Rohm Semiconductor RGTH00TS65GC11
- Part Number:
- RGTH00TS65GC11
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2854560-RGTH00TS65GC11
- Description:
- IGBT 650V 85A 277W TO-247N
- Datasheet:
- RGTH00TS65GC11
Rohm Semiconductor RGTH00TS65GC11 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor RGTH00TS65GC11.
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight38.000013g
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- Published2014
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation277W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max277W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)650V
- Max Collector Current85A
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.6V
- Turn On Time102 ns
- Test Condition400V, 50A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
- Continuous Collector Current50A
- Turn Off Time-Nom (toff)221 ns
- IGBT TypeTrench Field Stop
- Gate Charge94nC
- Current - Collector Pulsed (Icm)200A
- Td (on/off) @ 25°C39ns/143ns
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
RGTH00TS65GC11 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet RGTH00TS65GC11 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RGTH00TS65GC11. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet RGTH00TS65GC11 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RGTH00TS65GC11. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RGTH00TS65GC11 More Descriptions
Trans IGBT Chip N-CH 650V 85A 3-Pin TO-247N Tube
Igbt, Single, 650V, 85A, To-247N-3; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:277W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247N; No. Of Pins:3Pins; Rohs Compliant: Yes |Rohm RGTH00TS65GC11
IGBT TRNCH FIELD 650V 85A TO247N
Igbt, Single, 650V, 85A, To-247N-3; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:277W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247N; No. Of Pins:3Pins; Rohs Compliant: Yes |Rohm RGTH00TS65GC11
IGBT TRNCH FIELD 650V 85A TO247N
The three parts on the right have similar specifications to RGTH00TS65GC11.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsElement ConfigurationInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcContinuous Collector CurrentTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CREACH SVHCRoHS StatusReverse Recovery TimeView Compare
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RGTH00TS65GC1117 WeeksThrough HoleThrough HoleTO-247-3338.000013gSILICON-40°C~175°C TJTube2014yesActive1 (Unlimited)3EAR99277WNOT SPECIFIEDNOT SPECIFIED1SingleStandard277WPOWER CONTROLN-CHANNEL650V85A650V1.6V102 ns400V, 50A, 10 Ω, 15V2.1V @ 15V, 50A50A221 nsTrench Field Stop94nC200A39ns/143nsUnknownROHS3 Compliant--
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17 WeeksThrough HoleThrough HoleTO-247-3338.000013gSILICON-40°C~175°C TJTube2014yesActive1 (Unlimited)3EAR99144WNOT SPECIFIEDNOT SPECIFIED1SingleStandard144WPOWER CONTROLN-CHANNEL650V40A650V1.6V47 ns400V, 20A, 10 Ω, 15V2.1V @ 15V, 20A20A141 nsTrench Field Stop40nC80A22ns/73nsUnknownROHS3 Compliant-
-
17 WeeksThrough HoleThrough HoleTO-247-3338.000013gSILICON-40°C~175°C TJTube2014yesActive1 (Unlimited)3EAR99277WNOT SPECIFIEDNOT SPECIFIED1SingleStandard277WPOWER CONTROLN-CHANNEL650V85A650V1.6V102 ns400V, 50A, 10 Ω, 15V2.1V @ 15V, 50A50A221 nsTrench Field Stop94nC200A39ns/143nsUnknownROHS3 Compliant54 ns
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17 WeeksThrough HoleThrough HoleTO-247-3338.000013gSILICON-40°C~175°C TJTube2014yesActive1 (Unlimited)3EAR99174WNOT SPECIFIEDNOT SPECIFIED1SingleStandard174WPOWER CONTROLN-CHANNEL650V50A650V1.6V65 ns400V, 25A, 10 Ω, 15V2.1V @ 15V, 25A25A172 nsTrench Field Stop49nC100A27ns/94nsUnknownROHS3 Compliant58 ns
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