NX7002AK,215

Nexperia USA Inc. NX7002AK,215

Part Number:
NX7002AK,215
Manufacturer:
Nexperia USA Inc.
Ventron No:
2478559-NX7002AK,215
Description:
MOSFET N-CH 60V TO-236AB
ECAD Model:
Datasheet:
NX7002AK,215

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Specifications
Nexperia USA Inc. NX7002AK,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. NX7002AK,215.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    265mW Ta 1.33W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.5 Ω @ 100mA, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    17pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    190mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    0.43nC @ 4.5V
  • Rise Time
    7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    14 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    190mA
  • Gate to Source Voltage (Vgs)
    1.6V
  • Max Dual Supply Voltage
    60V
  • Drain-source On Resistance-Max
    5.2Ohm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NX7002AK,215 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 17pF @ 10V.This device has a continuous drain current (ID) of [190mA], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 1.6V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 60V.Its overall power consumption can be reduced by using drive voltage (5V 10V).

NX7002AK,215 Features
a continuous drain current (ID) of 190mA
the turn-off delay time is 20 ns


NX7002AK,215 Applications
There are a lot of Nexperia USA Inc.
NX7002AK,215 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
NX7002AK,215 More Descriptions
NEXPERIA - NX7002AK,215 - MOSFET Transistor, N Channel, 190 mA, 60 V, 3 ohm, 10 V, 1.6 V
NX7002AK Series 60 V 4.5 Ohm 265 mW 0.33 nC N-Channel TrenchMOS FET - SOT-23
NX7002AK - 60 V, single N-channel Trench MOSFET
Mosfet, Single, N Channel, 60V, 0.19A, Sot23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:190Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:265Mw Rohs Compliant: Yes |Nexperia NX7002AK,215
Small Signal Field-Effect Transistor, 0.19A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 7 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 265
Product Comparison
The three parts on the right have similar specifications to NX7002AK,215.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Series
    Additional Feature
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Configuration
    Case Connection
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Drain to Source Breakdown Voltage
    Reference Standard
    JESD-30 Code
    Drain Current-Max (Abs) (ID)
    View Compare
  • NX7002AK,215
    NX7002AK,215
    4 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    Active
    1 (Unlimited)
    3
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    1
    1
    265mW Ta 1.33W Tc
    Single
    ENHANCEMENT MODE
    6 ns
    N-Channel
    SWITCHING
    4.5 Ω @ 100mA, 10V
    2.1V @ 250μA
    17pF @ 10V
    190mA Ta
    0.43nC @ 4.5V
    7ns
    5V 10V
    ±20V
    14 ns
    20 ns
    190mA
    1.6V
    60V
    5.2Ohm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NX7002BKMBYL
    8 Weeks
    Surface Mount
    3-XFDFN
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    -
    Active
    1 (Unlimited)
    3
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    3
    1
    -
    350mW Ta 3.1W Tc
    -
    ENHANCEMENT MODE
    -
    N-Channel
    SWITCHING
    2.8 Ω @ 200mA, 10V
    2.1V @ 250μA
    23.6pF @ 10V
    350mA Ta
    1nC @ 10V
    -
    5V 10V
    ±20V
    -
    -
    350mA
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Surface Mount
    TrenchMOS™
    LOGIC LEVEL COMPATIBLE
    NOT SPECIFIED
    NOT SPECIFIED
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    60V
    60V
    -
    -
    -
    -
  • NX7002AKW,115
    4 Weeks
    Surface Mount
    SC-70, SOT-323
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    Active
    1 (Unlimited)
    3
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    1
    1
    220mW Ta 1.06W Tc
    Single
    ENHANCEMENT MODE
    6 ns
    N-Channel
    SWITCHING
    4.5 Ω @ 100mA, 10V
    2.1V @ 250μA
    17pF @ 10V
    170mA Ta
    0.43nC @ 4.5V
    7ns
    5V 10V
    ±20V
    14 ns
    20 ns
    170mA
    1.6V
    60V
    5.2Ohm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    260
    30
    -
    -
    -
    -
    60V
    -
    -
    -
  • NX7002BKWX
    4 Weeks
    Surface Mount
    SC-70, SOT-323
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    -
    Active
    1 (Unlimited)
    3
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    1
    -
    310mW Ta 1.67W Tc
    -
    ENHANCEMENT MODE
    -
    N-Channel
    SWITCHING
    2.8 Ω @ 200mA, 10V
    2.1V @ 250μA
    23.6pF @ 10V
    270mA Ta
    1nC @ 10V
    -
    5V 10V
    ±20V
    -
    -
    270mA
    -
    -
    3.2Ohm
    -
    ROHS3 Compliant
    -
    Surface Mount
    -
    LOGIC LEVEL COMPATIBLE
    NOT SPECIFIED
    NOT SPECIFIED
    SINGLE WITH BUILT-IN DIODE
    -
    60V
    60V
    -
    IEC-60134
    R-PDSO-G3
    0.24A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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