NTR4003NT1G

ON Semiconductor NTR4003NT1G

Part Number:
NTR4003NT1G
Manufacturer:
ON Semiconductor
Ventron No:
2848714-NTR4003NT1G
Description:
MOSFET N-CH 30V 500MA SOT-23
ECAD Model:
Datasheet:
NTR4003NT1G

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Specifications
ON Semiconductor NTR4003NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTR4003NT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    1Ohm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    690mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    690mW
  • Turn On Delay Time
    16.7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.5 Ω @ 10mA, 4V
  • Vgs(th) (Max) @ Id
    1.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    21pF @ 5V
  • Current - Continuous Drain (Id) @ 25°C
    500mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.15nC @ 5V
  • Rise Time
    47.9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    47.9 ns
  • Turn-Off Delay Time
    65.1 ns
  • Continuous Drain Current (ID)
    500mA
  • Threshold Voltage
    1.4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.5A
  • Drain to Source Breakdown Voltage
    30V
  • Nominal Vgs
    1.4 V
  • Height
    1.01mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTR4003NT1G Description
The NTR4003NT1G is a small-signal N-channel MOSFET with a drain-source voltage of 30V and a continuous drain current of 0.5A. It can be used as a level shifter, logic switch, or low-side load switch in notebooks. NTR4003NT1G has an operating temperature of -55°C to 150°C TJ, the maximum power dissipation of 690mW, and a resistance of 1Ohm. It comes in TO-236-3, SC-59, and SOT-23-3 package options.

NTR4003NT1G Features
Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design
Low Gate Charge for Fast Switching
ESD Protected Gate
SOT?23 Package Provides Excellent Thermal Performance
Minimum Breakdown Voltage Rating of 30 V
NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free and are RoHS Compliant 

NTR4003NT1G Applications
Power Management
Computers & Computer Peripherals
Portable Devices
Industrial
NTR4003NT1G More Descriptions
Transistor: N-MOSFET; unipolar; 30V; 0.5A; 1.5ohm; 0.69W; -55 150 deg.C; SMD; SOT23; AEC-Q100
NTR4003NT1G N-channel MOSFET Transistor; 0.56 A; 30 V; 3-Pin SOT-23
Single N-Channel Small Signal MOSFET 30V, 560mA, 1.5Ω
MOSFET N-CH 30V 500MA SOT-23 / Trans MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R
Single N-Channel 30 V 2 Ohm 1.15 nC 0.69 W Silicon SMT Mosfet - SOT-23
NFET SOT23 30V .56A 1500M; Transistor Polarity:N Channel; Continuous Drain Current Id:560µA; Source Voltage Vds:30V; On Resistance
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, N, 30V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 560mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 4V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 830mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 560mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.4V; Voltage Vgs Rds on Measurement: 4V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 560 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = 20 / Fall Time ns = 64.2 / Rise Time ns = 47.9 / Turn-OFF Delay Time ns = 65.1 / Turn-ON Delay Time ns = 16.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 690
Product Comparison
The three parts on the right have similar specifications to NTR4003NT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Weight
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Number of Channels
    Drain to Source Voltage (Vdss)
    Drain to Source Resistance
    Voltage - Rated DC
    Current Rating
    Halogen Free
    Max Junction Temperature (Tj)
    View Compare
  • NTR4003NT1G
    NTR4003NT1G
    ACTIVE (Last Updated: 3 days ago)
    10 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    1Ohm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    690mW Ta
    Single
    ENHANCEMENT MODE
    690mW
    16.7 ns
    N-Channel
    SWITCHING
    1.5 Ω @ 10mA, 4V
    1.4V @ 250μA
    21pF @ 5V
    500mA Ta
    1.15nC @ 5V
    47.9ns
    2.5V 4V
    ±20V
    47.9 ns
    65.1 ns
    500mA
    1.4V
    20V
    0.5A
    30V
    1.4 V
    1.01mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTR4501NST1G
    -
    2 Weeks
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -
    Tape & Reel (TR)
    2016
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Single
    -
    -
    6.5 ns
    -
    -
    -
    -
    -
    -
    -
    12ns
    -
    -
    3 ns
    12 ns
    3.2A
    -
    12V
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Surface Mount
    1.437803g
    Tin (Sn)
    150°C
    -55°C
    1.25W
    1
    20V
    70mOhm
    -
    -
    -
    -
  • NTR4501NT1G
    ACTIVE (Last Updated: 3 days ago)
    11 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    70MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1.25W Tj
    Single
    ENHANCEMENT MODE
    1.25W
    6.5 ns
    N-Channel
    SWITCHING
    80m Ω @ 3.6A, 4.5V
    1.2V @ 250μA
    200pF @ 10V
    3.2A Ta
    6nC @ 4.5V
    12ns
    1.8V 4.5V
    ±12V
    12 ns
    12 ns
    3.2A
    1.2V
    12V
    -
    20V
    1.2 V
    940μm
    2.9mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    20V
    3.2A
    Halogen Free
    -
  • NTR4170NT1G
    ACTIVE (Last Updated: 1 day ago)
    14 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    55MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    3
    1
    480mW Ta
    Single
    ENHANCEMENT MODE
    480mW
    6.4 ns
    N-Channel
    SWITCHING
    55m Ω @ 3.2A, 10V
    1.4V @ 250μA
    432pF @ 15V
    -
    4.76nC @ 4.5V
    9.9ns
    2.5V 10V
    ±12V
    3.5 ns
    15.1 ns
    2.4A
    1V
    12V
    -
    30V
    1 V
    1.11mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    -
    -
    150°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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