PMCM4401VNEAZ

Nexperia USA Inc. PMCM4401VNEAZ

Part Number:
PMCM4401VNEAZ
Manufacturer:
Nexperia USA Inc.
Ventron No:
3070356-PMCM4401VNEAZ
Description:
MOSFET N-CH 12V WLCSP
ECAD Model:
Datasheet:
PMCM4401VNEAZ

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Specifications
Nexperia USA Inc. PMCM4401VNEAZ technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMCM4401VNEAZ.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    4-XFBGA, WLCSP
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    BALL
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Reference Standard
    IEC-60134
  • JESD-30 Code
    S-PBGA-B4
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    400mW Ta 12.5W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    42m Ω @ 3A, 4.5V
  • Vgs(th) (Max) @ Id
    900mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    335pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    4.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    9nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    12V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.5V 4.5V
  • Vgs (Max)
    ±8V
  • Continuous Drain Current (ID)
    4.7A
  • Drain-source On Resistance-Max
    0.054Ohm
  • DS Breakdown Voltage-Min
    12V
  • RoHS Status
    ROHS3 Compliant
Description
PMCM4401VNEAZ Overview
A device's maximum input capacitance is 335pF @ 6V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.For normal operation, maintain the DS breakdown voltage above 12V.To operate this transistor, you need to apply a 12V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.

PMCM4401VNEAZ Features
a continuous drain current (ID) of 4.7A
a 12V drain to source voltage (Vdss)


PMCM4401VNEAZ Applications
There are a lot of Nexperia USA Inc.
PMCM4401VNEAZ applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
PMCM4401VNEAZ More Descriptions
PMCM4401VNE - 12V, N-channel Trench MOSFET
Trans MOSFET N-CH 12V 4.7A 4-Pin WLCSP
Small Signal Field-Effect Transistor, 4.7A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 12V, 4.7A, WLCSP-4; Transistor Polarity:N Channel; Continuous Drain Current Id:4.7A; Source Voltage Vds:12V; On Resistance
REEL 7"" Q1/T1 *STANDARD MARK CIRCUIT ELEMENT LPQ
PMCM4401VNE/NONE/REEL 7" Q1/T1
Product Comparison
The three parts on the right have similar specifications to PMCM4401VNEAZ.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Reference Standard
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    RoHS Status
    Pin Count
    Surface Mount
    Drain Current-Max (Abs) (ID)
    View Compare
  • PMCM4401VNEAZ
    PMCM4401VNEAZ
    13 Weeks
    Surface Mount
    Surface Mount
    4-XFBGA, WLCSP
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    Active
    1 (Unlimited)
    4
    MOSFET (Metal Oxide)
    BOTTOM
    BALL
    NOT SPECIFIED
    NOT SPECIFIED
    IEC-60134
    S-PBGA-B4
    1
    SINGLE WITH BUILT-IN DIODE
    400mW Ta 12.5W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    42m Ω @ 3A, 4.5V
    900mV @ 250μA
    335pF @ 6V
    4.7A Ta
    9nC @ 4.5V
    12V
    1.5V 4.5V
    ±8V
    4.7A
    0.054Ohm
    12V
    ROHS3 Compliant
    -
    -
    -
    -
  • PMCM440VNEZ
    13 Weeks
    Surface Mount
    Surface Mount
    4-XFBGA, WLCSP
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2015
    Active
    1 (Unlimited)
    4
    MOSFET (Metal Oxide)
    BOTTOM
    BALL
    NOT SPECIFIED
    NOT SPECIFIED
    IEC-60134
    S-PBGA-B4
    1
    SINGLE WITH BUILT-IN DIODE
    400mW Ta 12.5W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    67m Ω @ 3A, 4.5V
    900mV @ 250μA
    360pF @ 6V
    3.9A Ta
    8.2nC @ 4.5V
    12V
    4.5V
    ±8V
    3.9A
    0.088Ohm
    12V
    ROHS3 Compliant
    4
    -
    -
  • PMCM6501VNEZ
    13 Weeks
    Surface Mount
    Surface Mount
    6-XFBGA, WLCSP
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    Active
    1 (Unlimited)
    6
    MOSFET (Metal Oxide)
    BOTTOM
    BALL
    NOT SPECIFIED
    NOT SPECIFIED
    IEC-60134
    R-PBGA-B6
    1
    SINGLE WITH BUILT-IN DIODE
    556mW Ta 12.5W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    18m Ω @ 3A, 4.5V
    900mV @ 250μA
    920pF @ 6V
    7.3A Ta
    24nC @ 4.5V
    12V
    1.5V 4.5V
    ±8V
    7.3A
    0.022Ohm
    12V
    ROHS3 Compliant
    -
    -
    -
  • PMCM4401UPEZ
    13 Weeks
    -
    Surface Mount
    4-XFBGA, WLCSP
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    Active
    1 (Unlimited)
    4
    MOSFET (Metal Oxide)
    BOTTOM
    BALL
    -
    -
    IEC-60134
    S-PBGA-B4
    1
    SINGLE WITH BUILT-IN DIODE
    400mW Ta 12.5W Tc
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    95m Ω @ 3A, 4.5V
    900mV @ 250μA
    420pF @ 10V
    4A Ta
    10nC @ 4.5V
    20V
    1.8V 4.5V
    ±8V
    -
    0.095Ohm
    20V
    ROHS3 Compliant
    -
    YES
    3.2A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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