Renesas Electronics America RJK1053DPB-00#J5
- Part Number:
- RJK1053DPB-00#J5
- Manufacturer:
- Renesas Electronics America
- Ventron No:
- 3813731-RJK1053DPB-00#J5
- Description:
- MOSFET N-CH 100V 25A LFPAK
- Datasheet:
- RJK1053DPB-00#J5
Renesas Electronics America RJK1053DPB-00#J5 technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America RJK1053DPB-00#J5.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-100, SOT-669
- Number of Pins5
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Pin Count5
- Number of Elements1
- Power Dissipation-Max65W Tc
- Power Dissipation65W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs13m Ω @ 12.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds6160pF @ 10V
- Current - Continuous Drain (Id) @ 25°C25A Ta
- Gate Charge (Qg) (Max) @ Vgs43nC @ 4.5V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)25A
- Gate to Source Voltage (Vgs)20V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
RJK1053DPB-00#J5 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6160pF @ 10V.This device conducts a continuous drain current (ID) of 25A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
RJK1053DPB-00#J5 Features
a continuous drain current (ID) of 25A
a 100V drain to source voltage (Vdss)
RJK1053DPB-00#J5 Applications
There are a lot of Renesas Electronics America
RJK1053DPB-00#J5 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6160pF @ 10V.This device conducts a continuous drain current (ID) of 25A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
RJK1053DPB-00#J5 Features
a continuous drain current (ID) of 25A
a 100V drain to source voltage (Vdss)
RJK1053DPB-00#J5 Applications
There are a lot of Renesas Electronics America
RJK1053DPB-00#J5 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
RJK1053DPB-00#J5 More Descriptions
Trans MOSFET N-CH Si 100V 25A 5-Pin(4 Tab) LFPAK T/R
Nch Single Power Mosfet 100V 25A 13Mohm Lfpak
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 10 mΩ typ. (at VGS = 10 V) Pb-free Halogen-free
Nch Single Power Mosfet 100V 25A 13Mohm Lfpak
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 10 mΩ typ. (at VGS = 10 V) Pb-free Halogen-free
The three parts on the right have similar specifications to RJK1053DPB-00#J5.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)TechnologyPin CountNumber of ElementsPower Dissipation-MaxPower DissipationFET TypeRds On (Max) @ Id, VgsInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Radiation HardeningRoHS StatusFactory Lead TimePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)ECCN CodeSubcategoryConfigurationLead FreeView Compare
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RJK1053DPB-00#J5Surface MountSurface MountSC-100, SOT-6695150°C TJTape & Reel (TR)2013yesActive1 (Unlimited)MOSFET (Metal Oxide)5165W Tc65WN-Channel13m Ω @ 12.5A, 10V6160pF @ 10V25A Ta43nC @ 4.5V100V4.5V 10V±20V25A20VNoROHS3 Compliant--------
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Through HoleThrough HoleTO-220-3-150°C TJTube2012-Last Time Buy1 (Unlimited)MOSFET (Metal Oxide)4-125W Tc-N-Channel11m Ω @ 25A, 10V4150pF @ 10V50A Ta59nC @ 10V100V10V±20V50A--ROHS3 Compliant16 WeeksNOT SPECIFIEDNOT SPECIFIED----
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Through HoleThrough HoleTO-220-3-150°C TJTube2012-Last Time Buy1 (Unlimited)MOSFET (Metal Oxide)--150W Tc-N-Channel7.6m Ω @ 35A, 10V6450pF @ 10V70A Ta94nC @ 10V100V10V±20V70A--ROHS3 Compliant16 Weeks--EAR99FET General Purpose PowerSingle-
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Surface MountSurface Mount8-PowerWDFN8150°C TJTape & Reel (TR)2009yesActive1 (Unlimited)MOSFET (Metal Oxide)8130W Tc30WN-Channel48m Ω @ 12.5A, 10V2400pF @ 25V25A Ta38nC @ 10V150V10V±30V25A30VNoROHS3 Compliant16 Weeks-----Lead Free
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