Vishay Siliconix SI4866DY-T1-E3

Name: SI4866DY-T1-E3
Brand: Vishay Siliconix
SKU: 2482065-SI4866DY-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4866DY-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2482065-SI4866DY-T1-E3

Description:: MOSFET N-CH 12V 11A 8-SOIC

ECAD Model:

Datasheet:: SI4866DY-T1-E3

Specifications

Vishay Siliconix SI4866DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4866DY-T1-E3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
186.993455mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
5.5mOhm
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
8
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.6W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
28 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.5m Ω @ 17A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C
11A Ta
Gate Charge (Qg) (Max) @ Vgs
30nC @ 4.5V
Rise Time
32ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
35 ns
Turn-Off Delay Time
82 ns
Continuous Drain Current (ID)
17A
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
12V
Nominal Vgs
600 mV
Height
1.55mm
Length
5mm
Width
4mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI4866DY-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and this device has 17A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 12V, and this device has a drainage-to-source breakdown voltage of 12VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 82 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 28 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.

SI4866DY-T1-E3 Features
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 82 ns

SI4866DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4866DY-T1-E3 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

SI4866DY-T1-E3 More Descriptions

Single N-Channel 12 V 0.0055 Ohm Surface Mount Power Mosfet - SOIC-8
N-CH REDUCED Qg, FAST SWITCHING MOSFET
Trans MOSFET N-CH 12V 11A 8-Pin SOIC N T/R
Small Signal Field-Effect Transistor, 11A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel MOSFETs 12 Volt 11 Amp 3.0W
French Electronic Distributor since 1988
Date Code:0615 ;RoHS Compliant:Yes;
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:17A; Drain Source Voltage, Vds:12V; On Resistance, Rds(on):0.0055ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:0.6V; Power Dissipation, Pd:1.6W ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to SI4866DY-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Technology

Terminal Position

Terminal Form

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Pbfree Code

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Input Capacitance (Ciss) (Max) @ Vds

Configuration

Drain to Source Voltage (Vdss)

Threshold Voltage

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
SI4866DY-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2009

e3

Active

1 (Unlimited)

8

EAR99

5.5mOhm

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

8

1

1

1.6W Ta

Single

ENHANCEMENT MODE

1.6W

28 ns

N-Channel

SWITCHING

5.5m Ω @ 17A, 4.5V

600mV @ 250μA (Min)

11A Ta

30nC @ 4.5V

32ns

2.5V 4.5V

±8V

35 ns

82 ns

17A

8V

12V

600 mV

1.55mm

5mm

4mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
SI4884BDY-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2009

e3

Obsolete

1 (Unlimited)

8

EAR99

9mOhm

-

MOSFET (Metal Oxide)

DUAL

GULL WING

8

1

1

2.5W Ta 4.45W Tc

Single

ENHANCEMENT MODE

2.5W

8 ns

N-Channel

SWITCHING

9m Ω @ 10A, 10V

3V @ 250μA

16.5A Tc

35nC @ 10V

11ns

4.5V 10V

±20V

8 ns

22 ns

16.5A

20V

30V

-

1.55mm

5mm

4mm

-

No

ROHS3 Compliant

Lead Free

Tin

yes

FET General Purpose Powers

260

30

1525pF @ 15V

-

-

-

-

-

SI4866DY-T1-E3 vs SI4884BDY-T1-E3
SI4825DDY-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

e3

Active

1 (Unlimited)

8

EAR99

12.5MOhm

PURE MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

8

1

1

2.7W Ta 5W Tc

-

ENHANCEMENT MODE

2.7W

48 ns

P-Channel

SWITCHING

12.5m Ω @ 10A, 10V

2.5V @ 250μA

14.9A Tc

86nC @ 10V

92ns

4.5V 10V

±25V

19 ns

34 ns

10.9A

25V

-30V

-

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

260

30

2550pF @ 15V

SINGLE WITH BUILT-IN DIODE

30V

-1.4V

-

-

SI4866DY-T1-E3 vs SI4825DDY-T1-GE3
SI4888DY-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

e3

Obsolete

1 (Unlimited)

8

EAR99

-

Matte Tin (Sn)

MOSFET (Metal Oxide)

DUAL

GULL WING

8

1

-

1.6W Ta

Single

ENHANCEMENT MODE

1.6W

14 ns

N-Channel

SWITCHING

7m Ω @ 16A, 10V

1.6V @ 250μA

11A Ta

24nC @ 5V

10ns

4.5V 10V

±20V

20 ns

44 ns

11A

20V

-

-

-

-

-

-

No

ROHS3 Compliant

-

-

yes

FET General Purpose Power

260

40

-

-

30V

-

0.007Ohm

30V

SI4866DY-T1-E3 vs SI4888DY-T1-GE3