Vishay Siliconix SI4634DY-T1-E3
- Part Number:
- SI4634DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2850294-SI4634DY-T1-E3
- Description:
- MOSFET N-CH 30V 24.5A 8-SOIC
- Datasheet:
- SI4634DY-T1-E3
Vishay Siliconix SI4634DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4634DY-T1-E3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight186.993455mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance5.2mOhm
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta 5.7W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.2m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2.6V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3150pF @ 15V
- Current - Continuous Drain (Id) @ 25°C24.5A Tc
- Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
- Rise Time10ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time33 ns
- Continuous Drain Current (ID)16.3A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)70A
- Height1.5mm
- Length5mm
- Width4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4634DY-T1-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3150pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 70A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI4634DY-T1-E3 Features
a continuous drain current (ID) of 16.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 70A.
SI4634DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4634DY-T1-E3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3150pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 70A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI4634DY-T1-E3 Features
a continuous drain current (ID) of 16.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 70A.
SI4634DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4634DY-T1-E3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI4634DY-T1-E3 More Descriptions
Single N-Channel 30 V 5.2 mOhms Surface Mount Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 16.3A 8-Pin SOIC N T/R
N-CH 30V 25A 5mOhm SO-8 RoHSconf
French Electronic Distributor since 1988
Trans MOSFET N-CH 30V 16.3A 8-Pin SOIC N T/R
N-CH 30V 25A 5mOhm SO-8 RoHSconf
French Electronic Distributor since 1988
The three parts on the right have similar specifications to SI4634DY-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxContact PlatingThreshold VoltageDrain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)REACH SVHCView Compare
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SI4634DY-T1-E314 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3Active1 (Unlimited)8EAR995.2mOhmMATTE TINMOSFET (Metal Oxide)DUALGULL WING260408112.5W Ta 5.7W TcSingleENHANCEMENT MODE2.5W14 nsN-ChannelSWITCHING5.2m Ω @ 15A, 10V2.6V @ 250μA3150pF @ 15V24.5A Tc68nC @ 10V10ns4.5V 10V±20V8 ns33 ns16.3A20V30V70A1.5mm5mm4mmNoROHS3 CompliantLead Free--------------
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13 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)SkyFET®, TrenchFET®2009-Active1 (Unlimited)----MOSFET (Metal Oxide)-------3W Ta 5.9W Tc----N-Channel-6.5mOhm @ 15A, 10V2.7V @ 1mA4190pF @ 15V22.4A Tc100nC @ 10V19ns4.5V 10V±20V18 ns44 ns22.4A20V30V-----ROHS3 Compliant-8-SO150°C-55°C30V4.19nF6.5mOhm6.5 mΩ------
-
21 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8---55°C~150°C TJTape & Reel (TR)TrenchFET®2016-Active1 (Unlimited)----MOSFET (Metal Oxide)-------2.5W Ta 5W TcSingle-2.5W-N-Channel-10.5mOhm @ 15A, 10V2.6V @ 250μA1654pF @ 15V16.2A Tc42nC @ 10V12ns4.5V 10V±16V18 ns73 ns16.2A16V25V----NoROHS3 Compliant-8-SO150°C-55°C25V1.654nF10.5mOhm10.5 mΩ------
-
14 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2012e3Active1 (Unlimited)8EAR99--MOSFET (Metal Oxide)DUALGULL WING260408112.5W Ta 5.7W TcSingleENHANCEMENT MODE2.5W14 nsN-ChannelSWITCHING5.2m Ω @ 15A, 10V2.6V @ 250μA3150pF @ 15V24.5A Tc68nC @ 10V10ns4.5V 10V±20V8 ns33 ns24.5A20V-70A1.5mm5mm4mmNoROHS3 Compliant----30V---Tin2.6V0.0052Ohm30V45 mJUnknown
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