ON Semiconductor NTR4003NT1G
- Part Number:
- NTR4003NT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2848714-NTR4003NT1G
- Description:
- MOSFET N-CH 30V 500MA SOT-23
- Datasheet:
- NTR4003NT1G
ON Semiconductor NTR4003NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTR4003NT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1Ohm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Power Dissipation-Max690mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation690mW
- Turn On Delay Time16.7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.5 Ω @ 10mA, 4V
- Vgs(th) (Max) @ Id1.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds21pF @ 5V
- Current - Continuous Drain (Id) @ 25°C500mA Ta
- Gate Charge (Qg) (Max) @ Vgs1.15nC @ 5V
- Rise Time47.9ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4V
- Vgs (Max)±20V
- Fall Time (Typ)47.9 ns
- Turn-Off Delay Time65.1 ns
- Continuous Drain Current (ID)500mA
- Threshold Voltage1.4V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.5A
- Drain to Source Breakdown Voltage30V
- Nominal Vgs1.4 V
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTR4003NT1G Description
The NTR4003NT1G is a small-signal N-channel MOSFET with a drain-source voltage of 30V and a continuous drain current of 0.5A. It can be used as a level shifter, logic switch, or low-side load switch in notebooks. NTR4003NT1G has an operating temperature of -55°C to 150°C TJ, the maximum power dissipation of 690mW, and a resistance of 1Ohm. It comes in TO-236-3, SC-59, and SOT-23-3 package options.
NTR4003NT1G Features
Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design
Low Gate Charge for Fast Switching
ESD Protected Gate
SOT?23 Package Provides Excellent Thermal Performance
Minimum Breakdown Voltage Rating of 30 V
NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free and are RoHS Compliant
NTR4003NT1G Applications
Power Management
Computers & Computer Peripherals
Portable Devices
Industrial
The NTR4003NT1G is a small-signal N-channel MOSFET with a drain-source voltage of 30V and a continuous drain current of 0.5A. It can be used as a level shifter, logic switch, or low-side load switch in notebooks. NTR4003NT1G has an operating temperature of -55°C to 150°C TJ, the maximum power dissipation of 690mW, and a resistance of 1Ohm. It comes in TO-236-3, SC-59, and SOT-23-3 package options.
NTR4003NT1G Features
Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design
Low Gate Charge for Fast Switching
ESD Protected Gate
SOT?23 Package Provides Excellent Thermal Performance
Minimum Breakdown Voltage Rating of 30 V
NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free and are RoHS Compliant
NTR4003NT1G Applications
Power Management
Computers & Computer Peripherals
Portable Devices
Industrial
NTR4003NT1G More Descriptions
Transistor: N-MOSFET; unipolar; 30V; 0.5A; 1.5ohm; 0.69W; -55 150 deg.C; SMD; SOT23; AEC-Q100
NTR4003NT1G N-channel MOSFET Transistor; 0.56 A; 30 V; 3-Pin SOT-23
Single N-Channel Small Signal MOSFET 30V, 560mA, 1.5Ω
MOSFET N-CH 30V 500MA SOT-23 / Trans MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R
Single N-Channel 30 V 2 Ohm 1.15 nC 0.69 W Silicon SMT Mosfet - SOT-23
NFET SOT23 30V .56A 1500M; Transistor Polarity:N Channel; Continuous Drain Current Id:560µA; Source Voltage Vds:30V; On Resistance
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, N, 30V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 560mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 4V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 830mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 560mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.4V; Voltage Vgs Rds on Measurement: 4V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 560 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = 20 / Fall Time ns = 64.2 / Rise Time ns = 47.9 / Turn-OFF Delay Time ns = 65.1 / Turn-ON Delay Time ns = 16.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 690
NTR4003NT1G N-channel MOSFET Transistor; 0.56 A; 30 V; 3-Pin SOT-23
Single N-Channel Small Signal MOSFET 30V, 560mA, 1.5Ω
MOSFET N-CH 30V 500MA SOT-23 / Trans MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R
Single N-Channel 30 V 2 Ohm 1.15 nC 0.69 W Silicon SMT Mosfet - SOT-23
NFET SOT23 30V .56A 1500M; Transistor Polarity:N Channel; Continuous Drain Current Id:560µA; Source Voltage Vds:30V; On Resistance
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, N, 30V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 560mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 4V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 830mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 560mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.4V; Voltage Vgs Rds on Measurement: 4V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 560 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = 20 / Fall Time ns = 64.2 / Rise Time ns = 47.9 / Turn-OFF Delay Time ns = 65.1 / Turn-ON Delay Time ns = 16.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 690
The three parts on the right have similar specifications to NTR4003NT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountWeightTerminal FinishMax Operating TemperatureMin Operating TemperatureMax Power DissipationNumber of ChannelsDrain to Source Voltage (Vdss)Drain to Source ResistanceVoltage - Rated DCCurrent RatingHalogen FreeMax Junction Temperature (Tj)View Compare
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NTR4003NT1GACTIVE (Last Updated: 3 days ago)10 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR991OhmFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING2604031690mW TaSingleENHANCEMENT MODE690mW16.7 nsN-ChannelSWITCHING1.5 Ω @ 10mA, 4V1.4V @ 250μA21pF @ 5V500mA Ta1.15nC @ 5V47.9ns2.5V 4V±20V47.9 ns65.1 ns500mA1.4V20V0.5A30V1.4 V1.01mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free--------------
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-2 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3----Tape & Reel (TR)2016e3-Active1 (Unlimited)-EAR99----------Single--6.5 ns-------12ns--3 ns12 ns3.2A-12V--------ROHS3 Compliant-Surface Mount1.437803gTin (Sn)150°C-55°C1.25W120V70mOhm----
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ACTIVE (Last Updated: 3 days ago)11 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR9970MOhmFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING26040311.25W TjSingleENHANCEMENT MODE1.25W6.5 nsN-ChannelSWITCHING80m Ω @ 3.6A, 4.5V1.2V @ 250μA200pF @ 10V3.2A Ta6nC @ 4.5V12ns1.8V 4.5V±12V12 ns12 ns3.2A1.2V12V-20V1.2 V940μm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free---------20V3.2AHalogen Free-
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ACTIVE (Last Updated: 1 day ago)14 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR9955MOhmFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING--31480mW TaSingleENHANCEMENT MODE480mW6.4 nsN-ChannelSWITCHING55m Ω @ 3.2A, 10V1.4V @ 250μA432pF @ 15V-4.76nC @ 4.5V9.9ns2.5V 10V±12V3.5 ns15.1 ns2.4A1V12V-30V1 V1.11mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free------1-----150°C
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