Vishay Siliconix SI7716ADN-T1-GE3
- Part Number:
- SI7716ADN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3554107-SI7716ADN-T1-GE3
- Description:
- MOSFET N-CH 30V 16A 1212-8
- Datasheet:
- SI7716ADN ~
Vishay Siliconix SI7716ADN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7716ADN-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® 1212-8
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance13.5mOhm
- Terminal FinishMATTE TIN
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- JESD-30 CodeS-XDSO-C5
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max3.5W Ta 27.7W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.5W
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs13.5m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds846pF @ 15V
- Current - Continuous Drain (Id) @ 25°C16A Tc
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Rise Time12ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)16A
- Threshold Voltage2.5V
- Gate to Source Voltage (Vgs)20V
- Pulsed Drain Current-Max (IDM)32A
- DS Breakdown Voltage-Min30V
- Height1.04mm
- Length3.05mm
- Width3.05mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7716ADN-T1-GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 846pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 14 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 32A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI7716ADN-T1-GE3 Features
a continuous drain current (ID) of 16A
the turn-off delay time is 14 ns
based on its rated peak drain current 32A.
a threshold voltage of 2.5V
a 30V drain to source voltage (Vdss)
SI7716ADN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7716ADN-T1-GE3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 846pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 14 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 32A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI7716ADN-T1-GE3 Features
a continuous drain current (ID) of 16A
the turn-off delay time is 14 ns
based on its rated peak drain current 32A.
a threshold voltage of 2.5V
a 30V drain to source voltage (Vdss)
SI7716ADN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7716ADN-T1-GE3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI7716ADN-T1-GE3 More Descriptions
Single N-Channel 30 V 0.0135 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8
MOSFET,N CH,30V,16A,POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:3.5W; Voltage Vgs Max:20V
Mosfet, N Channel, 30V, 16A, Powerpak 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: No |Vishay SI7716ADN-T1-GE3.
MOSFET,N CH,30V,16A,POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:3.5W; Voltage Vgs Max:20V
Mosfet, N Channel, 30V, 16A, Powerpak 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: No |Vishay SI7716ADN-T1-GE3.
The three parts on the right have similar specifications to SI7716ADN-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePublishedDrain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET FeatureWeightElement ConfigurationAvalanche Energy Rating (Eas)View Compare
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SI7716ADN-T1-GE314 WeeksSurface MountSurface MountPowerPAK® 1212-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®e3yesActive1 (Unlimited)5EAR9913.5mOhmMATTE TINFET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260308S-XDSO-C51SINGLE WITH BUILT-IN DIODE13.5W Ta 27.7W TcENHANCEMENT MODE3.5WDRAIN15 nsN-ChannelSWITCHING13.5m Ω @ 10A, 10V2.5V @ 250μA846pF @ 15V16A Tc23nC @ 10V12ns30V4.5V 10V±20V10 ns14 ns16A2.5V20V32A30V1.04mm3.05mm3.05mmUnknownNoROHS3 CompliantLead Free--------
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-Surface MountSurface MountPowerPAK® 1212-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®e3yesObsolete1 (Unlimited)6EAR99-MATTE TINOther TransistorsMOSFET (Metal Oxide)DUALC BEND260408S-XDSO-C61SINGLE WITH BUILT-IN DIODE-1.3W TaENHANCEMENT MODE1.3WDRAIN4 nsP-ChannelSWITCHING48m Ω @ 6.3A, 4.5V1V @ 800μA-4.3A Ta18nC @ 4.5V6ns-1.8V 4.5V±12V6 ns23 ns-6.3A-1V12V20A----No SVHCNoROHS3 Compliant-20134.3A20VSchottky Diode (Isolated)---
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14 WeeksSurface MountSurface MountPowerPAK® SO-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®e3yesActive1 (Unlimited)5EAR99-Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260408R-XDSO-C51-15.4W Ta 96W TcENHANCEMENT MODE5.4WDRAIN15 nsN-ChannelSWITCHING38m Ω @ 7.7A, 10V4V @ 250μA2100pF @ 75V30A Tc53nC @ 10V10ns-10V±20V10 ns25 ns7.7A-20V30A-1.04mm4.9mm5.89mm-NoROHS3 Compliant-201330A150V-506.605978mgSingle45 mJ
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14 WeeksSurface MountSurface MountPowerPAK® SO-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®e3yesActive1 (Unlimited)5EAR99-Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260308R-XDSO-C51-15.4W Ta 96W TcENHANCEMENT MODE5.4WDRAIN15 nsN-ChannelSWITCHING38m Ω @ 7.7A, 10V4V @ 250μA2100pF @ 75V30A Tc53nC @ 10V10ns-10V±20V10 ns25 ns30A4V20V--1.04mm4.9mm5.89mmUnknownNoROHS3 Compliant-20057.7A150V-506.605978mgSingle45 mJ
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