SI4634DY-T1-E3

Vishay Siliconix SI4634DY-T1-E3

Part Number:
SI4634DY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2850294-SI4634DY-T1-E3
Description:
MOSFET N-CH 30V 24.5A 8-SOIC
ECAD Model:
Datasheet:
SI4634DY-T1-E3

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Specifications
Vishay Siliconix SI4634DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4634DY-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    186.993455mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2013
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    5.2mOhm
  • Terminal Finish
    MATTE TIN
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta 5.7W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.2m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.6V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3150pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    24.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    68nC @ 10V
  • Rise Time
    10ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    33 ns
  • Continuous Drain Current (ID)
    16.3A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    70A
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4634DY-T1-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3150pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 70A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SI4634DY-T1-E3 Features
a continuous drain current (ID) of 16.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 70A.


SI4634DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4634DY-T1-E3 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI4634DY-T1-E3 More Descriptions
Single N-Channel 30 V 5.2 mOhms Surface Mount Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 16.3A 8-Pin SOIC N T/R
N-CH 30V 25A 5mOhm SO-8 RoHSconf
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to SI4634DY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Contact Plating
    Threshold Voltage
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    REACH SVHC
    View Compare
  • SI4634DY-T1-E3
    SI4634DY-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    5.2mOhm
    MATTE TIN
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    1
    2.5W Ta 5.7W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    14 ns
    N-Channel
    SWITCHING
    5.2m Ω @ 15A, 10V
    2.6V @ 250μA
    3150pF @ 15V
    24.5A Tc
    68nC @ 10V
    10ns
    4.5V 10V
    ±20V
    8 ns
    33 ns
    16.3A
    20V
    30V
    70A
    1.5mm
    5mm
    4mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4638DY-T1-E3
    13 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    SkyFET®, TrenchFET®
    2009
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    3W Ta 5.9W Tc
    -
    -
    -
    -
    N-Channel
    -
    6.5mOhm @ 15A, 10V
    2.7V @ 1mA
    4190pF @ 15V
    22.4A Tc
    100nC @ 10V
    19ns
    4.5V 10V
    ±20V
    18 ns
    44 ns
    22.4A
    20V
    30V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    8-SO
    150°C
    -55°C
    30V
    4.19nF
    6.5mOhm
    6.5 mΩ
    -
    -
    -
    -
    -
    -
  • SI4668DY-T1-GE3
    21 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    2.5W Ta 5W Tc
    Single
    -
    2.5W
    -
    N-Channel
    -
    10.5mOhm @ 15A, 10V
    2.6V @ 250μA
    1654pF @ 15V
    16.2A Tc
    42nC @ 10V
    12ns
    4.5V 10V
    ±16V
    18 ns
    73 ns
    16.2A
    16V
    25V
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    8-SO
    150°C
    -55°C
    25V
    1.654nF
    10.5mOhm
    10.5 mΩ
    -
    -
    -
    -
    -
    -
  • SI4634DY-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    1
    2.5W Ta 5.7W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    14 ns
    N-Channel
    SWITCHING
    5.2m Ω @ 15A, 10V
    2.6V @ 250μA
    3150pF @ 15V
    24.5A Tc
    68nC @ 10V
    10ns
    4.5V 10V
    ±20V
    8 ns
    33 ns
    24.5A
    20V
    -
    70A
    1.5mm
    5mm
    4mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    30V
    -
    -
    -
    Tin
    2.6V
    0.0052Ohm
    30V
    45 mJ
    Unknown
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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