Fairchild/ON Semiconductor RFD12N06RLE

Name: RFD12N06RLE
Brand: Fairchild/ON Semiconductor
SKU: 2489693-RFD12N06RLE
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: RFD12N06RLE

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2489693-RFD12N06RLE

Description:: MOSFET N-CH 60V 18A IPAK

ECAD Model:

Datasheet:: RFD12N06RLE(SM), RFP12N06RLE

Specifications

Fairchild/ON Semiconductor RFD12N06RLE technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor RFD12N06RLE.

Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
UltraFET™
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
40W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
63m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
485pF @ 25V
Current - Continuous Drain (Id) @ 25°C
18A Tc
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
18A
Drain-source On Resistance-Max
0.075Ohm
DS Breakdown Voltage-Min
60V

Description

RFD12N06RLE Description
RFD12N06RLE is a type of N-Channel, logic-level UltraFET power MOSFET provided by ON Semiconductor. It is able to offer ultra-low on-state resistance, temperature compensated PSPICE? and SABER? electrical models, and spice and SABER? thermal impedance models. RFD12N06RLE is well suited for a wide range of applications.

RFD12N06RLE Features
Ultra-low on-state resistance
Available in the TO-251AA package
Temperature compensating PSPICE? and SABER? electrical model
Spice and SABER? thermal impedance models

RFD12N06RLE Applications
Motor drives

RFD12N06RLE More Descriptions

Trans MOSFET N-CH 60V 18A 3-Pin (3 Tab) TO-251 Rail
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
PWR MOS 60V/12A/0.135 OHM N-CH LOGIC-LVL ESD RATED TO-251A
MOSFETs 60V/12a/0.135Ohm NCh Logic Level
MOSFET, N, LOGIC, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:17A; Resistance, Rds On:0.071ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:I-PAK; Termination Type:Through Hole; Operating Temperature Range:-55°C to 175°C; Alternate Case Style:I-PAK; Current, Idm Pulse:20A; Power Dissipation:40W; Power, Pd:49W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Max:2V

Product Comparison

The three parts on the right have similar specifications to RFD12N06RLE.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Pin Count

RoHS Status

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Resistance

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Contact Plating

View Compare
RFD12N06RLE

Fairchild/ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

YES

SILICON

-55°C~175°C TJ

Tube

UltraFET™

2002

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

Tin (Sn)

8541.29.00.95

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

40W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

63m Ω @ 18A, 10V

3V @ 250μA

485pF @ 25V

18A Tc

15nC @ 10V

60V

4.5V 10V

±16V

TO-252AA

18A

0.075Ohm

60V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
RFD14N05L

Fairchild/ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

SILICON

-55°C~175°C TJ

Tube

-

-

e0

yes

Obsolete

1 (Unlimited)

3

-

TIN LEAD

-

-

MOSFET (Metal Oxide)

SINGLE

-

NOT SPECIFIED

-

NOT SPECIFIED

R-PSIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

48W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

100m Ω @ 14A, 5V

2V @ 250μA

670pF @ 25V

14A Tc

40nC @ 10V

50V

5V

±10V

-

14A

0.1Ohm

50V

3

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RFD12N06RLE vs RFD14N05L
RFD14N05SM9A

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

-

2004

e3

yes

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

-

-

-

R-PSSO-G2

-

1

-

48W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

100m Ω @ 14A, 10V

4V @ 250μA

570pF @ 25V

14A Tc

40nC @ 20V

-

10V

±20V

TO-252AA

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Surface Mount

3

260.37mg

100mOhm

50V

14A

Single

48W

14 ns

26ns

17 ns

45 ns

14mA

4V

20V

50V

4 V

2.39mm

6.73mm

6.22mm

No SVHC

No

Lead Free

-

RFD12N06RLE vs RFD14N05SM9A
RFD12N06RLESM9A

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

UltraFET™

2002

e3

yes

Active

1 (Unlimited)

2

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

-

-

-

R-PSSO-G2

-

1

-

49W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

63m Ω @ 18A, 10V

3V @ 250μA

485pF @ 25V

18A Tc

15nC @ 10V

-

4.5V 10V

±16V

TO-252AA

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Surface Mount

3

260.37mg

71MOhm

60V

17A

Single

49W

13 ns

34ns

50 ns

41 ns

17mA

3V

16V

60V

-

2.39mm

6.73mm

6.22mm

Unknown

No

Lead Free

Tin

RFD12N06RLE vs RFD12N06RLESM9A