Vishay Siliconix SI4134DY-T1-GE3

Name: SI4134DY-T1-GE3
Brand: Vishay Siliconix
SKU: 2481403-SI4134DY-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4134DY-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2481403-SI4134DY-T1-GE3

Description:: MOSFET N-CH 30V 14A 8-SOIC

ECAD Model:

Datasheet:: SI4134DY-T1-GE3

Specifications

Vishay Siliconix SI4134DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4134DY-T1-GE3.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
186.993455mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
14MOhm
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.5W Ta 5W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
5W
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
846pF @ 15V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
14 ns
Continuous Drain Current (ID)
9.9A
Threshold Voltage
1.8V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI4134DY-T1-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 846pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9.9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 14 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.8V, which means that it will not activate any of its functions when its threshold voltage reaches 1.8V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SI4134DY-T1-GE3 Features
a continuous drain current (ID) of 9.9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
a threshold voltage of 1.8V

SI4134DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4134DY-T1-GE3 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

SI4134DY-T1-GE3 More Descriptions

Single N-Channel 30 V 14 mOhm Surface Mount Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R / MOSFET N-CH 30V 14A 8-SOIC
Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N-CH, 30V, 14A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:14A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V; Power Dissipation:5W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI4134DY-T1-GE3.

Product Comparison

The three parts on the right have similar specifications to SI4134DY-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Subcategory

Drain Current-Max (Abs) (ID)

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Rds On Max

View Compare
SI4134DY-T1-GE3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2004

e3

Active

1 (Unlimited)

8

EAR99

14MOhm

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

1

1

2.5W Ta 5W Tc

Single

ENHANCEMENT MODE

5W

15 ns

N-Channel

SWITCHING

14m Ω @ 10A, 10V

2.5V @ 250μA

846pF @ 15V

14A Tc

23nC @ 10V

12ns

4.5V 10V

±20V

10 ns

14 ns

9.9A

1.8V

20V

30V

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
SI4102DY-T1-GE3

Vishay Siliconix

15 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

e3

Obsolete

1 (Unlimited)

8

EAR99

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

8

1

1

2.4W Ta 4.8W Tc

Single

ENHANCEMENT MODE

4.8W

10 ns

N-Channel

SWITCHING

158m Ω @ 2.7A, 10V

4V @ 250μA

370pF @ 50V

3.8A Tc

11nC @ 10V

10ns

6V 10V

±20V

10 ns

12 ns

2.7A

2V

20V

100V

1.55mm

5mm

4mm

Unknown

No

ROHS3 Compliant

Lead Free

yes

FET General Purpose Power

0.0027A

-

-

-

-

-

-

-

SI4134DY-T1-GE3 vs SI4102DY-T1-GE3
SI4116DY-T1-E3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

Active

1 (Unlimited)

8

EAR99

8.6MOhm

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

8

1

1

2.5W Ta 5W Tc

Single

ENHANCEMENT MODE

2.5W

13 ns

N-Channel

SWITCHING

8.6m Ω @ 10A, 10V

1.4V @ 250μA

1925pF @ 15V

18A Tc

56nC @ 10V

11ns

2.5V 10V

±12V

15 ns

50 ns

12.7A

-

12V

-

1.55mm

5mm

4mm

-

No

ROHS3 Compliant

Lead Free

yes

FET General Purpose Powers

-

25V

25V

-

-

-

-

-

SI4134DY-T1-GE3 vs SI4116DY-T1-E3
SI4196DY-T1-E3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

2W Ta 4.6W Tc

-

-

-

8 ns

N-Channel

-

27mOhm @ 8A, 4.5V

1V @ 250μA

830pF @ 10V

8A Tc

22nC @ 8V

13ns

1.8V 4.5V

±8V

9 ns

33 ns

8A

-

8V

-

-

-

-

-

No

ROHS3 Compliant

-

-

-

-

20V

-

8-SO

150°C

-55°C

830pF

27 mΩ

SI4134DY-T1-GE3 vs SI4196DY-T1-E3