Vishay Siliconix SI7431DP-T1-GE3
- Part Number:
- SI7431DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848500-SI7431DP-T1-GE3
- Description:
- MOSFET P-CH 200V 2.2A PPAK SO-8
- ECAD Model:
-
- Datasheet:
- SI7431DP-T1-GE3
Vishay Siliconix SI7431DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7431DP-T1-GE3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Additional FeatureULTRA-LOW RESISTANCE
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- JESD-30 CodeR-XDSO-C5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.9W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.9W
- Case ConnectionDRAIN
- Turn On Delay Time23 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs174m Ω @ 3.8A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Current - Continuous Drain (Id) @ 25°C2.2A Ta
- Gate Charge (Qg) (Max) @ Vgs135nC @ 10V
- Rise Time49ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)49 ns
- Turn-Off Delay Time110 ns
- Continuous Drain Current (ID)-2.2A
- Threshold Voltage-4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-200V
- Pulsed Drain Current-Max (IDM)30A
- Avalanche Energy Rating (Eas)45 mJ
- Nominal Vgs-4 V
- Height1.04mm
- Length4.9mm
- Width5.89mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7431DP-T1-GE3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 45 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has -2.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -200V, and this device has a drainage-to-source breakdown voltage of -200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Peak drain current is 30A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 23 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is -4V, which means that it will not activate any of its functions when its threshold voltage reaches -4V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
SI7431DP-T1-GE3 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of -2.2A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 30A.
a threshold voltage of -4V
a 200V drain to source voltage (Vdss)
SI7431DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7431DP-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 45 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has -2.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -200V, and this device has a drainage-to-source breakdown voltage of -200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Peak drain current is 30A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 23 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is -4V, which means that it will not activate any of its functions when its threshold voltage reaches -4V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
SI7431DP-T1-GE3 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of -2.2A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 30A.
a threshold voltage of -4V
a 200V drain to source voltage (Vdss)
SI7431DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7431DP-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SI7431DP-T1-GE3 More Descriptions
SI7431DP-T1-GE3 Vishay MOSFETs Transistor P-CH 200V 2.2A 8-Pin PowerPAK SO T/R - Arrow.com
Trans MOSFET P-CH 200V 2.2A 8-Pin PowerPAK SO T/R
Power Field-Effect Transistor, 2.2A I(D), 200V, 0.174ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P-CH 200V 3,8A 174mOhm PwrPSO-8 RoHSconf
CoC and 2-years warranty / RFQ for pricing
Product Description Demo for Development.
IC REG LIN 4.75V 200MA SOT23-5
P-CH POWERPAK SO-8 200V 174MOHM @ 10V
P-Ch 200V 3,8A 5,4W 0,171R PowerPakSO8
TRANS_MOS P PUIS SI7431DP 200V/3.6A-TRAN
MOSFET,P CH,DIODE,200V,3.8A,SO8 PPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:5.4W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-3.8A; Power Dissipation Pd:5.4W; Voltage Vgs Max:-20V
Trans MOSFET P-CH 200V 2.2A 8-Pin PowerPAK SO T/R
Power Field-Effect Transistor, 2.2A I(D), 200V, 0.174ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P-CH 200V 3,8A 174mOhm PwrPSO-8 RoHSconf
CoC and 2-years warranty / RFQ for pricing
Product Description Demo for Development.
IC REG LIN 4.75V 200MA SOT23-5
P-CH POWERPAK SO-8 200V 174MOHM @ 10V
P-Ch 200V 3,8A 5,4W 0,171R PowerPakSO8
TRANS_MOS P PUIS SI7431DP 200V/3.6A-TRAN
MOSFET,P CH,DIODE,200V,3.8A,SO8 PPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:5.4W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-3.8A; Power Dissipation Pd:5.4W; Voltage Vgs Max:-20V
The three parts on the right have similar specifications to SI7431DP-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeResistanceTerminal FinishDrain Current-Max (Abs) (ID)Reach Compliance CodeQualification StatusDrain-source On Resistance-MaxView Compare
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SI7431DP-T1-GE314 WeeksTinSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2011e3yesActive1 (Unlimited)5EAR99ULTRA-LOW RESISTANCEOther TransistorsMOSFET (Metal Oxide)DUALC BEND260408R-XDSO-C5111.9W TaSingleENHANCEMENT MODE1.9WDRAIN23 nsP-ChannelSWITCHING174m Ω @ 3.8A, 10V4V @ 250μA2.2A Ta135nC @ 10V49ns200V6V 10V±20V49 ns110 ns-2.2A-4V20V-200V30A45 mJ-4 V1.04mm4.9mm5.89mmNo SVHCNoROHS3 CompliantLead Free------- -
--Surface MountSurface MountPowerPAK® SO-88-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2014e3yesObsolete1 (Unlimited)5EAR99-Other TransistorsMOSFET (Metal Oxide)DUALC BEND26030-R-XDSO-C51-1.8W TaSingleENHANCEMENT MODE5WDRAIN150 nsP-ChannelSWITCHING8.5m Ω @ 18A, 10V3V @ 250μA11A Ta85nC @ 5V190ns-4.5V 10V±20V90 ns120 ns18A-3V20V30V50A--3 V---UnknownNoROHS3 CompliantLead Free8.5mOhmPURE MATTE TIN11A---
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--Surface MountSurface MountPowerPAK® SO-8--SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesObsolete1 (Unlimited)5EAR99-FET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260408R-XDSO-C51-1.9W TaSingleENHANCEMENT MODE-DRAIN18 nsN-ChannelSWITCHING6.5m Ω @ 21A, 10V3V @ 250μA12A Ta35nC @ 4.5V--4.5V 10V±20V41 ns75 ns12A-20V30V60A-------ROHS3 Compliant--MATTE TIN-unknownNot Qualified0.0065Ohm
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--Surface MountSurface MountPowerPAK® 1212-88-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesObsolete1 (Unlimited)5EAR99-Other TransistorsMOSFET (Metal Oxide)DUALC BEND260408S-XDSO-C51-1.5W TaSingleENHANCEMENT MODE1.5WDRAIN30 nsP-ChannelSWITCHING19m Ω @ 11A, 4.5V1.5V @ 250μA7A Ta40nC @ 4.5V50ns30V2.5V 4.5V±12V50 ns115 ns-11A-12V-30V40A------NoROHS3 CompliantLead Free19mOhmMATTE TIN7A---
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