RJK1053DPB-00#J5

Renesas Electronics America RJK1053DPB-00#J5

Part Number:
RJK1053DPB-00#J5
Manufacturer:
Renesas Electronics America
Ventron No:
3813731-RJK1053DPB-00#J5
Description:
MOSFET N-CH 100V 25A LFPAK
ECAD Model:
Datasheet:
RJK1053DPB-00#J5

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Specifications
Renesas Electronics America RJK1053DPB-00#J5 technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America RJK1053DPB-00#J5.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-100, SOT-669
  • Number of Pins
    5
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Pin Count
    5
  • Number of Elements
    1
  • Power Dissipation-Max
    65W Tc
  • Power Dissipation
    65W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    13m Ω @ 12.5A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    6160pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    25A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    43nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    25A
  • Gate to Source Voltage (Vgs)
    20V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
RJK1053DPB-00#J5 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6160pF @ 10V.This device conducts a continuous drain current (ID) of 25A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

RJK1053DPB-00#J5 Features
a continuous drain current (ID) of 25A
a 100V drain to source voltage (Vdss)


RJK1053DPB-00#J5 Applications
There are a lot of Renesas Electronics America
RJK1053DPB-00#J5 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
RJK1053DPB-00#J5 More Descriptions
Trans MOSFET N-CH Si 100V 25A 5-Pin(4 Tab) LFPAK T/R
Nch Single Power Mosfet 100V 25A 13Mohm Lfpak
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 10 mΩ typ. (at VGS = 10 V) Pb-free Halogen-free
Product Comparison
The three parts on the right have similar specifications to RJK1053DPB-00#J5.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    ECCN Code
    Subcategory
    Configuration
    Lead Free
    View Compare
  • RJK1053DPB-00#J5
    RJK1053DPB-00#J5
    Surface Mount
    Surface Mount
    SC-100, SOT-669
    5
    150°C TJ
    Tape & Reel (TR)
    2013
    yes
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    5
    1
    65W Tc
    65W
    N-Channel
    13m Ω @ 12.5A, 10V
    6160pF @ 10V
    25A Ta
    43nC @ 4.5V
    100V
    4.5V 10V
    ±20V
    25A
    20V
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • RJK1003DPN-E0#T2
    Through Hole
    Through Hole
    TO-220-3
    -
    150°C TJ
    Tube
    2012
    -
    Last Time Buy
    1 (Unlimited)
    MOSFET (Metal Oxide)
    4
    -
    125W Tc
    -
    N-Channel
    11m Ω @ 25A, 10V
    4150pF @ 10V
    50A Ta
    59nC @ 10V
    100V
    10V
    ±20V
    50A
    -
    -
    ROHS3 Compliant
    16 Weeks
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
  • RJK1002DPN-E0#T2
    Through Hole
    Through Hole
    TO-220-3
    -
    150°C TJ
    Tube
    2012
    -
    Last Time Buy
    1 (Unlimited)
    MOSFET (Metal Oxide)
    -
    -
    150W Tc
    -
    N-Channel
    7.6m Ω @ 35A, 10V
    6450pF @ 10V
    70A Ta
    94nC @ 10V
    100V
    10V
    ±20V
    70A
    -
    -
    ROHS3 Compliant
    16 Weeks
    -
    -
    EAR99
    FET General Purpose Power
    Single
    -
  • RJK1555DPA-00#J0
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    150°C TJ
    Tape & Reel (TR)
    2009
    yes
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    8
    1
    30W Tc
    30W
    N-Channel
    48m Ω @ 12.5A, 10V
    2400pF @ 25V
    25A Ta
    38nC @ 10V
    150V
    10V
    ±30V
    25A
    30V
    No
    ROHS3 Compliant
    16 Weeks
    -
    -
    -
    -
    -
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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