Nexperia USA Inc. NX7002AK,215
- Part Number:
- NX7002AK,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2478559-NX7002AK,215
- Description:
- MOSFET N-CH 60V TO-236AB
- Datasheet:
- NX7002AK,215
Nexperia USA Inc. NX7002AK,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. NX7002AK,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max265mW Ta 1.33W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time6 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.5 Ω @ 100mA, 10V
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds17pF @ 10V
- Current - Continuous Drain (Id) @ 25°C190mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.43nC @ 4.5V
- Rise Time7ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)14 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)190mA
- Gate to Source Voltage (Vgs)1.6V
- Max Dual Supply Voltage60V
- Drain-source On Resistance-Max5.2Ohm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NX7002AK,215 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 17pF @ 10V.This device has a continuous drain current (ID) of [190mA], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 1.6V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 60V.Its overall power consumption can be reduced by using drive voltage (5V 10V).
NX7002AK,215 Features
a continuous drain current (ID) of 190mA
the turn-off delay time is 20 ns
NX7002AK,215 Applications
There are a lot of Nexperia USA Inc.
NX7002AK,215 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 17pF @ 10V.This device has a continuous drain current (ID) of [190mA], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 1.6V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 60V.Its overall power consumption can be reduced by using drive voltage (5V 10V).
NX7002AK,215 Features
a continuous drain current (ID) of 190mA
the turn-off delay time is 20 ns
NX7002AK,215 Applications
There are a lot of Nexperia USA Inc.
NX7002AK,215 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
NX7002AK,215 More Descriptions
NEXPERIA - NX7002AK,215 - MOSFET Transistor, N Channel, 190 mA, 60 V, 3 ohm, 10 V, 1.6 V
NX7002AK Series 60 V 4.5 Ohm 265 mW 0.33 nC N-Channel TrenchMOS FET - SOT-23
NX7002AK - 60 V, single N-channel Trench MOSFET
Mosfet, Single, N Channel, 60V, 0.19A, Sot23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:190Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:265Mw Rohs Compliant: Yes |Nexperia NX7002AK,215
Small Signal Field-Effect Transistor, 0.19A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 7 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 265
NX7002AK Series 60 V 4.5 Ohm 265 mW 0.33 nC N-Channel TrenchMOS FET - SOT-23
NX7002AK - 60 V, single N-channel Trench MOSFET
Mosfet, Single, N Channel, 60V, 0.19A, Sot23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:190Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:265Mw Rohs Compliant: Yes |Nexperia NX7002AK,215
Small Signal Field-Effect Transistor, 0.19A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 7 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 265
The three parts on the right have similar specifications to NX7002AK,215.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxRadiation HardeningRoHS StatusLead FreeMountSeriesAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)ConfigurationCase ConnectionDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinDrain to Source Breakdown VoltageReference StandardJESD-30 CodeDrain Current-Max (Abs) (ID)View Compare
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NX7002AK,2154 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2013e3Active1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)DUALGULL WING311265mW Ta 1.33W TcSingleENHANCEMENT MODE6 nsN-ChannelSWITCHING4.5 Ω @ 100mA, 10V2.1V @ 250μA17pF @ 10V190mA Ta0.43nC @ 4.5V7ns5V 10V±20V14 ns20 ns190mA1.6V60V5.2OhmNoROHS3 CompliantLead Free--------------
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8 WeeksSurface Mount3-XFDFN-3SILICON-55°C~150°C TJTape & Reel (TR)2014-Active1 (Unlimited)3-MOSFET (Metal Oxide)BOTTOMNO LEAD31-350mW Ta 3.1W Tc-ENHANCEMENT MODE-N-ChannelSWITCHING2.8 Ω @ 200mA, 10V2.1V @ 250μA23.6pF @ 10V350mA Ta1nC @ 10V-5V 10V±20V--350mA----ROHS3 Compliant-Surface MountTrenchMOS™LOGIC LEVEL COMPATIBLENOT SPECIFIEDNOT SPECIFIEDSINGLE WITH BUILT-IN DIODEDRAIN60V60V----
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4 WeeksSurface MountSC-70, SOT-323YES3SILICON-55°C~150°C TJTape & Reel (TR)2012e3Active1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)DUALGULL WING311220mW Ta 1.06W TcSingleENHANCEMENT MODE6 nsN-ChannelSWITCHING4.5 Ω @ 100mA, 10V2.1V @ 250μA17pF @ 10V170mA Ta0.43nC @ 4.5V7ns5V 10V±20V14 ns20 ns170mA1.6V60V5.2OhmNoROHS3 Compliant----26030----60V---
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4 WeeksSurface MountSC-70, SOT-323--SILICON-55°C~150°C TJTape & Reel (TR)2014-Active1 (Unlimited)3-MOSFET (Metal Oxide)DUALGULL WING31-310mW Ta 1.67W Tc-ENHANCEMENT MODE-N-ChannelSWITCHING2.8 Ω @ 200mA, 10V2.1V @ 250μA23.6pF @ 10V270mA Ta1nC @ 10V-5V 10V±20V--270mA--3.2Ohm-ROHS3 Compliant-Surface Mount-LOGIC LEVEL COMPATIBLENOT SPECIFIEDNOT SPECIFIEDSINGLE WITH BUILT-IN DIODE-60V60V-IEC-60134R-PDSO-G30.24A
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