ON Semiconductor NVTFS5124PLWFTAG
- Part Number:
- NVTFS5124PLWFTAG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2850114-NVTFS5124PLWFTAG
- Description:
- MOSFET P-CH 60V 8A U8FL
- Datasheet:
- NVTFS5124PLWFTAG
ON Semiconductor NVTFS5124PLWFTAG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVTFS5124PLWFTAG.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time18 Weeks
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Surface MountYES
- Number of Pins8
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Pin Count8
- Number of Channels1
- Power Dissipation-Max3W Ta 18W Tc
- Element ConfigurationSingle
- Turn On Delay Time7 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs260m Ω @ 3A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.4A Ta
- Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
- Rise Time14ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)2.4A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)6A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NVTFS5124PLWFTAG Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.4A amps.A device can conduct a maximum continuous current of [6A] according to its drain current.It is [13 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NVTFS5124PLWFTAG Features
a continuous drain current (ID) of 2.4A
the turn-off delay time is 13 ns
a 60V drain to source voltage (Vdss)
NVTFS5124PLWFTAG Applications
There are a lot of ON Semiconductor
NVTFS5124PLWFTAG applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.4A amps.A device can conduct a maximum continuous current of [6A] according to its drain current.It is [13 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NVTFS5124PLWFTAG Features
a continuous drain current (ID) of 2.4A
the turn-off delay time is 13 ns
a 60V drain to source voltage (Vdss)
NVTFS5124PLWFTAG Applications
There are a lot of ON Semiconductor
NVTFS5124PLWFTAG applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
NVTFS5124PLWFTAG More Descriptions
Power Field-Effect Transistor, 6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
Power MOSFET -60V -8A 260 mOhm Single P-Channel u8FL Logic Level
Trans MOSFET P-CH 60V 2.4A Automotive 8-Pin WDFN EP T/R
Single P-Channel Power MOSFET -60V, -8A, 260mΩ
Mosfet, P-Ch, 60V, 6A, Wdfn; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; No. Of Pins:8Pinsrohs Compliant: Yes |Onsemi NVTFS5124PLWFTAG
Power MOSFET -60V -8A 260 mOhm Single P-Channel u8FL Logic Level
Trans MOSFET P-CH 60V 2.4A Automotive 8-Pin WDFN EP T/R
Single P-Channel Power MOSFET -60V, -8A, 260mΩ
Mosfet, P-Ch, 60V, 6A, Wdfn; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; No. Of Pins:8Pinsrohs Compliant: Yes |Onsemi NVTFS5124PLWFTAG
The three parts on the right have similar specifications to NVTFS5124PLWFTAG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryTechnologyPin CountNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Radiation HardeningRoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsOperating ModePower DissipationCase ConnectionDrain to Source Breakdown VoltageHeightLengthWidthResistanceAvalanche Energy Rating (Eas)MountReach Compliance CodeConfigurationDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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NVTFS5124PLWFTAGACTIVE (Last Updated: 4 days ago)18 WeeksSurface Mount8-PowerWDFNYES8-55°C~175°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)EAR99Tin (Sn)Other TransistorsMOSFET (Metal Oxide)813W Ta 18W TcSingle7 nsP-Channel260m Ω @ 3A, 10V2.5V @ 250μAHalogen Free250pF @ 25V2.4A Ta6nC @ 10V14ns60V4.5V 10V±20V10 ns13 ns2.4A20V6ANoROHS3 CompliantLead Free----------------------
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ACTIVE, NOT REC (Last Updated: 4 days ago)23 WeeksSurface Mount8-PowerWDFNYES8-55°C~175°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)8-3.1W Ta 21W TcSingle12 nsN-Channel10.5m Ω @ 15A, 10V2.5V @ 250μAHalogen Free750pF @ 12V13A Ta6nC @ 4.5V22ns-4.5V 10V±20V4 ns14 ns30A20V-NoROHS3 CompliantLead FreeSILICON5DUALFLATS-PDSO-F51ENHANCEMENT MODE21WDRAIN30V750μm3.15mm3.15mm--------
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ACTIVE (Last Updated: 1 day ago)18 WeeksSurface Mount8-PowerWDFNYES8-55°C~175°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)EAR99Tin (Sn)Other TransistorsMOSFET (Metal Oxide)8-3.2W Ta 21W TcSingle14 nsP-Channel52m Ω @ 7A, 10V3V @ 250μAHalogen Free1258pF @ 25V6A Ta25nC @ 10V68ns60V4.5V 10V±20V36 ns24 ns6A20V6ANoROHS3 CompliantLead FreeSILICON5DUALFLATS-PDSO-F51ENHANCEMENT MODE21WDRAIN-60V---52MOhm45 mJ------
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ACTIVE (Last Updated: 17 hours ago)18 WeeksSurface Mount8-PowerWDFN-8-55°C~175°C TJTape & Reel (TR)2014e3yesActive1 (Unlimited)EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)--3.1W Ta 31W Tc--N-Channel5.9m Ω @ 30A, 10V2.2V @ 250μA-1113pF @ 15V17A Ta18.2nC @ 10V-30V4.5V 10V±20V--17A20V55A-ROHS3 CompliantLead FreeSILICON5DUALFLATS-PDSO-F51ENHANCEMENT MODE31WDRAIN-----20 mJSurface Mountnot_compliantSINGLE WITH BUILT-IN DIODE0.0059Ohm253A30V
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