Vishay Siliconix SI7625DN-T1-GE3

SI7625DN-T1-GE3 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 20 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4427pF @ 15V.This device conducts a continuous drain current (ID) of 17.3A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 35A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

SI7625DN-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 17.3A
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)


SI7625DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7625DN-T1-GE3 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching