Rohm Semiconductor RSR030N06TL

RSR030N06TL Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 380pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 3A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 30 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4V 10V), this device helps reduce its overall power consumption.

RSR030N06TL Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 30 ns


RSR030N06TL Applications
There are a lot of ROHM Semiconductor
RSR030N06TL applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools