Vishay Siliconix SI6463BDQ-T1-E3

SI6463BDQ-T1-E3 Overview
This device conducts a continuous drain current (ID) of -7.4A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 6.2A.When the device is turned off, a turn-off delay time of 190 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.This transistor requires a drain-source voltage (Vdss) of 20V.

SI6463BDQ-T1-E3 Features
a continuous drain current (ID) of -7.4A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 190 ns
a 20V drain to source voltage (Vdss)


SI6463BDQ-T1-E3 Applications
There are a lot of Vishay Siliconix
SI6463BDQ-T1-E3 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching