ON Semiconductor NVF3055-100T1G

NVF3055-100T1G Overview
The maximum input capacitance of this device is 455pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.As shown in the table below, the drain current of this device is 3A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 21 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

NVF3055-100T1G Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 21 ns


NVF3055-100T1G Applications
There are a lot of ON Semiconductor
NVF3055-100T1G applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,