Rohm Semiconductor RUM003N02T2L

RUM003N02T2L Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 25pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 300mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 15 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 300mV threshold voltage. By using drive voltage (1.8V 4V), this device helps reduce its overall power consumption.

RUM003N02T2L Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 15 ns
a threshold voltage of 300mV


RUM003N02T2L Applications
There are a lot of ROHM Semiconductor
RUM003N02T2L applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools