Vishay Siliconix SI6435ADQ-T1-E3
- Part Number:
- SI6435ADQ-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3586672-SI6435ADQ-T1-E3
- Description:
- MOSFET P-CH 30V 4.7A 8-TSSOP
- Datasheet:
- SI6435ADQ-T1-E3
Vishay Siliconix SI6435ADQ-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI6435ADQ-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Number of Pins8
- PackagingCut Tape (CT)
- SeriesTrenchFET®
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance30mOhm
- Terminal FinishMatte Tin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation1.5W
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.05W
- Turn On Delay Time12 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs30m Ω @ 5.5A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA (Min)
- Current - Continuous Drain (Id) @ 25°C4.7A Ta
- Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
- Rise Time10ns
- Drain to Source Voltage (Vdss)30V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time42 ns
- Continuous Drain Current (ID)4.7A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Dual Supply Voltage-30V
- Nominal Vgs-1 V
- Height1.0414mm
- Length4.4958mm
- Width3.0988mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI6435ADQ-T1-E3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4.7A.When VGS=-30V, and ID flows to VDS at -30VVDS, the drain-source breakdown voltage is -30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 42 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.
SI6435ADQ-T1-E3 Features
a continuous drain current (ID) of 4.7A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 42 ns
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
SI6435ADQ-T1-E3 Applications
There are a lot of Vishay Siliconix
SI6435ADQ-T1-E3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4.7A.When VGS=-30V, and ID flows to VDS at -30VVDS, the drain-source breakdown voltage is -30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 42 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.
SI6435ADQ-T1-E3 Features
a continuous drain current (ID) of 4.7A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 42 ns
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
SI6435ADQ-T1-E3 Applications
There are a lot of Vishay Siliconix
SI6435ADQ-T1-E3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SI6435ADQ-T1-E3 More Descriptions
Single P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - TSSOP-8
Trans MOSFET P-CH Si 30V 4.7A 8-Pin TSSOP T/R
MOSFET, P, 8-TSSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.5W; Transistor Case Style:TSSOP; No. of Pins:8; Current Id Max:4.7A; Package / Case:TSSOP; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V
Trans MOSFET P-CH Si 30V 4.7A 8-Pin TSSOP T/R
MOSFET, P, 8-TSSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.5W; Transistor Case Style:TSSOP; No. of Pins:8; Current Id Max:4.7A; Package / Case:TSSOP; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V
The three parts on the right have similar specifications to SI6435ADQ-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsPackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishMax Operating TemperatureMin Operating TemperatureMax Power DissipationTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialOperating TemperatureSubcategoryPower Dissipation-MaxDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Pulsed Drain Current-Max (IDM)Supplier Device PackageWeightNumber of ChannelsDrain to Source ResistanceRds On MaxDrain Current-Max (Abs) (ID)View Compare
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SI6435ADQ-T1-E3Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8Cut Tape (CT)TrenchFET®2016e3yesObsolete1 (Unlimited)8SMD/SMTEAR9930mOhmMatte Tin (Sn)150°C-55°C1.5WMOSFET (Metal Oxide)DUALGULL WING2604081SingleENHANCEMENT MODE1.05W12 nsP-Channel30m Ω @ 5.5A, 10V1V @ 250μA (Min)4.7A Ta20nC @ 5V10ns30V10 ns42 ns4.7A-1V20V-30V-30V-1 V1.0414mm4.4958mm3.0988mmNo SVHCNoROHS3 CompliantLead Free--------------
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Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8Tape & Reel (TR)TrenchFET®2016e3-Obsolete1 (Unlimited)8--14mOhmMATTE TIN---MOSFET (Metal Oxide)DUALGULL WING26010-1SingleENHANCEMENT MODE1.5W15 nsN-Channel14m Ω @ 7.8A, 10V1V @ 250μA (Min)-33nC @ 5V10ns-10 ns70 ns7.8A-20V30V--1.0414mm4.4958mm3.0988mm-NoROHS3 CompliantLead FreeSILICON-55°C~150°C TJFET General Purpose Power1.5W Ta4.5V 10V±20V30A------
-
Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8Tape & Reel (TR)TrenchFET®2016--Obsolete1 (Unlimited)-----150°C-55°C-MOSFET (Metal Oxide)------Single--42 nsP-Channel12.5mOhm @ 9.5A, 4.5V450mV @ 250μA (Min)6.2A Ta70nC @ 5V33ns20V95 ns220 ns6.2A-8V-20V--1mm3mm4.4mm--ROHS3 Compliant---55°C~150°C TJ-1.08W Ta1.8V 4.5V±8V-8-TSSOP157.991892mg112.5mOhm12.5 mΩ-
-
Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8Tape & Reel (TR)-2016e3yesObsolete1 (Unlimited)8-EAR9940MOhmMATTE TIN---MOSFET (Metal Oxide)DUALGULL WING2604081SingleENHANCEMENT MODE1.05W45 nsP-Channel40m Ω @ 4.8A, 4.5V1.5V @ 250μA4A Ta15nC @ 4.5V60ns-60 ns70 ns-4.8A-1.5V8V12V--1.5 V---UnknownNoROHS3 CompliantLead FreeSILICON-55°C~150°C TJOther Transistors1.05W Ta2.5V 4.5V±8V------4A
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