ON Semiconductor NTR4503NT1G
- Part Number:
- NTR4503NT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2478965-NTR4503NT1G
- Description:
- MOSFET N-CH 30V 1.5A SOT-23
- Datasheet:
- NTR4503NT1G
ON Semiconductor NTR4503NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTR4503NT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance85MOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating2.5A
- Pin Count3
- Number of Elements1
- Power Dissipation-Max420mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation730mW
- Turn On Delay Time5.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs110m Ω @ 2.5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 24V
- Current - Continuous Drain (Id) @ 25°C1.5A Ta
- Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
- Rise Time6.7ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)6.7 ns
- Turn-Off Delay Time13.6 ns
- Continuous Drain Current (ID)2.5A
- Threshold Voltage1.75V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Nominal Vgs1.75 V
- Feedback Cap-Max (Crss)25 pF
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTR4503NT1G Description
NTR4503NT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor based on the leading planar technology for low gate charge and fast switching. Moreover, it is well suited for a low-voltage gate drive based on rated 4.5 V. Its SOT-23 package is used to save board space.
NTR4503NT1G Features
Low RDS (on)
High efficiency
Low-voltage gate drive
Leading planar technology
Available in the SOT-23 surface-mount package
NTR4503NT1G Applications
DC?DC conversion
Load/power switch for portables
Load/power switch for computing
NTR4503NT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor based on the leading planar technology for low gate charge and fast switching. Moreover, it is well suited for a low-voltage gate drive based on rated 4.5 V. Its SOT-23 package is used to save board space.
NTR4503NT1G Features
Low RDS (on)
High efficiency
Low-voltage gate drive
Leading planar technology
Available in the SOT-23 surface-mount package
NTR4503NT1G Applications
DC?DC conversion
Load/power switch for portables
Load/power switch for computing
NTR4503NT1G More Descriptions
NTR4503NT1G N-channel MOSFET Transistor; 2.5 A; 30 V; 3-Pin SOT-23
Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Single N-Channel Power MOSFET 30V, 2.5A, 110mΩ Small Signal MOSFET 30V 2.5A 140 mOhm Single N-Channel SOT-23
N-Channel 30 V 110 mOhm 0.42 W Surface Mount Power MOSFET - SOT-23
Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 1.5A SOT-23
30V 1.5A 420mW 110m´Î@10V2.5A 3V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
N Channel Mosfet, 30V, 2.5A, Sot-23, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:730Mw Rohs Compliant: Yes |Onsemi NTR4503NT1G.
Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Single N-Channel Power MOSFET 30V, 2.5A, 110mΩ Small Signal MOSFET 30V 2.5A 140 mOhm Single N-Channel SOT-23
N-Channel 30 V 110 mOhm 0.42 W Surface Mount Power MOSFET - SOT-23
Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 1.5A SOT-23
30V 1.5A 420mW 110m´Î@10V2.5A 3V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
N Channel Mosfet, 30V, 2.5A, Sot-23, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:730Mw Rohs Compliant: Yes |Onsemi NTR4503NT1G.
The three parts on the right have similar specifications to NTR4503NT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountPublishedTerminal FinishPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)WeightMax Operating TemperatureMin Operating TemperatureMax Power DissipationNumber of ChannelsDrain to Source Voltage (Vdss)Drain to Source ResistanceView Compare
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NTR4503NT1GACTIVE (Last Updated: 3 days ago)4 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)3EAR9985MOhmFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING2.5A31420mW TaSingleENHANCEMENT MODE730mW5.8 nsN-ChannelSWITCHING110m Ω @ 2.5A, 10V3V @ 250μA250pF @ 24V1.5A Ta7nC @ 10V6.7ns4.5V 10V±20V6.7 ns13.6 ns2.5A1.75V20V30V1.75 V25 pF1.01mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free-----------------
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---Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)e0-Obsolete1 (Unlimited)3EAR99-FET General Purpose Power20VMOSFET (Metal Oxide)DUALGULL WING3.2A311.25W TjSingleENHANCEMENT MODE1.25W-N-ChannelSWITCHING80m Ω @ 3.6A, 4.5V1.2V @ 250μA200pF @ 10V3.2A Ta6nC @ 4.5V12ns1.8V 4.5V±12V12 ns12 ns3.2A-12V20V-------Non-RoHS CompliantContains LeadSurface Mount2008Tin/Lead (Sn/Pb)240not_compliant30Not Qualified0.08Ohm10A-------
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-2 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3----Tape & Reel (TR)e3-Active1 (Unlimited)-EAR99----------Single--6.5 ns-------12ns--3 ns12 ns3.2A-12V--------ROHS3 Compliant-Surface Mount2016Tin (Sn)------1.437803g150°C-55°C1.25W120V70mOhm
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LAST SHIPMENTS (Last Updated: 1 week ago)--Surface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)3EAR9975mOhmOther Transistors-MOSFET (Metal Oxide)DUALGULL WING-31480mW TaSingleENHANCEMENT MODE--P-ChannelSWITCHING75m Ω @ 2.2A, 10V1.4V @ 250μA720pF @ 15V2.2A Ta15.6nC @ 10V-2.5V 10V±12V--2.2A----------RoHS CompliantLead Free-2010Tin (Sn)NOT SPECIFIED-NOT SPECIFIEDNot Qualified-------30V-
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