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SGW30N60HSFKSA1

Infineon Technologies SGW30N60HSFKSA1

Part Number:
SGW30N60HSFKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2497129-SGW30N60HSFKSA1
Description:
IGBT 600V 41A 250W TO247-3
ECAD Model:
Datasheet:
SGx30N60HS

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Specifications
Infineon Technologies SGW30N60HSFKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SGW30N60HSFKSA1.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2007
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation
    250W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    *GW30N60
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    250W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Halogen Free
    Not Halogen Free
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    41A
  • JEDEC-95 Code
    TO-247AC
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    3.15V
  • Turn On Time
    39 ns
  • Test Condition
    400V, 30A, 11 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3.15V @ 15V, 30A
  • Turn Off Time-Nom (toff)
    301 ns
  • IGBT Type
    NPT
  • Gate Charge
    141nC
  • Current - Collector Pulsed (Icm)
    112A
  • Td (on/off) @ 25°C
    20ns/250ns
  • Switching Energy
    1.15mJ
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
Description
SGW30N60HSFKSA1 Description
SGW30N60HSFKSA1 is a 600v High-Speed IGBT in NPT technology. NPT-Technology for 600V applications offers parallel switching capability, moderate Eoff increase with temperature, and very tight parameter distribution. The Operating and Storage Temperature Range is between -55 and 170℃. And the transistor SGW30N60HSFKSA1 is in the PG-TO-247-3  package with 250W power dissipation.

SGW30N60HSFKSA1 Features
30% lower Eoff compared to the previous generation Short circuit withstand time- 10 us Designed for operation above 30 kHz High ruggedness, temperature-stable behavior Pb-free lead plating; RoHS compliant Qualified according to JEDEC' for target applications

SGW30N60HSFKSA1 Applications
Communications equipment  Broadband fixed line access  Industrial  Appliances  Enterprise systems  Enterprise machine
SGW30N60HSFKSA1 More Descriptions
Trans IGBT Chip N-CH 600V 41A 3-Pin TO-247 Tube
Compliant NPN No SVHC TO-247-3 Not Halogen Free 3 250 W Single
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.15V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic @ Vce Sat:30A; Current Ic Continuous a Max:30A; Package / Case:TO-247; Power Dissipation Max:250W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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