Rohm Semiconductor SP8K4TB
- Part Number:
- SP8K4TB
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2477688-SP8K4TB
- Description:
- MOSFET 2N-CH 30V 9A 8-SOIC
- Datasheet:
- SP8K4TB
Rohm Semiconductor SP8K4TB technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor SP8K4TB.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingCut Tape (CT)
- Published2004
- JESD-609 Codee2
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishTIN COPPER
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- Max Power Dissipation2W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating9A
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number*K4
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs17m Ω @ 9A, 10V
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds1190pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs21nC @ 5V
- Rise Time15ns
- Continuous Drain Current (ID)9A
- Drain Current-Max (Abs) (ID)9A
- Drain-source On Resistance-Max0.024Ohm
- Pulsed Drain Current-Max (IDM)36A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SP8K4TB Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SP8K4TB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SP8K4TB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SP8K4TB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SP8K4TB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SP8K4TB More Descriptions
MOSFET 2N-CH 30V 9A 8-SOIC
PANASONIC ELECTRIC WORKS AQY280S PHOTOMOS RELAY, 350V, 120mA
OEMs, CMs ONLY (NO BROKERS)
PANASONIC ELECTRIC WORKS AQY280S PHOTOMOS RELAY, 350V, 120mA
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to SP8K4TB.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsConfigurationOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeContinuous Drain Current (ID)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)FET TechnologyFET FeatureRoHS StatusLead FreeTerminationElement ConfigurationPower DissipationDrain to Source Voltage (Vdss)Threshold VoltageDual Supply VoltageNominal VgsREACH SVHCTurn On Delay TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningFactory Lead TimeView Compare
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SP8K4TBSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON150°C TJCut Tape (CT)2004e2Discontinued1 (Unlimited)8EAR99TIN COPPERFET General Purpose Power30V2WGULL WING2609A10*K48Not Qualified2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE2 N-Channel (Dual)SWITCHING17m Ω @ 9A, 10V2.5V @ 1mA1190pF @ 10V21nC @ 5V15ns9A9A0.024Ohm36AMETAL-OXIDE SEMICONDUCTORLogic Level GateROHS3 CompliantLead Free----------------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-150°C TJTape & Reel (TR)2006-Obsolete1 (Unlimited)-EAR99---2W----------2 N-Channel (Dual)-25m Ω @ 6A, 10V2.5V @ 1mA1400pF @ 10V21.6nC @ 5V-6A----Logic Level GateROHS3 Compliant-SMD/SMTDual2W45V2.5V45V2.5 VNo SVHC-------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-150°C TJTape & Reel (TR)2004-Obsolete1 (Unlimited)-EAR99---2W----*K4-----2 N-Channel (Dual)-17m Ω @ 9A, 10V2.5V @ 1mA1190pF @ 10V21nC @ 5V15ns9A----Logic Level GateROHS3 CompliantLead FreeSMD/SMTDual2W-2.5V30V2.5 VNo SVHC10 ns22 ns55 ns20V30VNo-
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-150°C TJTape & Reel (TR)2004-Obsolete1 (Unlimited)-EAR99-FET General Purpose Power-2W----*K1----ENHANCEMENT MODE2 N-Channel (Dual)-51m Ω @ 5A, 10V2.5V @ 1mA230pF @ 10V5.5nC @ 5V8ns5A5A--METAL-OXIDE SEMICONDUCTORLogic Level GateROHS3 CompliantLead Free--2W30V----6 ns5 ns22 ns20V30VNo40 Weeks
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