Vishay Siliconix SI4876DY-T1-E3

SI4876DY-T1-E3 Overview
This device conducts a continuous drain current (ID) of 21A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 14A.When the device is turned off, a turn-off delay time of 175 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).

SI4876DY-T1-E3 Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 175 ns


SI4876DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4876DY-T1-E3 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching