ON Semiconductor NVTFS5824NLTWG
- Part Number:
- NVTFS5824NLTWG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3554402-NVTFS5824NLTWG
- Description:
- MOSFET N-CH 60V 20A U8FL
- Datasheet:
- NVTFS5824NLTWG
ON Semiconductor NVTFS5824NLTWG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVTFS5824NLTWG.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Reach Compliance Codenot_compliant
- Power Dissipation-Max3.2W Ta 57W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs20.5m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds850pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NVTFS5824NLTWG Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 850pF @ 25V.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NVTFS5824NLTWG Features
a 60V drain to source voltage (Vdss)
NVTFS5824NLTWG Applications
There are a lot of ON Semiconductor
NVTFS5824NLTWG applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 850pF @ 25V.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NVTFS5824NLTWG Features
a 60V drain to source voltage (Vdss)
NVTFS5824NLTWG Applications
There are a lot of ON Semiconductor
NVTFS5824NLTWG applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
NVTFS5824NLTWG More Descriptions
Power MOSFET 60V, 20A, 20.5 mOhm, Single N-Channel, u8FL, Logic Level. 5000 / Tape & Reel
Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R
Reel / Nfet U8fl 60V 20A 25Moh
Trans MOSFET N-CH 60V 7.6A Automotive 8-Pin WDFN EP T/R
Reel / Nfet U8fl 60V 20A 25Moh
The three parts on the right have similar specifications to NVTFS5824NLTWG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Terminal FinishTechnologyReach Compliance CodePower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsECCN CodeTerminal PositionTerminal FormReference StandardJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationCurrent - Continuous Drain (Id) @ 25°CContinuous Drain Current (ID)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Surface MountSubcategoryPin CountNumber of ChannelsElement ConfigurationTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Radiation HardeningDrain to Source Breakdown VoltageView Compare
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NVTFS5824NLTWGLAST SHIPMENTS (Last Updated: 2 days ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8-55°C~175°C TJTape & Reel (TR)2015e3yesObsolete1 (Unlimited)Tin (Sn)MOSFET (Metal Oxide)not_compliant3.2W Ta 57W TcN-Channel20.5m Ω @ 10A, 10V2.5V @ 250μA850pF @ 25V16nC @ 10V60V4.5V 10V±20VROHS3 CompliantLead Free---------------------------------
-
ACTIVE (Last Updated: 1 week ago)18 WeeksSurface MountSurface Mount8-PowerWDFN8-55°C~175°C TJTape & Reel (TR)2014e3yesActive1 (Unlimited)Tin (Sn)MOSFET (Metal Oxide)not_compliant3W Ta 26W TcN-Channel9.4m Ω @ 30A, 10V2.1V @ 250μA770pF @ 15V15.2nC @ 10V30V4.5V 10V±20VROHS3 CompliantLead FreeSILICON5EAR99DUALFLATAEC-Q101S-PDSO-F51SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING14A Ta14A40A0.0094Ohm152A30V10 mJ-------------
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ACTIVE, NOT REC (Last Updated: 4 days ago)23 Weeks-Surface Mount8-PowerWDFN8-55°C~175°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)Tin (Sn)MOSFET (Metal Oxide)-3.2W Ta 21W TcN-Channel6.7m Ω @ 20A, 10V2.2V @ 250μA1570pF @ 25V30nC @ 10V40V4.5V 10V±20VROHS3 CompliantLead Free--EAR99---------16A Ta16A40A----YESFET General Purpose Power81Single11 nsHalogen Free55ns40 ns20 ns20VNo-
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LAST SHIPMENTS (Last Updated: 4 days ago)23 Weeks-Surface Mount8-PowerWDFN8-55°C~175°C TJTape & Reel (TR)2011e3yesObsolete1 (Unlimited)Tin (Sn)MOSFET (Metal Oxide)-3.2W Ta 21W TcN-Channel11.5m Ω @ 8.7A, 10V2.3V @ 250μA1462pF @ 25V28nC @ 10V-4.5V 10V±20VROHS3 CompliantLead FreeSILICON5EAR99DUALFLAT-S-PDSO-F51-ENHANCEMENT MODEDRAIN-11A Ta29A--247A--YES-81Single10 nsHalogen Free28ns22 ns19 ns20VNo60V
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