Fairchild/ON Semiconductor SGH40N60UFTU
- Part Number:
- SGH40N60UFTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2495456-SGH40N60UFTU
- Description:
- IGBT 600V 40A 160W TO3P
- ECAD Model:
-
- Datasheet:
- SGH40N60UFTU
Fairchild/ON Semiconductor SGH40N60UFTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SGH40N60UFTU.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time7 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Weight6.401g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- HTS Code8541.29.00.95
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation160W
- Current Rating20A
- Base Part NumberSG*40N60
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation160W
- Input TypeStandard
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current40A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.1V
- Turn On Time67 ns
- Test Condition300V, 20A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 20A
- Turn Off Time-Nom (toff)254 ns
- Gate Charge97nC
- Current - Collector Pulsed (Icm)160A
- Td (on/off) @ 25°C15ns/65ns
- Switching Energy160μJ (on), 200μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max7.5V
- Fall Time-Max (tf)280ns
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SGH40N60UFTU Description
SGH40N60UFTU is a member of the UF series of Insulated Gate Bipolar Transistors (IGBTs) developed by ON Semiconductor. It is able to deliver low conduction and switching losses, high input impedance, as well as short circuit ruggedness. As a result, it is ideally suitable for a wide range of applications, including AC & DC motor controls, general-purpose inverters, robotics, and servo controls.
SGH40N60UFTU Features
Low conduction Low switching losses High input impedance Short circuit ruggedness Package: TO-3P
SGH40N60UFTU Applications
General inverter PFC
SGH40N60UFTU is a member of the UF series of Insulated Gate Bipolar Transistors (IGBTs) developed by ON Semiconductor. It is able to deliver low conduction and switching losses, high input impedance, as well as short circuit ruggedness. As a result, it is ideally suitable for a wide range of applications, including AC & DC motor controls, general-purpose inverters, robotics, and servo controls.
SGH40N60UFTU Features
Low conduction Low switching losses High input impedance Short circuit ruggedness Package: TO-3P
SGH40N60UFTU Applications
General inverter PFC
SGH40N60UFTU More Descriptions
Trans IGBT Chip N-CH 600V 40A 3-Pin(3 Tab) TO-3P(N) Rail
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
IGBT HI PERFORM 600V 20A TO-3P
IGBT Transistors Dis High Perf IGBT
Discrete, High Performance IGBT
CoC and 2-years warranty / RFQ for pricing
TRANSISTOR, NPN, 600V, 40A, TO-3PL;
INSULATED GATE BIPOLAR TRANSISTO
Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where high speed switching is required feature.
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
IGBT HI PERFORM 600V 20A TO-3P
IGBT Transistors Dis High Perf IGBT
Discrete, High Performance IGBT
CoC and 2-years warranty / RFQ for pricing
TRANSISTOR, NPN, 600V, 40A, TO-3PL;
INSULATED GATE BIPOLAR TRANSISTO
Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where high speed switching is required feature.
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