Vishay Siliconix SI7411DN-T1-E3

SI7411DN-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 135 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 30A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 23 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.

SI7411DN-T1-E3 Features
a continuous drain current (ID) of 7.5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 135 ns
based on its rated peak drain current 30A.


SI7411DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7411DN-T1-E3 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools