SI5468DC-T1-GE3

Vishay Siliconix SI5468DC-T1-GE3

Part Number:
SI5468DC-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2848795-SI5468DC-T1-GE3
Description:
MOSFET N-CH 30V 6A 1206-8
ECAD Model:
Datasheet:
SI5468DC-T1-GE3

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Specifications
Vishay Siliconix SI5468DC-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI5468DC-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SMD, Flat Lead
  • Number of Pins
    8
  • Weight
    84.99187mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2016
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    28MOhm
  • Terminal Finish
    PURE MATTE TIN
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    2.3W Ta 5.7W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.3W
  • Turn On Delay Time
    5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    28m Ω @ 6.8A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    435pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 10V
  • Rise Time
    10ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    6A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    6A
  • DS Breakdown Voltage-Min
    30V
  • Height
    1.1mm
  • Length
    3.05mm
  • Width
    1.65mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI5468DC-T1-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 435pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SI5468DC-T1-GE3 Features
a continuous drain current (ID) of 6A
the turn-off delay time is 15 ns
a 30V drain to source voltage (Vdss)


SI5468DC-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI5468DC-T1-GE3 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SI5468DC-T1-GE3 More Descriptions
Single N-Channel 30 V 28 mOhm SMT TrenchFET Power Mosfet - 1206-8 ChipFET
SI5468DC-T1-GE3 N-channel MOSFET Transistor, 6 A, 30 V, 8-Pin 1206 ChipFET | Siliconix / Vishay SI5468DC-T1-GE3
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(On):0.023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: No
Product Comparison
The three parts on the right have similar specifications to SI5468DC-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Element Configuration
    Drain to Source Breakdown Voltage
    Drain to Source Resistance
    Rds On Max
    Contact Plating
    Voltage
    Current
    Threshold Voltage
    Input Capacitance
    REACH SVHC
    View Compare
  • SI5468DC-T1-GE3
    SI5468DC-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    8
    84.99187mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    28MOhm
    PURE MATTE TIN
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    1
    SINGLE WITH BUILT-IN DIODE
    1
    2.3W Ta 5.7W Tc
    ENHANCEMENT MODE
    2.3W
    5 ns
    N-Channel
    SWITCHING
    28m Ω @ 6.8A, 10V
    2.5V @ 250μA
    435pF @ 15V
    6A Tc
    12nC @ 10V
    10ns
    30V
    4.5V 10V
    ±20V
    10 ns
    15 ns
    6A
    20V
    6A
    30V
    1.1mm
    3.05mm
    1.65mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI5449DC-T1-GE3
    -
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    85mOhm
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    1.3W Ta
    -
    1.3W
    -
    P-Channel
    -
    85mOhm @ 3.1A, 4.5V
    600mV @ 250μA (Min)
    -
    3.1A Ta
    11nC @ 4.5V
    -
    30V
    2.5V 4.5V
    ±12V
    -
    35 ns
    3.1A
    12V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    1206-8 ChipFET™
    150°C
    -55°C
    Single
    30V
    85mOhm
    85 mΩ
    -
    -
    -
    -
    -
    -
  • SI5475DDC-T1-GE3
    -
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    8
    84.99187mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2014
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    32mOhm
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    -
    1
    2.3W Ta 5.7W Tc
    -
    5.7W
    20 ns
    P-Channel
    -
    32mOhm @ 5.4A, 4.5V
    1V @ 250μA
    1600pF @ 6V
    6A Tc
    50nC @ 8V
    40ns
    12V
    1.8V 4.5V
    ±8V
    40 ns
    45 ns
    -6A
    8V
    -
    -
    1.1mm
    3.05mm
    1.65mm
    No
    ROHS3 Compliant
    Lead Free
    1206-8 ChipFET™
    150°C
    -55°C
    Single
    -12V
    32mOhm
    32 mΩ
    Tin
    12V
    6A
    -400mV
    1.6nF
    Unknown
  • SI5449DC-T1-E3
    -
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    8
    84.99187mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    1
    1.3W Ta
    -
    1.3W
    13 ns
    P-Channel
    -
    85mOhm @ 3.1A, 4.5V
    600mV @ 250μA (Min)
    -
    3.1A Ta
    11nC @ 4.5V
    14ns
    30V
    2.5V 4.5V
    ±12V
    14 ns
    35 ns
    -4.3A
    12V
    -
    -
    1.1mm
    3.05mm
    1.65mm
    -
    ROHS3 Compliant
    -
    1206-8 ChipFET™
    150°C
    -55°C
    Single
    -
    85mOhm
    85 mΩ
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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