Rohm Semiconductor SP8K5FU6TB
- Part Number:
- SP8K5FU6TB
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2474145-SP8K5FU6TB
- Description:
- MOSFET 2N-CH 30V 3.5A 8SOIC
- Datasheet:
- SP8K5
Rohm Semiconductor SP8K5FU6TB technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor SP8K5FU6TB.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- ECCN CodeEAR99
- Max Power Dissipation2W
- Base Part Number*K5
- Power Dissipation2W
- Turn On Delay Time6 ns
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs83m Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds140pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs3.5nC @ 5V
- Rise Time6ns
- Fall Time (Typ)4 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)3.5A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage30V
- FET FeatureLogic Level Gate
- Nominal Vgs2.5 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SP8K5FU6TB Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SP8K5FU6TB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SP8K5FU6TB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SP8K5FU6TB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SP8K5FU6TB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SP8K5FU6TB More Descriptions
Trans MOSFET N-CH Si 30V 3.5A 8-Pin SOP T/R
MOSFET, DUAL, NN, 30V, 3.5A; Transistor type:Low Gate Drive; Voltage, Vds typ:30V; Current, Id cont:3.5A; Resistance, Rds on:0.15R; Voltage, Vgs Rds on measurement:4V; Voltage, Vgs th typ:2.5V; Case style:SOP-8; Current, Idm RoHS Compliant: Yes
MOSFET, DUAL, NN, 30V, 3.5A; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 3.5A; Drain Source Voltage Vds, N Channel: 30V; On Resistance Rds(on), N Channel: 0.059ohm; Pulse Current Idm: 14A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 4V; Voltage Vgs th Max: 2.5V; Voltage Vgs th Min: 1V
MOSFET, DUAL, NN, 30V, 3.5A; Transistor type:Low Gate Drive; Voltage, Vds typ:30V; Current, Id cont:3.5A; Resistance, Rds on:0.15R; Voltage, Vgs Rds on measurement:4V; Voltage, Vgs th typ:2.5V; Case style:SOP-8; Current, Idm RoHS Compliant: Yes
MOSFET, DUAL, NN, 30V, 3.5A; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 3.5A; Drain Source Voltage Vds, N Channel: 30V; On Resistance Rds(on), N Channel: 0.059ohm; Pulse Current Idm: 14A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 4V; Voltage Vgs th Max: 2.5V; Voltage Vgs th Min: 1V
The three parts on the right have similar specifications to SP8K5FU6TB.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationECCN CodeMax Power DissipationBase Part NumberPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageFET FeatureNominal VgsREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeSubcategoryElement ConfigurationOperating ModeDrain to Source Voltage (Vdss)Threshold VoltageDrain Current-Max (Abs) (ID)FET TechnologyView Compare
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SP8K5FU6TBSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)SMD/SMTEAR992W*K52W6 ns2 N-Channel (Dual)83m Ω @ 3.5A, 10V2.5V @ 1mA140pF @ 10V3.5nC @ 5V6ns4 ns17 ns3.5A20V30V30VLogic Level Gate2.5 VNo SVHCNoROHS3 CompliantLead Free---------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)SMD/SMTEAR992W*K32W-2 N-Channel (Dual)24m Ω @ 7A, 10V2.5V @ 1mA600pF @ 10V11.8nC @ 5V---7A--30VLogic Level Gate2.5 VNo SVHC-ROHS3 CompliantLead Free17 WeeksFET General Purpose PowerDualENHANCEMENT MODE30V2.5V7AMETAL-OXIDE SEMICONDUCTOR
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)SMD/SMTEAR992W*K42W10 ns2 N-Channel (Dual)17m Ω @ 9A, 10V2.5V @ 1mA1190pF @ 10V21nC @ 5V15ns22 ns55 ns9A20V30V30VLogic Level Gate2.5 VNo SVHCNoROHS3 CompliantLead Free--Dual--2.5V--
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)-EAR992W*K12W6 ns2 N-Channel (Dual)51m Ω @ 5A, 10V2.5V @ 1mA230pF @ 10V5.5nC @ 5V8ns5 ns22 ns5A20V30V-Logic Level Gate--NoROHS3 CompliantLead Free40 WeeksFET General Purpose Power-ENHANCEMENT MODE30V-5AMETAL-OXIDE SEMICONDUCTOR
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