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NVTFS5826NLTAG

ON Semiconductor NVTFS5826NLTAG

Part Number:
NVTFS5826NLTAG
Manufacturer:
ON Semiconductor
Ventron No:
2481652-NVTFS5826NLTAG
Description:
MOSFET N-CH 60V 20A 8WDFN
ECAD Model:
Datasheet:
NVTFS5826NLTAG

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Specifications
ON Semiconductor NVTFS5826NLTAG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVTFS5826NLTAG.
  • Lifecycle Status
    ACTIVE, NOT REC (Last Updated: 2 days ago)
  • Factory Lead Time
    18 Weeks
  • Contact Plating
    Tin
  • Surface Mount
    YES
  • Number of Pins
    8
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    3.2W
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Pin Count
    8
  • JESD-30 Code
    S-PDSO-F5
  • Number of Elements
    1
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    22W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9 ns
  • Halogen Free
    Halogen Free
  • Rise Time
    29ns
  • Drain to Source Voltage (Vdss)
    60V
  • Polarity/Channel Type
    N-CHANNEL
  • Fall Time (Typ)
    21 ns
  • Turn-Off Delay Time
    14 ns
  • Continuous Drain Current (ID)
    7.6A
  • Threshold Voltage
    2.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    20A
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance
    850pF
  • Avalanche Energy Rating (Eas)
    20 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Drain to Source Resistance
    24mOhm
  • Rds On Max
    24 mΩ
  • Height
    750μm
  • Length
    3.15mm
  • Width
    3.15mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NVTFS5826NLTAG Description
NVTFS5826NLTAG is a 60V Single N-Channel Power MOSFET. The onsemi NVTFS5826NLTAG can be applied in Motor drivers, Solenoid Drivers, Lamp Driver, Automotive engine controllers, and Automotive body controllers due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor NVTFS5826NLTAG is in the WDFN-8 package with 22W power dissipation.

NVTFS5826NLTAG Features
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFS5826NLWF ? Wettable Flanks Product
AEC?Q101 Qualified and PPAP Capable
Pb?Free and are RoHS Compliant

NVTFS5826NLTAG Applications
Motor driver
Solenoid Driver
Lamp Driver
Automotive engine controllers
Automotive body controllers
NVTFS5826NLTAG More Descriptions
Power MOSFET 60V, 20A, 24 mOhm, Single N-Channel, u8FL, Logic Level.
NVTFS5826NLTAG N-channel MOSFET Transistor, 20 A, 60 V, 8-Pin WDFN | ON Semiconductor NVTFS5826NLTAG
Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R
Mosfet, N-Ch, 60V, 7.6A, Wdfn-8; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.6A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to NVTFS5826NLTAG.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Surface Mount
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Halogen Free
    Rise Time
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Avalanche Energy Rating (Eas)
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Terminal Finish
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Mount
    Reach Compliance Code
    Configuration
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    View Compare
  • NVTFS5826NLTAG
    NVTFS5826NLTAG
    ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 2 days ago)
    18 Weeks
    Tin
    YES
    8
    Tape & Reel (TR)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    175°C
    -55°C
    FET General Purpose Power
    3.2W
    DUAL
    FLAT
    8
    S-PDSO-F5
    1
    Single
    ENHANCEMENT MODE
    22W
    DRAIN
    9 ns
    Halogen Free
    29ns
    60V
    N-CHANNEL
    21 ns
    14 ns
    7.6A
    2.5V
    20V
    20A
    60V
    850pF
    20 mJ
    METAL-OXIDE SEMICONDUCTOR
    24mOhm
    24 mΩ
    750μm
    3.15mm
    3.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NVTFS4823NTAG
    NVTFS4823NTAG
    ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 4 days ago)
    23 Weeks
    -
    YES
    8
    Tape & Reel (TR)
    2011
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    -
    FET General Purpose Power
    -
    DUAL
    FLAT
    8
    S-PDSO-F5
    1
    Single
    ENHANCEMENT MODE
    21W
    DRAIN
    12 ns
    Halogen Free
    22ns
    -
    -
    4 ns
    14 ns
    30A
    -
    20V
    -
    30V
    -
    -
    -
    -
    -
    750μm
    3.15mm
    3.15mm
    -
    No
    ROHS3 Compliant
    Lead Free
    Surface Mount
    8-PowerWDFN
    SILICON
    -55°C~175°C TJ
    Tin (Sn)
    MOSFET (Metal Oxide)
    3.1W Ta 21W Tc
    N-Channel
    10.5m Ω @ 15A, 10V
    2.5V @ 250μA
    750pF @ 12V
    13A Ta
    6nC @ 4.5V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    NVTFS5826NLTAG vs NVTFS4823NTAG
  • NVTFS5824NLTWG
    NVTFS5824NLTWG
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 2 days ago)
    23 Weeks
    -
    -
    8
    Tape & Reel (TR)
    2015
    e3
    yes
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    Surface Mount
    8-PowerWDFN
    -
    -55°C~175°C TJ
    Tin (Sn)
    MOSFET (Metal Oxide)
    3.2W Ta 57W Tc
    N-Channel
    20.5m Ω @ 10A, 10V
    2.5V @ 250μA
    850pF @ 25V
    -
    16nC @ 10V
    4.5V 10V
    ±20V
    Surface Mount
    not_compliant
    -
    -
    -
    -
    NVTFS5826NLTAG vs NVTFS5824NLTWG
  • NVTFS4C08NTWG
    NVTFS4C08NTWG
    ON Semiconductor
    ACTIVE (Last Updated: 17 hours ago)
    18 Weeks
    -
    -
    8
    Tape & Reel (TR)
    2014
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    -
    FET General Purpose Power
    -
    DUAL
    FLAT
    -
    S-PDSO-F5
    1
    -
    ENHANCEMENT MODE
    31W
    DRAIN
    -
    -
    -
    30V
    -
    -
    -
    17A
    -
    20V
    55A
    -
    -
    20 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    Surface Mount
    8-PowerWDFN
    SILICON
    -55°C~175°C TJ
    Tin (Sn)
    MOSFET (Metal Oxide)
    3.1W Ta 31W Tc
    N-Channel
    5.9m Ω @ 30A, 10V
    2.2V @ 250μA
    1113pF @ 15V
    17A Ta
    18.2nC @ 10V
    4.5V 10V
    ±20V
    Surface Mount
    not_compliant
    SINGLE WITH BUILT-IN DIODE
    0.0059Ohm
    253A
    30V
    NVTFS5826NLTAG vs NVTFS4C08NTWG
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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