Vishay Siliconix SI7456DP-T1-GE3

Name: SI7456DP-T1-GE3
Brand: Vishay Siliconix
SKU: 2484222-SI7456DP-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI7456DP-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2484222-SI7456DP-T1-GE3

Description:: MOSFET N-CH 100V 5.7A PPAK SO-8

ECAD Model:

Datasheet:: SI7456DP-T1-GE3

Specifications

Vishay Siliconix SI7456DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7456DP-T1-GE3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Number of Pins
8
Weight
506.605978mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
25MOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Pin Count
8
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.9W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.9W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
25m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Current - Continuous Drain (Id) @ 25°C
5.7A Ta
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
46 ns
Continuous Drain Current (ID)
5.7A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
40A
Avalanche Energy Rating (Eas)
45 mJ
Nominal Vgs
4 V
Turn On Time-Max (ton)
60ns
Height
1.04mm
Length
4.9mm
Width
5.89mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI7456DP-T1-GE3 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 45 mJ.This device has a continuous drain current (ID) of [5.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 46 ns.A maximum pulsed drain current of 40A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2V.Its overall power consumption can be reduced by using drive voltage (6V 10V).

SI7456DP-T1-GE3 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 5.7A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 40A.
a threshold voltage of 2V

SI7456DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7456DP-T1-GE3 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

SI7456DP-T1-GE3 More Descriptions

Trans MOSFET N-CH 100V 5.7A Automotive 8-Pin PowerPAK SO T/R
N-Channel 100 V 5.7 A 1.9 W Surface Mount Mosfet - PowerPAK® SO-8
MOSFET N-CH 100V 5.7A PPAK SO-8
Power Field-Effect Transistor, 5.7A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
LDO Voltage Regulators 200mA Fixed(1.3V)
N-CH POWERPAK SO-8 100V 23.5MOHM @
MOSFET, N CH, 100V, 5.7A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):21mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.9W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.7A; Power Dissipation Pd:1.9W; Voltage Vgs Max:20V

Product Comparison

The three parts on the right have similar specifications to SI7456DP-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Nominal Vgs

Turn On Time-Max (ton)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Input Capacitance (Ciss) (Max) @ Vds

Drain-source On Resistance-Max

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

View Compare
SI7456DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

PowerPAK® SO-8

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

e3

yes

Active

1 (Unlimited)

5

EAR99

25MOhm

Matte Tin (Sn)

AVALANCHE RATED

MOSFET (Metal Oxide)

DUAL

FLAT

8

R-PDSO-F5

1

1

1.9W Ta

Single

ENHANCEMENT MODE

1.9W

DRAIN

14 ns

N-Channel

SWITCHING

25m Ω @ 9.3A, 10V

4V @ 250μA

5.7A Ta

44nC @ 10V

10ns

6V 10V

±20V

10 ns

46 ns

5.7A

2V

20V

100V

40A

45 mJ

4 V

60ns

1.04mm

4.9mm

5.89mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
SI7411DN-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2015

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

19MOhm

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

DUAL

C BEND

8

S-XDSO-C5

1

-

1.5W Ta

Single

ENHANCEMENT MODE

1.5W

DRAIN

23 ns

P-Channel

SWITCHING

19m Ω @ 11.4A, 4.5V

1V @ 300μA

7.5A Ta

41nC @ 4.5V

45ns

1.8V 4.5V

±8V

45 ns

135 ns

7.5A

-

8V

20V

30A

-

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

Other Transistors

260

40

-

-

-

-

SI7456DP-T1-GE3 vs SI7411DN-T1-E3
SI7447ADP-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

-

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

DUAL

C BEND

8

R-XDSO-C5

1

-

5.4W Ta 83.3W Tc

Single

ENHANCEMENT MODE

5.4W

DRAIN

20 ns

P-Channel

SWITCHING

6.5m Ω @ 24A, 10V

3V @ 250μA

35A Tc

150nC @ 10V

25ns

10V

±25V

98 ns

82 ns

21.5A

-

25V

30V

60A

-

-

-

-

-

-

-

No

ROHS3 Compliant

-

Other Transistors

260

40

4650pF @ 15V

0.0065Ohm

-

-

SI7456DP-T1-GE3 vs SI7447ADP-T1-E3
SI7409ADN-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2009

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

19mOhm

MATTE TIN

-

MOSFET (Metal Oxide)

DUAL

C BEND

8

S-XDSO-C5

1

-

1.5W Ta

Single

ENHANCEMENT MODE

1.5W

DRAIN

30 ns

P-Channel

SWITCHING

19m Ω @ 11A, 4.5V

1.5V @ 250μA

7A Ta

40nC @ 4.5V

50ns

2.5V 4.5V

±12V

50 ns

115 ns

-11A

-

12V

-30V

40A

-

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

Other Transistors

260

40

-

-

30V

7A

SI7456DP-T1-GE3 vs SI7409ADN-T1-E3

Certification

Related parts for SI7456DP-T1-GE3

SI7405BDN-T1-E3

Vishay Siliconix

MOSFET P-CH 12V 16A PPAK 1212-8
SI7491DP-T1-GE3

Vishay Siliconix

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Part Number	Manufacturers	Description	Stock	Price
SI7456DP-T1-GE3 DISTI #V72:2272_09216359	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.7A Automotive 8-Pin Power RoHS: Compliant	359	1 $1.945 10 $1.5932 25 $1.4339 100 $1.283 250 $1.2631
SI7456DP-T1-GE3 DISTI #V36:1790_09216359	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.7A Automotive 8-Pin Power RoHS: Compliant	0	3000 $1.248
SI7456DP-T1-GE3 DISTI #SI7456DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 5.7A PPAK SO-8 RoHS: Compliant	4516	1 $1.78 10 $1.602 100 $1.2875 500 $1.0578 1000 $0.87646
SI7456DP-T1-GE3 DISTI #SI7456DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 5.7A PPAK SO-8 RoHS: Compliant	4516	1 $1.78 10 $1.602 100 $1.2875 500 $1.0578 1000 $0.87646
SI7456DP-T1-GE3 DISTI #SI7456DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 5.7A PPAK SO-8 RoHS: Compliant	3000	3000 $0.79224 6000 $0.7629
SI7456DP-T1-GE3 DISTI #32825590	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.7A Automotive 8-Pin Power RoHS: Compliant	3000	3000 $0.9665
SI7456DP-T1-GE3 DISTI #30603870	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.7A Automotive 8-Pin Power RoHS: Compliant	440	13 $1.9875
SI7456DP-T1-GE3 DISTI #32030869	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.7A Automotive 8-Pin Power RoHS: Compliant	361	8 $1.945
SI7456DP-T1-GE3 DISTI #SI7456DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.7A 8-Pin PowerPAK SO T/R RoHS: Not Compliant	0	3000 $1.33188 6000 $1.29237 12000 $1.23984 18000 $1.20553 30000 $1.17308
SI7456DP-T1-GE3 DISTI #97K9795	Vishay Intertechnologies	MOSFET, N, SO-8, Transistor Polarity:N Channel,	14440	1 $2.15 10 $1.81 25 $1.69 50 $1.57 100 $1.45 250 $1.37 500 $1.29
SI7456DP-T1-GE3 DISTI #15R5201	Vishay Intertechnologies	N CHANNEL MOSFET, Transistor Polarity:N Channel,	0	1 $1.54 1000 $1.45 2000 $1.38 4000 $1.24 6000 $1.19 10000 $1.15
SI7456DP-T1-GE3. DISTI #28AC2167	Vishay Intertechnologies	N CHANNEL MOSFET, Transistor Polarity:N Channel,	0	1 $1.54 1000 $1.45 2000 $1.38 4000 $1.24 6000 $1.19 10000 $1.15
SI7456DP-T1-GE3 DISTI #781-SI7456DP-T1-GE3	Vishay Intertechnologies	MOSFET 100V 9.3A 5.2W 25mohm @ 10V RoHS: Compliant	7366	1 $2.06 10 $1.71 100 $1.33 500 $1.16 1000 $0.965 3000 $0.898 6000 $0.865
SI7456DP-T1-GE3 DISTI #9550704	Vishay Intertechnologies	MOSFET, N, SO-8	13605	1 $1.73 10 $1.39 100 $1.06 250 $0.963 500 $0.864
SI7456DP-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI7456DP-T1-GE3	54000
SI7456DP-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 100V 9.3A 5.2W 25mohm @ 10V RoHS: Compliant	0
SI7456DP-T1-GE3 DISTI #C1S806001164639	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.7A Automotive 8-Pin Power RoHS: Compliant	440	1 $1.59 10 $1.44 50 $1.35 100 $1.15 250 $1.08
SI7456DP-T1-GE3 DISTI #9550704	Vishay Intertechnologies	MOSFET, N, SO-8 RoHS: Compliant	13470	1 $2.68 10 $2.42 100 $1.95 500 $1.6
SI7456DP-T1-GE3 DISTI #9550704RL	Vishay Intertechnologies	MOSFET, N, SO-8 RoHS: Compliant	0	1 $2.68 10 $2.42 100 $1.95 500 $1.6

SI7456D~~(6)~~
SI7456~~(7)~~
SI745~~(35)~~
SI74~~(159)~~
SI7~~(163)~~

Vishay Siliconix SI7456DP-T1-GE3

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