Nexperia USA Inc. PMCM4401VNEAZ
- Part Number:
- PMCM4401VNEAZ
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3070356-PMCM4401VNEAZ
- Description:
- MOSFET N-CH 12V WLCSP
- Datasheet:
- PMCM4401VNEAZ
Nexperia USA Inc. PMCM4401VNEAZ technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMCM4401VNEAZ.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case4-XFBGA, WLCSP
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormBALL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Reference StandardIEC-60134
- JESD-30 CodeS-PBGA-B4
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max400mW Ta 12.5W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs42m Ω @ 3A, 4.5V
- Vgs(th) (Max) @ Id900mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds335pF @ 6V
- Current - Continuous Drain (Id) @ 25°C4.7A Ta
- Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
- Drain to Source Voltage (Vdss)12V
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4.5V
- Vgs (Max)±8V
- Continuous Drain Current (ID)4.7A
- Drain-source On Resistance-Max0.054Ohm
- DS Breakdown Voltage-Min12V
- RoHS StatusROHS3 Compliant
PMCM4401VNEAZ Overview
A device's maximum input capacitance is 335pF @ 6V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.For normal operation, maintain the DS breakdown voltage above 12V.To operate this transistor, you need to apply a 12V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.
PMCM4401VNEAZ Features
a continuous drain current (ID) of 4.7A
a 12V drain to source voltage (Vdss)
PMCM4401VNEAZ Applications
There are a lot of Nexperia USA Inc.
PMCM4401VNEAZ applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 335pF @ 6V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.For normal operation, maintain the DS breakdown voltage above 12V.To operate this transistor, you need to apply a 12V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.
PMCM4401VNEAZ Features
a continuous drain current (ID) of 4.7A
a 12V drain to source voltage (Vdss)
PMCM4401VNEAZ Applications
There are a lot of Nexperia USA Inc.
PMCM4401VNEAZ applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
PMCM4401VNEAZ More Descriptions
PMCM4401VNE - 12V, N-channel Trench MOSFET
Trans MOSFET N-CH 12V 4.7A 4-Pin WLCSP
Small Signal Field-Effect Transistor, 4.7A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 12V, 4.7A, WLCSP-4; Transistor Polarity:N Channel; Continuous Drain Current Id:4.7A; Source Voltage Vds:12V; On Resistance
REEL 7"" Q1/T1 *STANDARD MARK CIRCUIT ELEMENT LPQ
PMCM4401VNE/NONE/REEL 7" Q1/T1
Trans MOSFET N-CH 12V 4.7A 4-Pin WLCSP
Small Signal Field-Effect Transistor, 4.7A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 12V, 4.7A, WLCSP-4; Transistor Polarity:N Channel; Continuous Drain Current Id:4.7A; Source Voltage Vds:12V; On Resistance
REEL 7"" Q1/T1 *STANDARD MARK CIRCUIT ELEMENT LPQ
PMCM4401VNE/NONE/REEL 7" Q1/T1
The three parts on the right have similar specifications to PMCM4401VNEAZ.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusPin CountSurface MountDrain Current-Max (Abs) (ID)View Compare
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PMCM4401VNEAZ13 WeeksSurface MountSurface Mount4-XFBGA, WLCSPSILICON-55°C~150°C TJTape & Reel (TR)2015Active1 (Unlimited)4MOSFET (Metal Oxide)BOTTOMBALLNOT SPECIFIEDNOT SPECIFIEDIEC-60134S-PBGA-B41SINGLE WITH BUILT-IN DIODE400mW Ta 12.5W TcENHANCEMENT MODEN-ChannelSWITCHING42m Ω @ 3A, 4.5V900mV @ 250μA335pF @ 6V4.7A Ta9nC @ 4.5V12V1.5V 4.5V±8V4.7A0.054Ohm12VROHS3 Compliant----
-
13 WeeksSurface MountSurface Mount4-XFBGA, WLCSPSILICON-55°C~150°C TJCut Tape (CT)2015Active1 (Unlimited)4MOSFET (Metal Oxide)BOTTOMBALLNOT SPECIFIEDNOT SPECIFIEDIEC-60134S-PBGA-B41SINGLE WITH BUILT-IN DIODE400mW Ta 12.5W TcENHANCEMENT MODEN-ChannelSWITCHING67m Ω @ 3A, 4.5V900mV @ 250μA360pF @ 6V3.9A Ta8.2nC @ 4.5V12V4.5V±8V3.9A0.088Ohm12VROHS3 Compliant4--
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13 WeeksSurface MountSurface Mount6-XFBGA, WLCSPSILICON-55°C~150°C TJTape & Reel (TR)2015Active1 (Unlimited)6MOSFET (Metal Oxide)BOTTOMBALLNOT SPECIFIEDNOT SPECIFIEDIEC-60134R-PBGA-B61SINGLE WITH BUILT-IN DIODE556mW Ta 12.5W TcENHANCEMENT MODEN-ChannelSWITCHING18m Ω @ 3A, 4.5V900mV @ 250μA920pF @ 6V7.3A Ta24nC @ 4.5V12V1.5V 4.5V±8V7.3A0.022Ohm12VROHS3 Compliant---
-
13 Weeks-Surface Mount4-XFBGA, WLCSPSILICON-55°C~150°C TJTape & Reel (TR)2015Active1 (Unlimited)4MOSFET (Metal Oxide)BOTTOMBALL--IEC-60134S-PBGA-B41SINGLE WITH BUILT-IN DIODE400mW Ta 12.5W TcENHANCEMENT MODEP-ChannelSWITCHING95m Ω @ 3A, 4.5V900mV @ 250μA420pF @ 10V4A Ta10nC @ 4.5V20V1.8V 4.5V±8V-0.095Ohm20VROHS3 Compliant-YES3.2A
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