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PMV65XPEAR

Nexperia USA Inc. PMV65XPEAR

Part Number:
PMV65XPEAR
Manufacturer:
Nexperia USA Inc.
Ventron No:
2478971-PMV65XPEAR
Description:
MOSFET P-CH 20V SOT23
ECAD Model:
Datasheet:
PMV65XPEAR

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Specifications
Nexperia USA Inc. PMV65XPEAR technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMV65XPEAR.
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2014
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • Reference Standard
    AEC-Q101; IEC-60134
  • JESD-30 Code
    R-PDSO-G3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    480mW Ta 6.25W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    78m Ω @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id
    1.25V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    618pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    2.8A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    9nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Continuous Drain Current (ID)
    2.8A
  • JEDEC-95 Code
    TO-236AB
  • Drain-source On Resistance-Max
    0.078Ohm
  • DS Breakdown Voltage-Min
    20V
  • RoHS Status
    ROHS3 Compliant
Description
PMV65XPEAR Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 618pF @ 10V.This device has a continuous drain current (ID) of [2.8A], which is its maximum continuous current.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).

PMV65XPEAR Features
a continuous drain current (ID) of 2.8A
a 20V drain to source voltage (Vdss)


PMV65XPEAR Applications
There are a lot of Nexperia USA Inc.
PMV65XPEAR applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
PMV65XPEAR More Descriptions
Trans MOSFET P-CH 20V 2.8A Automotive AEC-Q101 3-Pin SOT-23 T/R
MOSFET, P-CH, -20V, -2.8A, TO236AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.8A; Source Voltage Vds:-20V; On Resistance
Small Signal Field-Effect Transistor, 2.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P-CH, -20V, -2.8A, TO236AB; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.8A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.067ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 480mW; Transistor Case Style: TO-236AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Product Comparison
The three parts on the right have similar specifications to PMV65XPEAR.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Reference Standard
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    RoHS Status
    Supplier Device Package
    Series
    Additional Feature
    Surface Mount
    Number of Pins
    ECCN Code
    HTS Code
    Qualification Status
    Power Dissipation
    View Compare
  • PMV65XPEAR
    PMV65XPEAR
    Nexperia USA Inc.
    4 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2014
    e3
    Active
    1 (Unlimited)
    3
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    3
    AEC-Q101; IEC-60134
    R-PDSO-G3
    1
    SINGLE WITH BUILT-IN DIODE
    480mW Ta 6.25W Tc
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    78m Ω @ 2.8A, 4.5V
    1.25V @ 250μA
    618pF @ 10V
    2.8A Ta
    9nC @ 4.5V
    20V
    2.5V 4.5V
    ±12V
    2.8A
    TO-236AB
    0.078Ohm
    20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PMV65UN,215
    PMV65UN,215
    NXP USA Inc.
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    310mW Ta 2.17W Tc
    -
    N-Channel
    -
    76mOhm @ 2A, 4.5V
    1V @ 250μA
    183pF @ 10V
    2.2A Ta
    3.9nC @ 4.5V
    20V
    1.8V 4.5V
    ±8V
    -
    -
    -
    -
    ROHS3 Compliant
    TO-236AB (SOT23)
    -
    -
    -
    -
    -
    -
    -
    -
    PMV65XPEAR vs PMV65UN,215
  • PMV65ENEAR
    PMV65ENEAR
    Nexperia USA Inc.
    4 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    -
    Active
    1 (Unlimited)
    3
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    3
    AEC-Q101; IEC-60134
    R-PDSO-G3
    1
    SINGLE WITH BUILT-IN DIODE
    490mW Ta 6.25W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    75m Ω @ 2.7A, 10V
    2.5V @ 250μA
    160pF @ 20V
    2.7A Ta
    6nC @ 10V
    40V
    4.5V 10V
    ±20V
    2.7A
    TO-236AB
    0.075Ohm
    40V
    ROHS3 Compliant
    -
    Automotive, AEC-Q101
    LOGIC LEVEL COMPATIBLE
    -
    -
    -
    -
    -
    -
    PMV65XPEAR vs PMV65ENEAR
  • PMV65XP,215
    PMV65XP,215
    Nexperia USA Inc.
    4 Weeks
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e3
    Active
    1 (Unlimited)
    3
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    -
    -
    1
    SINGLE WITH BUILT-IN DIODE
    480mW Ta
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    74m Ω @ 2.8A, 4.5V
    900mV @ 250μA
    744pF @ 20V
    2.8A Ta
    7.7nC @ 4.5V
    20V
    1.8V 4.5V
    ±12V
    -3.9A
    -
    0.076Ohm
    20V
    ROHS3 Compliant
    -
    -
    LOW THRESHOLD
    YES
    3
    EAR99
    8541.29.00.75
    Not Qualified
    1.92W
    PMV65XPEAR vs PMV65XP,215
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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