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RFD16N05LSM9A

Fairchild/ON Semiconductor RFD16N05LSM9A

Part Number:
RFD16N05LSM9A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478352-RFD16N05LSM9A
Description:
MOSFET N-CH 50V 16A TO-252AA
ECAD Model:
Datasheet:
RFD16N05LSM9A

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Specifications
Fairchild/ON Semiconductor RFD16N05LSM9A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor RFD16N05LSM9A.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2003
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    47MOhm
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    MEGAFET
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    50V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    16A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    60W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    60W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    47m Ω @ 16A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250mA
  • Current - Continuous Drain (Id) @ 25°C
    16A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    80nC @ 10V
  • Rise Time
    30ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    14 ns
  • Turn-Off Delay Time
    42 ns
  • Continuous Drain Current (ID)
    16mA
  • Threshold Voltage
    2V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    50V
  • Pulsed Drain Current-Max (IDM)
    45A
  • Nominal Vgs
    2 V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
RFD16N05LSM9A Description
The RFD16N05LSM9A is a Mega FET-based N-channel logic level power MOSFET. This method, which employs feature sizes that are similar to those found in LSI integrated circuits, allows for the most efficient use of silicon, resulting in exceptional performance. It's intended for use with logic level (5V) driving sources in programmable controllers, switching regulators, switching converters, and bipolar transistor emitter switches. This is achieved because to a unique gate oxide design that allows for full rated conductance at gate biases of 3 to 5V, allowing for genuine on-off power management straight from logic circuit supply voltages. TA09871 was the previous developmental type.

RFD16N05LSM9A Features
UIS SOA rating curve (single pulse)
Can be driven directly from CMOS, NMOS, and TTL circuits
SOA is power dissipation limited
Nanosecond switching speeds
Linear transfer characteristics
High input impedance
Majority carrier device

RFD16N05LSM9A Applications
Power Management
Motor Drive & Control
Industrial
RFD16N05LSM9A More Descriptions
N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA
N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ
MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance
Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
Product Comparison
The three parts on the right have similar specifications to RFD16N05LSM9A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Series
    HTS Code
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • RFD16N05LSM9A
    RFD16N05LSM9A
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2003
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    47MOhm
    Tin (Sn)
    MEGAFET
    FET General Purpose Power
    50V
    MOSFET (Metal Oxide)
    GULL WING
    16A
    R-PSSO-G2
    1
    60W Tc
    Single
    ENHANCEMENT MODE
    60W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    47m Ω @ 16A, 5V
    2V @ 250mA
    16A Tc
    80nC @ 10V
    30ns
    4V 5V
    ±10V
    14 ns
    42 ns
    16mA
    2V
    TO-252AA
    10V
    50V
    45A
    2 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • RFD12N06RLE
    RFD12N06RLE
    Fairchild/ON Semiconductor
    -
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    2002
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    Tin (Sn)
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    40W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    63m Ω @ 18A, 10V
    3V @ 250μA
    18A Tc
    15nC @ 10V
    -
    4.5V 10V
    ±16V
    -
    -
    -
    -
    TO-252AA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    YES
    UltraFET™
    8541.29.00.95
    SINGLE
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    485pF @ 25V
    60V
    18A
    0.075Ohm
    60V
    RFD16N05LSM9A vs RFD12N06RLE
  • RFD16N05
    RFD16N05
    Fairchild/ON Semiconductor
    -
    -
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    Tin (Sn)
    MEGAFET
    FET General Purpose Power
    50V
    MOSFET (Metal Oxide)
    GULL WING
    16A
    R-PSSO-G2
    1
    72W Tc
    Single
    ENHANCEMENT MODE
    72W
    DRAIN
    -
    N-Channel
    SWITCHING
    47m Ω @ 16A, 10V
    4V @ 250μA
    16A Tc
    80nC @ 20V
    30ns
    10V
    ±20V
    30 ns
    55 ns
    16A
    -
    TO-252AA
    20V
    50V
    45A
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    Not Qualified
    -
    900pF @ 25V
    -
    -
    0.056Ohm
    -
    RFD16N05LSM9A vs RFD16N05
  • RFD14N05SM9A
    RFD14N05SM9A
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2004
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    100mOhm
    Tin (Sn)
    -
    FET General Purpose Power
    50V
    MOSFET (Metal Oxide)
    GULL WING
    14A
    R-PSSO-G2
    1
    48W Tc
    Single
    ENHANCEMENT MODE
    48W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    100m Ω @ 14A, 10V
    4V @ 250μA
    14A Tc
    40nC @ 20V
    26ns
    10V
    ±20V
    17 ns
    45 ns
    14mA
    4V
    TO-252AA
    20V
    50V
    -
    4 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    570pF @ 25V
    -
    -
    -
    -
    RFD16N05LSM9A vs RFD14N05SM9A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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