Vishay Siliconix SI4840BDY-T1-GE3
- Part Number:
- SI4840BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2483876-SI4840BDY-T1-GE3
- Description:
- MOSFET N-CH 40V 19A 8SOIC
- Datasheet:
- SI4840BDY-T1-GE3
Vishay Siliconix SI4840BDY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4840BDY-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight186.993455mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance9mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta 6W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9m Ω @ 12.4A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2000pF @ 20V
- Current - Continuous Drain (Id) @ 25°C19A Tc
- Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)12.4A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage40V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs1 V
- Height1.75mm
- Length5mm
- Width4mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4840BDY-T1-GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2000pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI4840BDY-T1-GE3 Features
a continuous drain current (ID) of 12.4A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 30 ns
a threshold voltage of 1V
SI4840BDY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4840BDY-T1-GE3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2000pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI4840BDY-T1-GE3 Features
a continuous drain current (ID) of 12.4A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 30 ns
a threshold voltage of 1V
SI4840BDY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4840BDY-T1-GE3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI4840BDY-T1-GE3 More Descriptions
N-Channel 40 V 0.009 Ohm 6 W Surface Mount Power Mosfet - SOIC-8
Trans MOSFET N-CH 40V 19A 8-Pin SOIC N T/R / MOSFET N-CH 40V 19A 8SOIC
Small Signal Field-Effect Transistor, 19A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N CH, 40V, 0.0074OHM, 19A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Trans MOSFET N-CH 40V 19A 8-Pin SOIC N T/R / MOSFET N-CH 40V 19A 8SOIC
Small Signal Field-Effect Transistor, 19A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N CH, 40V, 0.0074OHM, 19A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
The three parts on the right have similar specifications to SI4840BDY-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Drain to Source ResistanceRds On MaxConfigurationDrain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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SI4840BDY-T1-GE314 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesActive1 (Unlimited)8EAR999mOhmMatte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING260408112.5W Ta 6W TcSingleENHANCEMENT MODE2.5W10 nsN-ChannelSWITCHING9m Ω @ 12.4A, 10V3V @ 250μA2000pF @ 20V19A Tc50nC @ 10V12ns4.5V 10V±20V10 ns30 ns12.4A1V20V40V150°C1 V1.75mm5mm4mmUnknownNoROHS3 CompliantLead Free----------
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-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2009--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)------11.56W TaSingle---N-Channel-9mOhm @ 14A, 10V3V @ 250μA-10A Ta28nC @ 5V-4.5V 10V±20V--10A-20V40V-3 V-----ROHS3 Compliant-8-SO150°C-55°C40V9mOhm9 mΩ---
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14 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3-Active1 (Unlimited)8EAR9912.5MOhmPURE MATTE TIN-MOSFET (Metal Oxide)DUALGULL WING260308112.7W Ta 5W Tc-ENHANCEMENT MODE2.7W48 nsP-ChannelSWITCHING12.5m Ω @ 10A, 10V2.5V @ 250μA2550pF @ 15V14.9A Tc86nC @ 10V92ns4.5V 10V±25V19 ns34 ns10.9A-1.4V25V-30V--1.5mm5mm4mmNo SVHCNoROHS3 Compliant----30V--SINGLE WITH BUILT-IN DIODE--
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesObsolete1 (Unlimited)8EAR99-Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING2604081-1.6W TaSingleENHANCEMENT MODE1.6W14 nsN-ChannelSWITCHING7m Ω @ 16A, 10V1.6V @ 250μA-11A Ta24nC @ 5V10ns4.5V 10V±20V20 ns44 ns11A-20V-------NoROHS3 Compliant----30V---0.007Ohm30V
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