Vgs th Min: 1V
The three parts on the right have similar specifications to SP8K4FU6TB.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationECCN CodeMax Power DissipationBase Part NumberElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageFET FeatureNominal VgsREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishSubcategoryVoltage - Rated DCTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)FET TechnologyDrain Current-Max (Abs) (ID)Factory Lead TimeDrain to Source Voltage (Vdss)View Compare
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SP8K4FU6TBSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)SMD/SMTEAR992W*K4Dual2W10 ns2 N-Channel (Dual)17m Ω @ 9A, 10V2.5V @ 1mA1190pF @ 10V21nC @ 5V15ns22 ns55 ns9A2.5V20V30V30VLogic Level Gate2.5 VNo SVHCNoROHS3 CompliantLead Free------------------------ -
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJTape & Reel (TR)2004Active1 (Unlimited)-EAR992W*K5---2 N-Channel (Dual)83m Ω @ 3.5A, 10V2.5V @ 1mA140pF @ 10V3.5nC @ 5V6ns--3.5A----Logic Level Gate---ROHS3 CompliantLead FreeSILICONe2yes8Tin/Copper (Sn/Cu)FET General Purpose Power30VGULL WING2603.5A108Not Qualified2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING0.15Ohm14AMETAL-OXIDE SEMICONDUCTOR---
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJCut Tape (CT)2004Discontinued1 (Unlimited)-EAR992W*K4---2 N-Channel (Dual)17m Ω @ 9A, 10V2.5V @ 1mA1190pF @ 10V21nC @ 5V15ns--9A----Logic Level Gate---ROHS3 CompliantLead FreeSILICONe2-8TIN COPPERFET General Purpose Power30VGULL WING2609A108Not Qualified2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING0.024Ohm36AMETAL-OXIDE SEMICONDUCTOR9A--
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)-EAR992W*K1-2W6 ns2 N-Channel (Dual)51m Ω @ 5A, 10V2.5V @ 1mA230pF @ 10V5.5nC @ 5V8ns5 ns22 ns5A-20V30V-Logic Level Gate--NoROHS3 CompliantLead Free-----FET General Purpose Power---------ENHANCEMENT MODE---METAL-OXIDE SEMICONDUCTOR5A40 Weeks30V
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