Rohm Semiconductor RGTH80TS65DGC11
- Part Number:
- RGTH80TS65DGC11
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3587240-RGTH80TS65DGC11
- Description:
- IGBT 650V 70A 234W TO-247N
- ECAD Model:
-
- Datasheet:
- RGTH80TS65DGC11
Rohm Semiconductor RGTH80TS65DGC11 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor RGTH80TS65DGC11.
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight38.000013g
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- Published2014
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation234W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max234W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)650V
- Max Collector Current70A
- Reverse Recovery Time58 ns
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.6V
- Turn On Time84 ns
- Test Condition400V, 40A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 40A
- Continuous Collector Current40A
- Turn Off Time-Nom (toff)194 ns
- IGBT TypeTrench Field Stop
- Gate Charge79nC
- Current - Collector Pulsed (Icm)160A
- Td (on/off) @ 25°C34ns/120ns
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
RGTH80TS65DGC11 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet RGTH80TS65DGC11 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RGTH80TS65DGC11. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet RGTH80TS65DGC11 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RGTH80TS65DGC11. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RGTH80TS65DGC11 More Descriptions
Trans IGBT Chip N-CH 650V 70A 3-Pin TO-247N Tube
Igbt, Single, 650V, 70A, To-247N-3; Dc Collector Current:70A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:234W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247N; No. Of Pins:3Pins; Rohs Compliant: Yes |Rohm RGTH80TS65DGC11
IGBT TRNCH FIELD 650V 70A TO247N
Igbt, Single, 650V, 70A, To-247N-3; Dc Collector Current:70A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:234W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247N; No. Of Pins:3Pins; Rohs Compliant: Yes |Rohm RGTH80TS65DGC11
IGBT TRNCH FIELD 650V 70A TO247N
The three parts on the right have similar specifications to RGTH80TS65DGC11.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsElement ConfigurationInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcContinuous Collector CurrentTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CREACH SVHCRoHS StatusView Compare
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RGTH80TS65DGC1117 WeeksThrough HoleThrough HoleTO-247-3338.000013gSILICON-40°C~175°C TJTube2014yesActive1 (Unlimited)3EAR99234WNOT SPECIFIEDNOT SPECIFIED1SingleStandard234WPOWER CONTROLN-CHANNEL650V70A58 ns650V1.6V84 ns400V, 40A, 10 Ω, 15V2.1V @ 15V, 40A40A194 nsTrench Field Stop79nC160A34ns/120nsUnknownROHS3 Compliant- -
17 WeeksThrough HoleThrough HoleTO-247-3338.000013gSILICON-40°C~175°C TJTube2014yesActive1 (Unlimited)3EAR99144WNOT SPECIFIEDNOT SPECIFIED1SingleStandard144WPOWER CONTROLN-CHANNEL650V40A58 ns650V1.6V47 ns400V, 20A, 10 Ω, 15V2.1V @ 15V, 20A20A141 nsTrench Field Stop40nC80A22ns/73nsUnknownROHS3 Compliant
-
17 WeeksThrough HoleThrough HoleTO-247-33-SILICON-40°C~175°C TJTube2014yesActive1 (Unlimited)3EAR99194WNOT SPECIFIEDNOT SPECIFIED1SingleStandard194WPOWER CONTROLN-CHANNEL650V58A58 ns650V1.6V67 ns400V, 30A, 10 Ω, 15V2.1V @ 15V, 30A30A179 nsTrench Field Stop58nC120A27ns/105nsUnknownROHS3 Compliant
-
17 WeeksThrough HoleThrough HoleTO-247-3338.000013gSILICON-40°C~175°C TJTube2014yesActive1 (Unlimited)3EAR99174WNOT SPECIFIEDNOT SPECIFIED1SingleStandard174WPOWER CONTROLN-CHANNEL650V50A-650V1.6V65 ns400V, 25A, 10 Ω, 15V2.1V @ 15V, 25A25A172 nsTrench Field Stop49nC100A27ns/94nsUnknownROHS3 Compliant
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