SI7716ADN-T1-GE3

Vishay Siliconix SI7716ADN-T1-GE3

Part Number:
SI7716ADN-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
3554107-SI7716ADN-T1-GE3
Description:
MOSFET N-CH 30V 16A 1212-8
ECAD Model:
Datasheet:
SI7716ADN ~

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Specifications
Vishay Siliconix SI7716ADN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7716ADN-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® 1212-8
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    13.5mOhm
  • Terminal Finish
    MATTE TIN
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • JESD-30 Code
    S-XDSO-C5
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    3.5W Ta 27.7W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    13.5m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    846pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    16A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 10V
  • Rise Time
    12ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    14 ns
  • Continuous Drain Current (ID)
    16A
  • Threshold Voltage
    2.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Pulsed Drain Current-Max (IDM)
    32A
  • DS Breakdown Voltage-Min
    30V
  • Height
    1.04mm
  • Length
    3.05mm
  • Width
    3.05mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7716ADN-T1-GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 846pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 14 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 32A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SI7716ADN-T1-GE3 Features
a continuous drain current (ID) of 16A
the turn-off delay time is 14 ns
based on its rated peak drain current 32A.
a threshold voltage of 2.5V
a 30V drain to source voltage (Vdss)


SI7716ADN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7716ADN-T1-GE3 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI7716ADN-T1-GE3 More Descriptions
Single N-Channel 30 V 0.0135 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8
MOSFET,N CH,30V,16A,POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:3.5W; Voltage Vgs Max:20V
Mosfet, N Channel, 30V, 16A, Powerpak 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: No |Vishay SI7716ADN-T1-GE3.
Product Comparison
The three parts on the right have similar specifications to SI7716ADN-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Published
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    FET Feature
    Weight
    Element Configuration
    Avalanche Energy Rating (Eas)
    View Compare
  • SI7716ADN-T1-GE3
    SI7716ADN-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    13.5mOhm
    MATTE TIN
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    S-XDSO-C5
    1
    SINGLE WITH BUILT-IN DIODE
    1
    3.5W Ta 27.7W Tc
    ENHANCEMENT MODE
    3.5W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    13.5m Ω @ 10A, 10V
    2.5V @ 250μA
    846pF @ 15V
    16A Tc
    23nC @ 10V
    12ns
    30V
    4.5V 10V
    ±20V
    10 ns
    14 ns
    16A
    2.5V
    20V
    32A
    30V
    1.04mm
    3.05mm
    3.05mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7703EDN-T1-GE3
    -
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    -
    MATTE TIN
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    S-XDSO-C6
    1
    SINGLE WITH BUILT-IN DIODE
    -
    1.3W Ta
    ENHANCEMENT MODE
    1.3W
    DRAIN
    4 ns
    P-Channel
    SWITCHING
    48m Ω @ 6.3A, 4.5V
    1V @ 800μA
    -
    4.3A Ta
    18nC @ 4.5V
    6ns
    -
    1.8V 4.5V
    ±12V
    6 ns
    23 ns
    -6.3A
    -1V
    12V
    20A
    -
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    -
    2013
    4.3A
    20V
    Schottky Diode (Isolated)
    -
    -
    -
  • SI7738DP-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-XDSO-C5
    1
    -
    1
    5.4W Ta 96W Tc
    ENHANCEMENT MODE
    5.4W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    38m Ω @ 7.7A, 10V
    4V @ 250μA
    2100pF @ 75V
    30A Tc
    53nC @ 10V
    10ns
    -
    10V
    ±20V
    10 ns
    25 ns
    7.7A
    -
    20V
    30A
    -
    1.04mm
    4.9mm
    5.89mm
    -
    No
    ROHS3 Compliant
    -
    2013
    30A
    150V
    -
    506.605978mg
    Single
    45 mJ
  • SI7738DP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    R-XDSO-C5
    1
    -
    1
    5.4W Ta 96W Tc
    ENHANCEMENT MODE
    5.4W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    38m Ω @ 7.7A, 10V
    4V @ 250μA
    2100pF @ 75V
    30A Tc
    53nC @ 10V
    10ns
    -
    10V
    ±20V
    10 ns
    25 ns
    30A
    4V
    20V
    -
    -
    1.04mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    -
    2005
    7.7A
    150V
    -
    506.605978mg
    Single
    45 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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