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PMV45EN2R

Nexperia USA Inc. PMV45EN2R

Part Number:
PMV45EN2R
Manufacturer:
Nexperia USA Inc.
Ventron No:
2477991-PMV45EN2R
Description:
MOSFET N-CH 30V SOT23
ECAD Model:
Datasheet:
PMV45EN2R

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Specifications
Nexperia USA Inc. PMV45EN2R technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMV45EN2R.
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    1997
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Resistance
    35mOhm
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • Reference Standard
    IEC-60134
  • JESD-30 Code
    R-PDSO-G3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    510mW Ta 5W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    42m Ω @ 4.1A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    209pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    4.1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    6.3nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    4.1A
  • JEDEC-95 Code
    TO-236AB
  • DS Breakdown Voltage-Min
    30V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PMV45EN2R Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 209pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4.1A. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

PMV45EN2R Features
a continuous drain current (ID) of 4.1A
a 30V drain to source voltage (Vdss)


PMV45EN2R Applications
There are a lot of Nexperia USA Inc.
PMV45EN2R applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
PMV45EN2R More Descriptions
PMV45EN2R Series 30 V 5000 mW 6.3 nC SMT N-Channel TrenchMOS FET - SOT-23
MOSFET, N-CH, 30V, 5.1A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Source Voltage Vds:30V; On Resistance
Small Signal Field-Effect Transistor, 4.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Product Comparison
The three parts on the right have similar specifications to PMV45EN2R.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Resistance
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    Reference Standard
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    JEDEC-95 Code
    DS Breakdown Voltage-Min
    RoHS Status
    Lead Free
    Contact Plating
    Surface Mount
    Number of Pins
    JESD-609 Code
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Radiation Hardening
    Series
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Drain Current-Max (Abs) (ID)
    Terminal Finish
    Number of Channels
    Threshold Voltage
    Max Junction Temperature (Tj)
    Ambient Temperature Range High
    Height
    View Compare
  • PMV45EN2R
    PMV45EN2R
    Nexperia USA Inc.
    4 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    1997
    Active
    1 (Unlimited)
    3
    35mOhm
    LOGIC LEVEL COMPATIBLE
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    IEC-60134
    R-PDSO-G3
    1
    SINGLE WITH BUILT-IN DIODE
    510mW Ta 5W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    42m Ω @ 4.1A, 10V
    2V @ 250μA
    209pF @ 15V
    4.1A Ta
    6.3nC @ 10V
    30V
    4.5V 10V
    ±20V
    4.1A
    TO-236AB
    30V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PMV48XP,215
    PMV48XP,215
    Nexperia USA Inc.
    4 Weeks
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2010
    Active
    1 (Unlimited)
    3
    -
    LOGIC LEVEL COMPATIBLE
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    -
    -
    1
    SINGLE WITH BUILT-IN DIODE
    510mW Ta
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    55m Ω @ 2.4A, 4.5V
    1.25V @ 250μA
    1000pF @ 10V
    3.5A Ta
    11nC @ 4.5V
    20V
    2.5V 4.5V
    ±12V
    3.5A
    -
    -
    ROHS3 Compliant
    Lead Free
    Tin
    YES
    3
    e3
    510mW
    11 ns
    13ns
    23 ns
    61 ns
    12V
    -20V
    0.055Ohm
    -20V
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PMV45EN2R vs PMV48XP,215
  • PMV450ENEAR
    PMV450ENEAR
    Nexperia USA Inc.
    4 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    3
    -
    LOGIC LEVEL COMPATIBLE
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    AEC-Q101; IEC-60134
    R-PDSO-G3
    1
    SINGLE WITH BUILT-IN DIODE
    323mW Ta 554mW Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    380m Ω @ 900mA, 10V
    2.7V @ 250μA
    101pF @ 30V
    800mA Ta
    3.6nC @ 10V
    60V
    4.5V 10V
    ±20V
    800mA
    TO-236AB
    60V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    0.38Ohm
    -
    -
    Automotive, AEC-Q101
    NOT SPECIFIED
    NOT SPECIFIED
    0.8A
    -
    -
    -
    -
    -
    -
    PMV45EN2R vs PMV450ENEAR
  • PMV40UN2R
    PMV40UN2R
    Nexperia USA Inc.
    4 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    1997
    Active
    1 (Unlimited)
    3
    36mOhm
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    -
    R-PDSO-G3
    1
    SINGLE WITH BUILT-IN DIODE
    490mW Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    44m Ω @ 3.7A, 4.5V
    900mV @ 250μA
    635pF @ 15V
    3.7A Ta
    12nC @ 4.5V
    -
    1.8V 4.5V
    ±12V
    3.7A
    TO-236AB
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    e3
    490mW
    9 ns
    -
    -
    34 ns
    12V
    -
    -
    30V
    -
    -
    260
    30
    -
    Tin (Sn)
    1
    400mV
    150°C
    150°C
    1.1mm
    PMV45EN2R vs PMV40UN2R
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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