Vishay Siliconix SI7738DP-T1-GE3

Name: SI7738DP-T1-GE3
Brand: Vishay Siliconix
SKU: 2849847-SI7738DP-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI7738DP-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2849847-SI7738DP-T1-GE3

Description:: MOSFET N-CH 150V 30A PPAK SO-8

ECAD Model:

Datasheet:: SI7738DP-T1-GE3

Specifications

Vishay Siliconix SI7738DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7738DP-T1-GE3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Number of Pins
8
Weight
506.605978mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
8
JESD-30 Code
R-XDSO-C5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
5.4W Ta 96W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
5.4W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
38m Ω @ 7.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2100pF @ 75V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
53nC @ 10V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
30A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
7.7A
Drain to Source Breakdown Voltage
150V
Avalanche Energy Rating (Eas)
45 mJ
Height
1.04mm
Length
4.9mm
Width
5.89mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

SI7738DP-T1-GE3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 45 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2100pF @ 75V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Drain current refers to the maximum continuous current a device can conduct, and it is 7.7A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

SI7738DP-T1-GE3 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 25 ns
a threshold voltage of 4V

SI7738DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7738DP-T1-GE3 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

SI7738DP-T1-GE3 More Descriptions

Trans MOSFET N-CH 150V 30A 8-Pin PowerPAK SO EP T/R / MOSFET N-CH 150V 30A PPAK SO-8
Power Field-Effect Transistor, 7.7A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 150V 30A 96W 38mohm @ 10V
N-CH WFET POWERPAK SO-8 150V 38MOHM @ 10V
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:30000mA; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.038ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:4V; Power Dissipation, Pd:5.4W ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to SI7738DP-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Resistance

Configuration

Lead Free

Pulsed Drain Current-Max (IDM)

FET Feature

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

View Compare
SI7738DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

PowerPAK® SO-8

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2005

e3

yes

Active

1 (Unlimited)

5

EAR99

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

C BEND

260

30

8

R-XDSO-C5

1

1

5.4W Ta 96W Tc

Single

ENHANCEMENT MODE

5.4W

DRAIN

15 ns

N-Channel

SWITCHING

38m Ω @ 7.7A, 10V

4V @ 250μA

2100pF @ 75V

30A Tc

53nC @ 10V

10ns

10V

±20V

10 ns

25 ns

30A

4V

20V

7.7A

150V

45 mJ

1.04mm

4.9mm

5.89mm

Unknown

No

ROHS3 Compliant

-

-

-

-

-

-

-

-
SI7758DP-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

PowerPAK® SO-8

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SkyFET®, TrenchFET®

2016

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

Matte Tin (Sn)

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

C BEND

260

30

8

R-XDSO-C5

1

1

6.25W Ta 104W Tc

-

ENHANCEMENT MODE

6.25W

DRAIN

53 ns

N-Channel

SWITCHING

2.9m Ω @ 20A, 10V

2.7V @ 250μA

7150pF @ 15V

60A Tc

160nC @ 10V

25ns

4.5V 10V

±20V

30 ns

56 ns

60A

-

20V

-

30V

-

1.04mm

4.9mm

5.89mm

-

No

ROHS3 Compliant

2.9mOhm

SINGLE WITH BUILT-IN DIODE

Lead Free

-

-

-

-

SI7738DP-T1-GE3 vs SI7758DP-T1-GE3
SI7703EDN-T1-E3

Vishay Siliconix

49 Weeks

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Active

1 (Unlimited)

6

EAR99

MATTE TIN

Other Transistors

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

S-XDSO-C6

1

-

1.3W Ta

-

ENHANCEMENT MODE

1.3W

DRAIN

4 ns

P-Channel

SWITCHING

48m Ω @ 6.3A, 4.5V

1V @ 800μA

-

4.3A Ta

18nC @ 4.5V

6ns

1.8V 4.5V

±12V

6 ns

23 ns

-6.3A

-

12V

4.3A

20V

-

-

-

-

-

No

ROHS3 Compliant

-

SINGLE WITH BUILT-IN DIODE AND RESISTOR

-

20A

Schottky Diode (Isolated)

-

-

SI7738DP-T1-GE3 vs SI7703EDN-T1-E3
SI7790DP-T1-GE3

Vishay Siliconix

15 Weeks

Surface Mount

Surface Mount

PowerPAK® SO-8

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2015

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

Matte Tin (Sn)

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

C BEND

260

30

8

R-XDSO-C5

1

1

5.2W Ta 69W Tc

-

ENHANCEMENT MODE

5.2W

DRAIN

42 ns

N-Channel

SWITCHING

4.5m Ω @ 15A, 10V

2.5V @ 250μA

4200pF @ 20V

50A Tc

95nC @ 10V

34ns

4.5V 10V

±25V

28 ns

45 ns

50A

2.5V

25V

-

-

-

1.04mm

4.9mm

5.89mm

Unknown

No

ROHS3 Compliant

4.5mOhm

SINGLE WITH BUILT-IN DIODE

Lead Free

70A

-

40V

40V

SI7738DP-T1-GE3 vs SI7790DP-T1-GE3

Certification

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SI7738DP-T1-GE3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI7738DP-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 150V 7.7A 8-Pin PowerPAK SO T/R RoHS: Compliant	2723	1 $2.515 10 $2.164 25 $2.157 100 $1.844 250 $1.796 500 $1.631 1000 $1.48
SI7738DP-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 150V 30A PPAK SO-8 RoHS: Compliant	9242	1 $3.17 10 $2.866 100 $2.3027 500 $1.79102 1000 $1.48399
SI7738DP-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 150V 30A PPAK SO-8 RoHS: Compliant	9242	1 $3.17 10 $2.866 100 $2.3027 500 $1.79102 1000 $1.48399
SI7738DP-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 150V 30A PPAK SO-8 RoHS: Compliant	9000	3000 $1.3414
SI7738DP-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 150V 7.7A 8-Pin PowerPAK SO T/R RoHS: Compliant	2723	5 $2.515 10 $2.164 25 $2.157 100 $1.844 250 $1.796 500 $1.631 1000 $1.48
SI7738DP-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 150V 7.7A 8-Pin PowerPAK SO T/R RoHS: Not Compliant	0	3000 $1.39 6000 $1.39 12000 $1.29 18000 $1.29 30000 $1.19
SI7738DP-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 150V 7.7A 8-Pin PowerPAK SO T/R RoHS: Compliant	0
SI7738DP-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 150V 7.7A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	3000 $2.19 6000 $1.59 12000 $1.29 18000 $1.09 30000 $1.09
SI7738DP-T1-GE3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 150V, 30A, SOIC, FULL REEL, Tra	0	1 $1.75 3000 $1.75
SI7738DP-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET, N CHANNEL, 150V, 30A, POWERPAK SO-8, Tran	0	1 $3.02 10 $2.93 100 $2.31 250 $2.2 500 $2.05 1000 $1.64
SI7738DP-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 150V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	4115	1 $2.95 10 $2.44 100 $2.01 250 $1.95 500 $1.77 1000 $1.76 3000 $1.75
SI7738DP-T1-GE3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 150V, 30A, SOIC, FULL RoHS: Compliant	0	3000 $1.54
SI7738DP-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 150V 7.7A 8-Pin PowerPAK SO T/R RoHS: Compliant	2723	1 $2.515 10 $2.164 25 $2.157 100 $1.844 250 $1.796
SI7738DP-T1-GE3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 150V, 30A, SOIC, FULL REEL RoHS: Compliant	0	3000 $5.16 6000 $3.96 12000 $3.18
SI7738DP-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 150V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	3000

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SI7738~~(5)~~
SI773~~(6)~~
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SI7~~(163)~~

Vishay Siliconix SI7738DP-T1-GE3

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