Vishay Siliconix SI4848DY-T1-GE3
- Part Number:
- SI4848DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2483828-SI4848DY-T1-GE3
- Description:
- MOSFET N-CH 150V 2.7A 8-SOIC
- Datasheet:
- SI4848DY-T1-GE3
Vishay Siliconix SI4848DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4848DY-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2015
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance85mOhm
- Terminal FinishSilver (Ag)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.5W
- Turn On Delay Time9 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs85m Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA (Min)
- Current - Continuous Drain (Id) @ 25°C2.7A Ta
- Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
- Rise Time10ns
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)17 ns
- Turn-Off Delay Time24 ns
- Continuous Drain Current (ID)2.7A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage150V
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4848DY-T1-GE3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 150V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 150V.As a result of its turn-off delay time, which is 24 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2V.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
SI4848DY-T1-GE3 Features
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 24 ns
a threshold voltage of 2V
SI4848DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4848DY-T1-GE3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 150V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 150V.As a result of its turn-off delay time, which is 24 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2V.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
SI4848DY-T1-GE3 Features
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 24 ns
a threshold voltage of 2V
SI4848DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4848DY-T1-GE3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI4848DY-T1-GE3 More Descriptions
N-Channel 150 V 0.085 Ohm 1.5 W Surface Mount Power Mosfet - SOIC-8
Trans MOSFET N-CH 150V 2.7A 8-Pin SOIC N T/R
N Ch Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:1.5W Rohs Compliant: No |Vishay SI4848DY-T1-GE3.
MOSFET, N-CH, 150V, 2.7A, NSOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 1.5W; Transistor Case Style: NSOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
Trans MOSFET N-CH 150V 2.7A 8-Pin SOIC N T/R
N Ch Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:1.5W Rohs Compliant: No |Vishay SI4848DY-T1-GE3.
MOSFET, N-CH, 150V, 2.7A, NSOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 1.5W; Transistor Case Style: NSOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
The three parts on the right have similar specifications to SI4848DY-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Rated DCReach Compliance CodeQualification StatusTransistor ApplicationDrain Current-Max (Abs) (ID)HeightLengthWidthDrain-source On Resistance-MaxSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Drain to Source ResistanceRds On MaxNominal VgsView Compare
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SI4848DY-T1-GE314 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e4yesActive1 (Unlimited)8EAR9985mOhmSilver (Ag)FET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING260308111.5W TaSingleENHANCEMENT MODE1.5W9 nsN-Channel85m Ω @ 3.5A, 10V2V @ 250μA (Min)2.7A Ta21nC @ 10V10ns6V 10V±20V17 ns24 ns2.7A2V20V150VUnknownNoROHS3 CompliantLead Free-----------------
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-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2008e3yesObsolete1 (Unlimited)8EAR9934mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED81-1.6W TaSingleENHANCEMENT MODE3.6W40 nsN-Channel5m Ω @ 21A, 4.5V600mV @ 250μA (Min)14A Ta80nC @ 4.5V30ns2.5V 4.5V±12V30 ns175 ns21A-12V20V--ROHS3 CompliantLead Free20VunknownNot QualifiedSWITCHING14A1.5494mm4.9784mm3.9878mm--------
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14 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesActive1 (Unlimited)8EAR99-Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260408111.6W TaSingleENHANCEMENT MODE--N-Channel3.5m Ω @ 25A, 4.5V2V @ 250μA17A Ta70nC @ 4.5V-2.5V 4.5V±8V--25A-8V20V--ROHS3 Compliant--unknownNot QualifiedSWITCHING----0.0035Ohm-------
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-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2009--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)------11.56W TaSingle---N-Channel9mOhm @ 14A, 10V3V @ 250μA10A Ta28nC @ 5V-4.5V 10V±20V--10A-20V40V--ROHS3 Compliant----------8-SO150°C-55°C40V9mOhm9 mΩ3 V
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