Vishay Siliconix SI5468DC-T1-GE3
- Part Number:
- SI5468DC-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848795-SI5468DC-T1-GE3
- Description:
- MOSFET N-CH 30V 6A 1206-8
- Datasheet:
- SI5468DC-T1-GE3
Vishay Siliconix SI5468DC-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI5468DC-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SMD, Flat Lead
- Number of Pins8
- Weight84.99187mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance28MOhm
- Terminal FinishPURE MATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max2.3W Ta 5.7W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.3W
- Turn On Delay Time5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs28m Ω @ 6.8A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds435pF @ 15V
- Current - Continuous Drain (Id) @ 25°C6A Tc
- Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
- Rise Time10ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)6A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)6A
- DS Breakdown Voltage-Min30V
- Height1.1mm
- Length3.05mm
- Width1.65mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI5468DC-T1-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 435pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SI5468DC-T1-GE3 Features
a continuous drain current (ID) of 6A
the turn-off delay time is 15 ns
a 30V drain to source voltage (Vdss)
SI5468DC-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI5468DC-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 435pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SI5468DC-T1-GE3 Features
a continuous drain current (ID) of 6A
the turn-off delay time is 15 ns
a 30V drain to source voltage (Vdss)
SI5468DC-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI5468DC-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SI5468DC-T1-GE3 More Descriptions
Single N-Channel 30 V 28 mOhm SMT TrenchFET Power Mosfet - 1206-8 ChipFET
SI5468DC-T1-GE3 N-channel MOSFET Transistor, 6 A, 30 V, 8-Pin 1206 ChipFET | Siliconix / Vishay SI5468DC-T1-GE3
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(On):0.023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: No
SI5468DC-T1-GE3 N-channel MOSFET Transistor, 6 A, 30 V, 8-Pin 1206 ChipFET | Siliconix / Vishay SI5468DC-T1-GE3
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(On):0.023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: No
The three parts on the right have similar specifications to SI5468DC-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureElement ConfigurationDrain to Source Breakdown VoltageDrain to Source ResistanceRds On MaxContact PlatingVoltageCurrentThreshold VoltageInput CapacitanceREACH SVHCView Compare
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SI5468DC-T1-GE314 WeeksSurface MountSurface Mount8-SMD, Flat Lead884.99187mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)8EAR9928MOhmPURE MATTE TINMOSFET (Metal Oxide)DUALC BEND2603081SINGLE WITH BUILT-IN DIODE12.3W Ta 5.7W TcENHANCEMENT MODE2.3W5 nsN-ChannelSWITCHING28m Ω @ 6.8A, 10V2.5V @ 250μA435pF @ 15V6A Tc12nC @ 10V10ns30V4.5V 10V±20V10 ns15 ns6A20V6A30V1.1mm3.05mm1.65mmNoROHS3 CompliantLead Free--------------
-
-Surface MountSurface Mount8-SMD, Flat Lead----55°C~150°C TJTape & Reel (TR)TrenchFET®2016--Obsolete1 (Unlimited)--85mOhm-MOSFET (Metal Oxide)--------1.3W Ta-1.3W-P-Channel-85mOhm @ 3.1A, 4.5V600mV @ 250μA (Min)-3.1A Ta11nC @ 4.5V-30V2.5V 4.5V±12V-35 ns3.1A12V------ROHS3 Compliant-1206-8 ChipFET™150°C-55°CSingle30V85mOhm85 mΩ------
-
-Surface MountSurface Mount8-SMD, Flat Lead884.99187mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2014--Obsolete1 (Unlimited)--32mOhm-MOSFET (Metal Oxide)-----1-12.3W Ta 5.7W Tc-5.7W20 nsP-Channel-32mOhm @ 5.4A, 4.5V1V @ 250μA1600pF @ 6V6A Tc50nC @ 8V40ns12V1.8V 4.5V±8V40 ns45 ns-6A8V--1.1mm3.05mm1.65mmNoROHS3 CompliantLead Free1206-8 ChipFET™150°C-55°CSingle-12V32mOhm32 mΩTin12V6A-400mV1.6nFUnknown
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-Surface MountSurface Mount8-SMD, Flat Lead884.99187mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2015--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-------11.3W Ta-1.3W13 nsP-Channel-85mOhm @ 3.1A, 4.5V600mV @ 250μA (Min)-3.1A Ta11nC @ 4.5V14ns30V2.5V 4.5V±12V14 ns35 ns-4.3A12V--1.1mm3.05mm1.65mm-ROHS3 Compliant-1206-8 ChipFET™150°C-55°CSingle-85mOhm85 mΩ------
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