Vishay Siliconix SI4778DY-T1-GE3
- Part Number:
- SI4778DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2479253-SI4778DY-T1-GE3
- Description:
- MOSFET N-CH 25V 8A 8-SOIC
- Datasheet:
- SI4778DY-T1-GE3
Vishay Siliconix SI4778DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4778DY-T1-GE3.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight186.993455mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishPURE MATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.4W Ta 5W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs23m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds680pF @ 13V
- Current - Continuous Drain (Id) @ 25°C8A Tc
- Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
- Rise Time50ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)8A
- Gate to Source Voltage (Vgs)16V
- Drain Current-Max (Abs) (ID)8A
- Drain-source On Resistance-Max0.023Ohm
- Drain to Source Breakdown Voltage25V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SI4778DY-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 680pF @ 13V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8A amps.In this device, the drain-source breakdown voltage is 25V and VGS=25V, so the drain-source breakdown voltage is 25V in this case.A device can conduct a maximum continuous current of [8A] according to its drain current.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI4778DY-T1-GE3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 20 ns
SI4778DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4778DY-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 680pF @ 13V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8A amps.In this device, the drain-source breakdown voltage is 25V and VGS=25V, so the drain-source breakdown voltage is 25V in this case.A device can conduct a maximum continuous current of [8A] according to its drain current.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI4778DY-T1-GE3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 20 ns
SI4778DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4778DY-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI4778DY-T1-GE3 More Descriptions
Single N-Channel 25 V 2.4 W 18 nC Silicon Surface Mount Mosfet - SOIC-8
Trans MOSFET N-CH 25V 8A 8-Pin SOIC N T/R
Transistor Polarity:n Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: No
Trans MOSFET N-CH 25V 8A 8-Pin SOIC N T/R
Transistor Polarity:n Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: No
The three parts on the right have similar specifications to SI4778DY-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageRadiation HardeningRoHS StatusConfigurationNominal VgsPower DissipationHeightLengthWidthSupplier Device PackageResistanceDrain to Source Voltage (Vdss)FET FeatureDrain to Source ResistanceView Compare
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SI4778DY-T1-GE315 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3Obsolete1 (Unlimited)8EAR99PURE MATTE TINMOSFET (Metal Oxide)DUALGULL WING260308112.4W Ta 5W TcSingleENHANCEMENT MODE15 nsN-ChannelSWITCHING23m Ω @ 7A, 10V2.2V @ 250μA680pF @ 13V8A Tc18nC @ 10V50ns4.5V 10V±16V10 ns20 ns8A16V8A0.023Ohm25VNoROHS3 Compliant------------
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15 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)SkyFET®, TrenchFET®2013e3Obsolete1 (Unlimited)8EAR99PURE MATTE TINMOSFET (Metal Oxide)DUALGULL WING260308112.5W Ta 5W Tc-ENHANCEMENT MODE16 nsN-Channel-13m Ω @ 15A, 10V2.5V @ 1mA1084pF @ 15V14.6A Tc28nC @ 10V18ns4.5V 10V±20V10 ns15 ns14.6A2.5V--30VNoROHS3 CompliantSINGLE WITH BUILT-IN DIODE2.5 V---------
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15 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3Obsolete1 (Unlimited)8EAR99PURE MATTE TINMOSFET (Metal Oxide)DUALGULL WING260308112.4W Ta 5W TcSingleENHANCEMENT MODE15 nsN-ChannelSWITCHING23m Ω @ 7A, 10V2.2V @ 250μA680pF @ 13V8A Tc18nC @ 10V50ns4.5V 10V±16V10 ns20 ns8A16V8A0.023Ohm25VNoROHS3 Compliant--2.4W1.5mm5mm4mm-----
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13 Weeks-Surface Mount8-SOIC (0.154, 3.90mm Width)-540.001716mg--55°C~150°C TATape & Reel (TR)SkyFET®, TrenchFET®2017-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)------15W Tc--8 nsN-Channel-9.5mOhm @ 10A, 10V2.3V @ 1mA1025pF @ 15V16A Tc14.3nC @ 4.5V13ns4.5V 10V±20V9 ns14 ns16A20V----ROHS3 Compliant------8-SO9.5mOhm30VSchottky Diode (Body)7.9mOhm
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