Nexperia USA Inc. PMV65XP,215

Name: PMV65XP,215
Brand: Nexperia USA Inc.
SKU: 2478625-PMV65XP,215
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: PMV65XP,215

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2478625-PMV65XP,215

Description:: MOSFET P-CH 20V 2.8A SOT-23

ECAD Model:

Datasheet:: PMV65XP,215

Specifications

Nexperia USA Inc. PMV65XP,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMV65XP,215.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW THRESHOLD
HTS Code
8541.29.00.75
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
480mW Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.92W
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
74m Ω @ 2.8A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
744pF @ 20V
Current - Continuous Drain (Id) @ 25°C
2.8A Ta
Gate Charge (Qg) (Max) @ Vgs
7.7nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±12V
Continuous Drain Current (ID)
-3.9A
Drain-source On Resistance-Max
0.076Ohm
DS Breakdown Voltage-Min
20V
RoHS Status
ROHS3 Compliant

Description

PMV65XP,215 Description
A high-performance, low-threshold N-channel MOSFET transistor made by Nexperia USA Inc. called PMV65XP,215 is intended for usage in a wide range of applications. It is a component of the X-PhD technology platform from Nexperia, which offers superior performance and dependability compared to conventional MOSFET devices. The PMV65XP,215 MOSFET is designed for use in portable electronics, power management systems, and other applications where high efficiency, low power consumption, and tiny form factor are essential. It comes in a small SOT-23 surface-mount package. It is the best choice for high-speed switching and high-frequency applications because it has a low on-state resistance, quick switching times, and great thermal performance. The PMV65XP,215 MOSFET is also RoHS compliant, making it safe to use in a variety of applications and environmentally beneficial.

PMV65XP,215 Features
RoHS compliant
Small form factor
X-PhD technology
High-speed switching
Low threshold voltage
Low on-state resistance
High-frequency operation

PMV65XP,215 Application
Motor Control
Portable Devices
Lighting Systems
Consumer Electronics
Automotive Electronics
Industrial Applications
Power Management Systems

PMV65XP,215 More Descriptions

20V 2.8A 74m¦¸@4.5V,2.8A 480mW 900mV@250¦ÌA P Channel SOT-23(SOT-23-3) MOSFETs ROHS
Transistor MOSFET P-CH 20V 3.9A 3-Pin TO-236AB T/R
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET P-CH 20V 3.9A SOT-23; Transistor Polarity:P Channel; On State Resistance:76mohm; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; Case Style:SOT-23; Cont Current Id:-2.8A; Termination Type:SMD; ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 4.3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 58 / Gate-Source Voltage V = 12 / Fall Time ns = 68 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 135 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 480

Product Comparison

The three parts on the right have similar specifications to PMV65XP,215.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Supplier Device Package

Mount

Resistance

Reference Standard

JESD-30 Code

JEDEC-95 Code

View Compare
PMV65XP,215

Nexperia USA Inc.

4 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2011

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

LOW THRESHOLD

8541.29.00.75

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

480mW Ta

ENHANCEMENT MODE

1.92W

P-Channel

SWITCHING

74m Ω @ 2.8A, 4.5V

900mV @ 250μA

744pF @ 20V

2.8A Ta

7.7nC @ 4.5V

20V

1.8V 4.5V

±12V

-3.9A

0.076Ohm

20V

ROHS3 Compliant

-

-

-

-

-

-

-
PMV65UN,215

NXP USA Inc.

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

310mW Ta 2.17W Tc

-

-

N-Channel

-

76mOhm @ 2A, 4.5V

1V @ 250μA

183pF @ 10V

2.2A Ta

3.9nC @ 4.5V

20V

1.8V 4.5V

±8V

-

-

-

ROHS3 Compliant

TO-236AB (SOT23)

-

-

-

-

-

PMV65XP,215 vs PMV65UN,215
PMV65XPER

Nexperia USA Inc.

4 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2014

-

Active

1 (Unlimited)

3

-

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

3

-

1

SINGLE WITH BUILT-IN DIODE

480mW Ta 6.25W Tc

ENHANCEMENT MODE

-

P-Channel

SWITCHING

78m Ω @ 2.8A, 4.5V

1.25V @ 250μA

618pF @ 10V

2.8A Ta

9nC @ 4.5V

20V

2.5V 4.5V

±12V

2.8A

-

20V

ROHS3 Compliant

-

Surface Mount

67mOhm

AEC-Q101; IEC-60134

R-PDSO-G3

TO-236AB

PMV65XP,215 vs PMV65XPER
PMV65XPEAR

Nexperia USA Inc.

4 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2014

e3

Active

1 (Unlimited)

3

-

Tin (Sn)

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

-

1

SINGLE WITH BUILT-IN DIODE

480mW Ta 6.25W Tc

ENHANCEMENT MODE

-

P-Channel

SWITCHING

78m Ω @ 2.8A, 4.5V

1.25V @ 250μA

618pF @ 10V

2.8A Ta

9nC @ 4.5V

20V

2.5V 4.5V

±12V

2.8A

0.078Ohm

20V

ROHS3 Compliant

-

Surface Mount

-

AEC-Q101; IEC-60134

R-PDSO-G3

TO-236AB

PMV65XP,215 vs PMV65XPEAR