Rohm Semiconductor SP8K1FU6TB
- Part Number:
- SP8K1FU6TB
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2474128-SP8K1FU6TB
- Description:
- MOSFET 2N-CH 30V 5A 8SOIC
- ECAD Model:
-
- Datasheet:
- SP8K1
Rohm Semiconductor SP8K1FU6TB technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor SP8K1FU6TB.
- Factory Lead Time40 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- Max Power Dissipation2W
- Base Part Number*K1
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time6 ns
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs51m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds230pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs5.5nC @ 5V
- Rise Time8ns
- Drain to Source Voltage (Vdss)30V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)5A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)5A
- Drain to Source Breakdown Voltage30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SP8K1FU6TB Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SP8K1FU6TB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SP8K1FU6TB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SP8K1FU6TB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SP8K1FU6TB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SP8K1FU6TB More Descriptions
Trans MOSFET N-CH 30V 5A 8-Pin SOP T/R
MOSFET 2N-CH 30V 5A 8SOIC
OEMs, CMs ONLY (NO BROKERS)
MOSFET, DUAL, NN, 30V, 5A; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:5A; Resistance, Rds On:0.082ohm; Voltage, Vgs Rds on Measurement:4V; Voltage, Vgs th Typ:2.5V; Case Style:SOP-8; ;RoHS Compliant: Yes
MOSFET 2N-CH 30V 5A 8SOIC
OEMs, CMs ONLY (NO BROKERS)
MOSFET, DUAL, NN, 30V, 5A; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:5A; Resistance, Rds On:0.082ohm; Voltage, Vgs Rds on Measurement:4V; Voltage, Vgs th Typ:2.5V; Case Style:SOP-8; ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SP8K1FU6TB.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationBase Part NumberOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET TechnologyFET FeatureRadiation HardeningRoHS StatusLead FreeTerminationElement ConfigurationThreshold VoltageDual Supply VoltageNominal VgsREACH SVHCView Compare
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SP8K1FU6TB40 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)EAR99FET General Purpose Power2W*K1ENHANCEMENT MODE2W6 ns2 N-Channel (Dual)51m Ω @ 5A, 10V2.5V @ 1mA230pF @ 10V5.5nC @ 5V8ns30V5 ns22 ns5A20V5A30VMETAL-OXIDE SEMICONDUCTORLogic Level GateNoROHS3 CompliantLead Free------- -
17 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)EAR99FET General Purpose Power2W*K3ENHANCEMENT MODE2W-2 N-Channel (Dual)24m Ω @ 7A, 10V2.5V @ 1mA600pF @ 10V11.8nC @ 5V-30V--7A-7A-METAL-OXIDE SEMICONDUCTORLogic Level Gate-ROHS3 CompliantLead FreeSMD/SMTDual2.5V30V2.5 VNo SVHC
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJTape & Reel (TR)2006Obsolete1 (Unlimited)EAR99-2W--2W-2 N-Channel (Dual)25m Ω @ 6A, 10V2.5V @ 1mA1400pF @ 10V21.6nC @ 5V-45V--6A----Logic Level Gate-ROHS3 Compliant-SMD/SMTDual2.5V45V2.5 VNo SVHC
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-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)EAR99-2W*K5-2W6 ns2 N-Channel (Dual)83m Ω @ 3.5A, 10V2.5V @ 1mA140pF @ 10V3.5nC @ 5V6ns-4 ns17 ns3.5A20V-30V-Logic Level GateNoROHS3 CompliantLead FreeSMD/SMT--30V2.5 VNo SVHC
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