SI4840BDY-T1-GE3

Vishay Siliconix SI4840BDY-T1-GE3

Part Number:
SI4840BDY-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2483876-SI4840BDY-T1-GE3
Description:
MOSFET N-CH 40V 19A 8SOIC
ECAD Model:
Datasheet:
SI4840BDY-T1-GE3

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Specifications
Vishay Siliconix SI4840BDY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4840BDY-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    186.993455mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    9mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta 6W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    9m Ω @ 12.4A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2000pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    19A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 10V
  • Rise Time
    12ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    12.4A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    40V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    1 V
  • Height
    1.75mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4840BDY-T1-GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2000pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SI4840BDY-T1-GE3 Features
a continuous drain current (ID) of 12.4A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 30 ns
a threshold voltage of 1V


SI4840BDY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4840BDY-T1-GE3 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI4840BDY-T1-GE3 More Descriptions
N-Channel 40 V 0.009 Ohm 6 W Surface Mount Power Mosfet - SOIC-8
Trans MOSFET N-CH 40V 19A 8-Pin SOIC N T/R / MOSFET N-CH 40V 19A 8SOIC
Small Signal Field-Effect Transistor, 19A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N CH, 40V, 0.0074OHM, 19A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Product Comparison
The three parts on the right have similar specifications to SI4840BDY-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Drain to Source Resistance
    Rds On Max
    Configuration
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • SI4840BDY-T1-GE3
    SI4840BDY-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    9mOhm
    Matte Tin (Sn)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    1
    2.5W Ta 6W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    10 ns
    N-Channel
    SWITCHING
    9m Ω @ 12.4A, 10V
    3V @ 250μA
    2000pF @ 20V
    19A Tc
    50nC @ 10V
    12ns
    4.5V 10V
    ±20V
    10 ns
    30 ns
    12.4A
    1V
    20V
    40V
    150°C
    1 V
    1.75mm
    5mm
    4mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4840DY-T1-GE3
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    1.56W Ta
    Single
    -
    -
    -
    N-Channel
    -
    9mOhm @ 14A, 10V
    3V @ 250μA
    -
    10A Ta
    28nC @ 5V
    -
    4.5V 10V
    ±20V
    -
    -
    10A
    -
    20V
    40V
    -
    3 V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    8-SO
    150°C
    -55°C
    40V
    9mOhm
    9 mΩ
    -
    -
    -
  • SI4825DDY-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    -
    Active
    1 (Unlimited)
    8
    EAR99
    12.5MOhm
    PURE MATTE TIN
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    8
    1
    1
    2.7W Ta 5W Tc
    -
    ENHANCEMENT MODE
    2.7W
    48 ns
    P-Channel
    SWITCHING
    12.5m Ω @ 10A, 10V
    2.5V @ 250μA
    2550pF @ 15V
    14.9A Tc
    86nC @ 10V
    92ns
    4.5V 10V
    ±25V
    19 ns
    34 ns
    10.9A
    -1.4V
    25V
    -30V
    -
    -
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    30V
    -
    -
    SINGLE WITH BUILT-IN DIODE
    -
    -
  • SI4888DY-T1-GE3
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    -
    1.6W Ta
    Single
    ENHANCEMENT MODE
    1.6W
    14 ns
    N-Channel
    SWITCHING
    7m Ω @ 16A, 10V
    1.6V @ 250μA
    -
    11A Ta
    24nC @ 5V
    10ns
    4.5V 10V
    ±20V
    20 ns
    44 ns
    11A
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    30V
    -
    -
    -
    0.007Ohm
    30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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