Nexperia USA Inc. NX3008NBK,215
- Part Number:
- NX3008NBK,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2478889-NX3008NBK,215
- Description:
- MOSFET N-CH 30V TO-236AB
- Datasheet:
- NX3008NBK,215
Nexperia USA Inc. NX3008NBK,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. NX3008NBK,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchMOS™
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Number of Elements1
- Power Dissipation-Max350mW Ta 1.14W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation350mW
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.4 Ω @ 350mA, 4.5V
- Vgs(th) (Max) @ Id1.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 15V
- Current - Continuous Drain (Id) @ 25°C400mA Tc
- Gate Charge (Qg) (Max) @ Vgs0.68nC @ 4.5V
- Rise Time11ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)19 ns
- Turn-Off Delay Time69 ns
- Continuous Drain Current (ID)400mA
- Gate to Source Voltage (Vgs)8V
- Max Dual Supply Voltage30V
- Drain Current-Max (Abs) (ID)0.4A
- Drain to Source Breakdown Voltage30V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
NX3008NBK,215 Overview
The maximum input capacitance of this device is 50pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 400mA.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.As shown in the table below, the drain current of this device is 0.4A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 69 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 30V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.
NX3008NBK,215 Features
a continuous drain current (ID) of 400mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 69 ns
NX3008NBK,215 Applications
There are a lot of Nexperia USA Inc.
NX3008NBK,215 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 50pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 400mA.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.As shown in the table below, the drain current of this device is 0.4A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 69 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 30V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.
NX3008NBK,215 Features
a continuous drain current (ID) of 400mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 69 ns
NX3008NBK,215 Applications
There are a lot of Nexperia USA Inc.
NX3008NBK,215 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
NX3008NBK,215 More Descriptions
In a Pack of 150, N-Channel MOSFET, 400 mA, 30 V, 3-Pin SOT-23 Nexperia NX3008NBK, 215
N-Channel 30 V 1.4 Ohm 0.52 nC Surface Mount Trench Mosfet - SOT-23
Power Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
30V 400mA 1.14W 1.4¦¸@4.5V,350mA 1.1V@250¦ÌA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
NX3008NBK - 30 V, 400 mA N-channel Trench MOSFET
Trans MOSFET N-CH 30V 0.4A Automotive 3-Pin SOT-23 T/R
MOSFET, N CH, 30V, 400MA, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:400mA; Source Voltage Vds:30V; On Resistance
MOSFET, N CH, 30V, 400MA, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 400mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: -0.8A; Voltage Vgs th Max: 8V
N-Channel 30 V 1.4 Ohm 0.52 nC Surface Mount Trench Mosfet - SOT-23
Power Field-Effect Transistor, 0.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
30V 400mA 1.14W 1.4¦¸@4.5V,350mA 1.1V@250¦ÌA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
NX3008NBK - 30 V, 400 mA N-channel Trench MOSFET
Trans MOSFET N-CH 30V 0.4A Automotive 3-Pin SOT-23 T/R
MOSFET, N CH, 30V, 400MA, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:400mA; Source Voltage Vds:30V; On Resistance
MOSFET, N CH, 30V, 400MA, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 400mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: -0.8A; Voltage Vgs th Max: 8V
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