Rohm Semiconductor SP8K31TB1
- Part Number:
- SP8K31TB1
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2474310-SP8K31TB1
- Description:
- MOSFET 2N-CH 60V 3.5A 8SOIC
- Datasheet:
- SP8K31
Rohm Semiconductor SP8K31TB1 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor SP8K31TB1.
- Factory Lead Time20 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package8-SOP
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation2W
- Base Part Number*K31
- Power - Max2W
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs120mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3.5A
- Gate Charge (Qg) (Max) @ Vgs5.2nC @ 5V
- Drain to Source Voltage (Vdss)60V
- Continuous Drain Current (ID)3.5A
- Input Capacitance250pF
- FET FeatureLogic Level Gate
- Drain to Source Resistance150MOhm
- Rds On Max120 mΩ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SP8K31TB1 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SP8K31TB1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SP8K31TB1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SP8K31TB1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SP8K31TB1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SP8K31TB1 More Descriptions
N-Channel N-Channel 2 W 60 V 150 mOhm SMT 4 V Drive MosFet - SOIC-8
MOSFET 2N-CH 60V 3.5A 8SOIC
MOSFET; 30V, 3.5A, N CHANNEL, DUAL, SOP8
OEMs, CMs ONLY (NO BROKERS)
MOSFET 2N-CH 60V 3.5A 8SOIC
MOSFET; 30V, 3.5A, N CHANNEL, DUAL, SOP8
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to SP8K31TB1.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Power DissipationBase Part NumberPower - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Input CapacitanceFET FeatureDrain to Source ResistanceRds On MaxRoHS StatusLead FreeNumber of PinsTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationRise TimeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)FET TechnologyTerminationElement ConfigurationPower DissipationTurn On Delay TimeFall Time (Typ)Turn-Off Delay TimeThreshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsREACH SVHCRadiation HardeningDrain Current-Max (Abs) (ID)View Compare
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SP8K31TB120 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SOP150°C TJTape & Reel (TR)2007Last Time Buy1 (Unlimited)2W*K312W2 N-Channel (Dual)120mOhm @ 3.5A, 10V2.5V @ 1mA250pF @ 10V3.5A5.2nC @ 5V60V3.5A250pFLogic Level Gate150MOhm120 mΩROHS3 CompliantLead Free--------------------------------------
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)-150°C TJTape & Reel (TR)2004Active1 (Unlimited)2W*K5-2 N-Channel (Dual)83m Ω @ 3.5A, 10V2.5V @ 1mA140pF @ 10V-3.5nC @ 5V-3.5A-Logic Level Gate--ROHS3 CompliantLead Free8SILICONe2yes8EAR99Tin/Copper (Sn/Cu)FET General Purpose Power30VGULL WING2603.5A108Not Qualified2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING6ns0.15Ohm14AMETAL-OXIDE SEMICONDUCTOR--------------
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)-150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)2W*K4-2 N-Channel (Dual)17m Ω @ 9A, 10V2.5V @ 1mA1190pF @ 10V-21nC @ 5V-9A-Logic Level Gate--ROHS3 CompliantLead Free8----EAR99-------------15ns---SMD/SMTDual2W10 ns22 ns55 ns2.5V20V30V30V2.5 VNo SVHCNo-
-
40 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)-150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)2W*K1-2 N-Channel (Dual)51m Ω @ 5A, 10V2.5V @ 1mA230pF @ 10V-5.5nC @ 5V30V5A-Logic Level Gate--ROHS3 CompliantLead Free8----EAR99-FET General Purpose Power---------ENHANCEMENT MODE-8ns--METAL-OXIDE SEMICONDUCTOR--2W6 ns5 ns22 ns-20V30V---No5A
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