Vishay Siliconix SI2312BDS-T1-GE3

Name: SI2312BDS-T1-GE3
Brand: Vishay Siliconix
SKU: 2478021-SI2312BDS-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI2312BDS-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478021-SI2312BDS-T1-GE3

Description:: MOSFET N-CH 20V 3.9A SOT23-3

ECAD Model:

Datasheet:: SI2312BDS-T1-GE3

Specifications

Vishay Siliconix SI2312BDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2312BDS-T1-GE3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
31mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
750mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
750mW
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
31m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C
3.9A Ta
Gate Charge (Qg) (Max) @ Vgs
12nC @ 4.5V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
30 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
8V
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
20V
Dual Supply Voltage
20V
Nominal Vgs
8 V
Height
1.02mm
Length
3.04mm
Width
1.4mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI2312BDS-T1-GE3 Overview
Its continuous drain current is 5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 8V.This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.

SI2312BDS-T1-GE3 Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 35 ns
a threshold voltage of 8V

SI2312BDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2312BDS-T1-GE3 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

SI2312BDS-T1-GE3 More Descriptions

Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV; Power Dissipation:750mW; No. of Pins:3PinsRoHS Compliant: No
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:8V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Junction Temperature Tj Max:150°C; Package / Case:SOT-23; Power Dissipation Pd:750mW; Power Dissipation Pd:750mW; Rise Time:30ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V

Product Comparison

The three parts on the right have similar specifications to SI2312BDS-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

Qualification Status

Input Capacitance (Ciss) (Max) @ Vds

Drain-source On Resistance-Max

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Forward Voltage

View Compare
SI2312BDS-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

31mOhm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

1

750mW Ta

Single

ENHANCEMENT MODE

750mW

9 ns

N-Channel

SWITCHING

31m Ω @ 5A, 4.5V

850mV @ 250μA

3.9A Ta

12nC @ 4.5V

30ns

1.8V 4.5V

±8V

30 ns

35 ns

5A

8V

8V

20V

20V

8 V

1.02mm

3.04mm

1.4mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
SI2335DS-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Obsolete

1 (Unlimited)

3

-

EAR99

-

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

-

750mW Ta

Single

ENHANCEMENT MODE

750mW

13 ns

P-Channel

-

51m Ω @ 4A, 4.5V

450mV @ 250μA (Min)

3.2A Ta

15nC @ 4.5V

-

1.8V 4.5V

±8V

-

50 ns

3.2A

-

8V

12V

-

-

-

-

-

-

-

ROHS3 Compliant

-

unknown

Not Qualified

1225pF @ 6V

0.051Ohm

-

-

-

-

-

-

-

-

SI2312BDS-T1-GE3 vs SI2335DS-T1-GE3
SI2323DS-T1

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

750mW Ta

Single

-

1.25W

25 ns

P-Channel

-

39mOhm @ 4.7A, 4.5V

1V @ 250μA

3.7A Ta

19nC @ 4.5V

43ns

1.8V 4.5V

±8V

43 ns

71 ns

3.7A

-

8V

-20V

-

-

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

-

-

1020pF @ 10V

-

SOT-23-3 (TO-236)

150°C

-55°C

20V

1.02nF

39mOhm

39 mΩ

-

SI2312BDS-T1-GE3 vs SI2323DS-T1
SI2302ADS-T1

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

700mW Ta

Single

-

900mW

7 ns

N-Channel

-

60mOhm @ 3.6A, 4.5V

1.2V @ 50μA

2.1A Ta

10nC @ 4.5V

55ns

2.5V 4.5V

±8V

55 ns

16 ns

2.1A

-

8V

20V

-

-

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

-

-

300pF @ 10V

-

SOT-23-3 (TO-236)

150°C

-55°C

20V

300pF

60mOhm

60 mΩ

760mV

SI2312BDS-T1-GE3 vs SI2302ADS-T1

Certification

Related parts for SI2312BDS-T1-GE3

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SI2305ADS-T1-GE3

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SI2312BDS-T1-GE3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI2312BDS-T1-GE3 DISTI #V72:2272_09216793	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	1161	1 $0.6006 10 $0.5194 25 $0.425 100 $0.3534 250 $0.3181 500 $0.2783 1000 $0.2142
SI2312BDS-T1-GE3 DISTI #V36:1790_09216793	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000 $0.2127
SI2312BDS-T1-GE3 DISTI #SI2312BDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant	160229	1 $0.46 10 $0.397 100 $0.2961 500 $0.23268 1000 $0.1798
SI2312BDS-T1-GE3 DISTI #SI2312BDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant	160229	1 $0.46 10 $0.397 100 $0.2961 500 $0.23268 1000 $0.1798
SI2312BDS-T1-GE3 DISTI #SI2312BDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant	159000	3000 $0.15917 6000 $0.1489 15000 $0.13863 30000 $0.13144 75000 $0.13007
SI2312BDS-T1-GE3 DISTI #33707813	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	3000	3000 $0.1688
SI2312BDS-T1-GE3 DISTI #32142891	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	1161	35 $0.6006
SI2312BDS-T1-GE3 DISTI #30601987	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	49	23 $1.1
SI2312BDS-T1-GE3 DISTI #SI2312BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: RoHS: Compliant	3000	3000 $0.135 6000 $0.12981 9000 $0.125 15000 $0.12054 30000 $0.11638 75000 $0.11441 150000 $0.1125
SI2312BDS-T1-GE3 DISTI #SI2312BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: RoHS: Compliant	0	3000 $0.3809 6000 $0.2599 12000 $0.2239 18000 $0.2059 30000 $0.1919
SI2312BDS-T1-GE3 DISTI #SI2312BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape RoHS: Not Compliant	0	3000 $0.14236 6000 $0.13814 12000 $0.13252 18000 $0.12885 30000 $0.12538
SI2312BDS-T1-GE3 DISTI #16P3709	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 5A, TO-236, Transistor Pol	0	1 $0.606 25 $0.463 50 $0.403 100 $0.343 250 $0.313 500 $0.282 1000 $0.218
SI2312BDS-T1-GE3 DISTI #29X0523	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 3.9A, SOT-23-3, FULL REEL,	0	1 $0.224 5000 $0.219 10000 $0.202 20000 $0.189 30000 $0.176 50000 $0.168
SI2312BDS-T1-GE3. DISTI #16AC0252	Vishay Intertechnologies	Transistor Polarity:N Channel, Continuous Drain C	0	1 $0.224 5000 $0.219 10000 $0.202 20000 $0.189 30000 $0.176 50000 $0.168
SI2312BDS-T1-GE3 DISTI #781-SI2312BDS-T1-GE3	Vishay Intertechnologies	MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant	8300	1 $0.61 10 $0.469 100 $0.348 500 $0.286 1000 $0.221 3000 $0.201
SI2312BDS-T1-GE3 DISTI #	Vishay Intertechnologies	Single N-Channel 20 V 0.031 Ohm Surface Mount Powe RoHS: Compliant	75	1 $0.29 100 $0.188 250 $0.172 500 $0.161 1500 $0.146
SI2312BDST1GE3 DISTI #	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 3.9A I(D), 2 RoHS: Compliant	45000
SI2312BDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant	3000
SI2312BDS-T1-GE3 DISTI #C1S803605191265	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	49	1 $0.88 10 $0.402

SI2312B~~(3)~~
SI2312~~(12)~~
SI231~~(62)~~
SI23~~(173)~~
SI2~~(196)~~

Vishay Siliconix SI2312BDS-T1-GE3

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