ON Semiconductor NVTFS5116PLTWG
- Part Number:
- NVTFS5116PLTWG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3072144-NVTFS5116PLTWG
- Description:
- MOSFET P-CH 60V 14A 8WDFN
- ECAD Model:
-
- Datasheet:
- NVTFS5116PLTWG
ON Semiconductor NVTFS5116PLTWG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVTFS5116PLTWG.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time18 Weeks
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Surface MountYES
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance52MOhm
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Pin Count8
- JESD-30 CodeS-PDSO-F5
- Number of Elements1
- Power Dissipation-Max3.2W Ta 21W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation21W
- Case ConnectionDRAIN
- Turn On Delay Time14 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs52m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds1258pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6A Ta
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Rise Time68ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)36 ns
- Turn-Off Delay Time24 ns
- Continuous Drain Current (ID)6A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)6A
- Drain to Source Breakdown Voltage-60V
- Avalanche Energy Rating (Eas)45 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description
The NVTFS5116PLTWG is a Single P-Channel Power MOSFET. NVTFS5116PLTW Automotive Power MOSFET in a 3x3mm flat lead package with good thermal performance for compact and efficient designs. For Enhanced Optical Inspection, a Wettable Flank Option is offered. MOSFET with AEC-Q101 qualification and PPAP capability for automotive applications.
Features
? NVTFS5116PLWF ? Wettable Flanks Product ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses
Applications
? Automotive load switch ? Motor driver ? DC-DC switch output ? Load switching ? Switch mode power supplies (SMPS)
The NVTFS5116PLTWG is a Single P-Channel Power MOSFET. NVTFS5116PLTW Automotive Power MOSFET in a 3x3mm flat lead package with good thermal performance for compact and efficient designs. For Enhanced Optical Inspection, a Wettable Flank Option is offered. MOSFET with AEC-Q101 qualification and PPAP capability for automotive applications.
Features
? NVTFS5116PLWF ? Wettable Flanks Product ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses
Applications
? Automotive load switch ? Motor driver ? DC-DC switch output ? Load switching ? Switch mode power supplies (SMPS)
NVTFS5116PLTWG More Descriptions
P-Channel 60 V 52 mOhm 3.2 W Surface Mount Power Mosfet - WDFN-8
Power MOSFET -60V -14A 52 mOhm Single P-Channel u8FL Logic Level
Single P-Channel Power MOSFET -60V, -14A, 52mΩ
MOSFET, AEC-Q101, P-CH, -60V, WDFN; Transistor Polarity: P Channel; Continuous Drain Current Id: -14A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 21W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Power MOSFET -60V -14A 52 mOhm Single P-Channel u8FL Logic Level
Single P-Channel Power MOSFET -60V, -14A, 52mΩ
MOSFET, AEC-Q101, P-CH, -60V, WDFN; Transistor Polarity: P Channel; Continuous Drain Current Id: -14A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 21W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
The three parts on the right have similar specifications to NVTFS5116PLTWG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Radiation HardeningRoHS StatusLead FreeMountReach Compliance CodeReference StandardConfigurationTransistor ApplicationDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinNumber of ChannelsView Compare
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NVTFS5116PLTWGACTIVE (Last Updated: 1 day ago)18 WeeksSurface Mount8-PowerWDFNYES8SILICON-55°C~175°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)5EAR9952MOhmTin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALFLAT8S-PDSO-F513.2W Ta 21W TcSingleENHANCEMENT MODE21WDRAIN14 nsP-Channel52m Ω @ 7A, 10V3V @ 250μAHalogen Free1258pF @ 25V6A Ta25nC @ 10V68ns60V4.5V 10V±20V36 ns24 ns6A20V6A-60V45 mJNoROHS3 CompliantLead Free---------- -
ACTIVE (Last Updated: 1 week ago)18 WeeksSurface Mount8-PowerWDFN-8SILICON-55°C~175°C TJTape & Reel (TR)2014e3yesActive1 (Unlimited)5EAR99-Tin (Sn)-MOSFET (Metal Oxide)DUALFLAT-S-PDSO-F513W Ta 26W Tc-ENHANCEMENT MODE-DRAIN-N-Channel9.4m Ω @ 30A, 10V2.1V @ 250μA-770pF @ 15V14A Ta15.2nC @ 10V-30V4.5V 10V±20V--14A-40A-10 mJ-ROHS3 CompliantLead FreeSurface Mountnot_compliantAEC-Q101SINGLE WITH BUILT-IN DIODESWITCHING0.0094Ohm152A30V-
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ACTIVE, NOT REC (Last Updated: 4 days ago)23 WeeksSurface Mount8-PowerWDFNYES8--55°C~175°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)-EAR99-Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)--8--3.2W Ta 21W TcSingle---11 nsN-Channel6.7m Ω @ 20A, 10V2.2V @ 250μAHalogen Free1570pF @ 25V16A Ta30nC @ 10V55ns40V4.5V 10V±20V40 ns20 ns16A20V40A--NoROHS3 CompliantLead Free--------1
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LAST SHIPMENTS (Last Updated: 4 days ago)23 WeeksSurface Mount8-PowerWDFNYES8SILICON-55°C~175°C TJTape & Reel (TR)2011e3yesObsolete1 (Unlimited)5EAR99-Tin (Sn)-MOSFET (Metal Oxide)DUALFLAT8S-PDSO-F513.2W Ta 21W TcSingleENHANCEMENT MODE-DRAIN10 nsN-Channel11.5m Ω @ 8.7A, 10V2.3V @ 250μAHalogen Free1462pF @ 25V11A Ta28nC @ 10V28ns-4.5V 10V±20V22 ns19 ns29A20V-60V-NoROHS3 CompliantLead Free------247A-1
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