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NTP45N06G

ON Semiconductor NTP45N06G

Part Number:
NTP45N06G
Manufacturer:
ON Semiconductor
Ventron No:
2851661-NTP45N06G
Description:
MOSFET N-CH 60V 45A TO220AB
ECAD Model:
Datasheet:
NTB,NTP45N06

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Specifications
ON Semiconductor NTP45N06G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTP45N06G.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    45A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    2.4W Ta 125W Tj
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    125W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    26m Ω @ 22.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1725pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    45A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    46nC @ 10V
  • Rise Time
    101ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    106 ns
  • Turn-Off Delay Time
    33 ns
  • Continuous Drain Current (ID)
    45A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.026Ohm
  • Drain to Source Breakdown Voltage
    60V
  • Avalanche Energy Rating (Eas)
    240 mJ
  • Nominal Vgs
    2.8 V
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
NTP45N06G Description
NTP45N06G is a 60v N–Channel Power MOSFET. The onsemi NTP45N06G is designed for low voltage, high-speed switching applications in power supplies, converters and power motor controls, and bridge circuits. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET NTP45N06G is in the TO-220-3 package with 125W power dissipation.

NTP45N06G Features
Higher Current Rating
Lower RDS(on)
Lower VDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge

NTP45N06G Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
NTP45N06G More Descriptions
Trans MOSFET N-CH 60V 45A 3-Pin (3 Tab) TO-220AB Rail
Power Field-Effect Transistor, 45A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:45A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.8V ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to NTP45N06G.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    REACH SVHC
    RoHS Status
    Lead Free
    Additional Feature
    HTS Code
    Reach Compliance Code
    JESD-30 Code
    Pulsed Drain Current-Max (IDM)
    Surface Mount
    Pbfree Code
    Terminal Position
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    View Compare
  • NTP45N06G
    NTP45N06G
    ON Semiconductor
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    2004
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    260
    45A
    40
    3
    Not Qualified
    1
    2.4W Ta 125W Tj
    Single
    ENHANCEMENT MODE
    125W
    DRAIN
    N-Channel
    SWITCHING
    26m Ω @ 22.5A, 10V
    4V @ 250μA
    1725pF @ 25V
    45A Ta
    46nC @ 10V
    101ns
    10V
    ±20V
    106 ns
    33 ns
    45A
    TO-220AB
    20V
    0.026Ohm
    60V
    240 mJ
    2.8 V
    No SVHC
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTP45N06L
    NTP45N06L
    ON Semiconductor
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    2005
    e0
    Obsolete
    1 (Unlimited)
    3
    Tin/Lead (Sn80Pb20)
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    240
    45A
    30
    3
    Not Qualified
    1
    2.4W Ta 125W Tj
    Single
    ENHANCEMENT MODE
    125W
    DRAIN
    N-Channel
    SWITCHING
    28m Ω @ 22.5A, 5V
    2V @ 250μA
    1700pF @ 25V
    45A Ta
    32nC @ 5V
    341ns
    5V
    ±15V
    158 ns
    36 ns
    45A
    TO-220AB
    15V
    0.028Ohm
    60V
    240 mJ
    -
    -
    Non-RoHS Compliant
    Contains Lead
    LOGIC LEVEL COMPATIBLE
    8541.29.00.95
    not_compliant
    R-PSFM-T3
    150A
    -
    -
    -
    -
    -
    -
    -
    NTP45N06G vs NTP45N06L
  • NTP45N06
    NTP45N06
    ON Semiconductor
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    2005
    e0
    Obsolete
    1 (Unlimited)
    3
    Tin/Lead (Sn/Pb)
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    240
    45A
    30
    3
    Not Qualified
    1
    2.4W Ta 125W Tj
    Single
    ENHANCEMENT MODE
    125W
    DRAIN
    N-Channel
    SWITCHING
    26m Ω @ 22.5A, 10V
    4V @ 250μA
    1725pF @ 25V
    45A Ta
    46nC @ 10V
    101ns
    10V
    ±20V
    106 ns
    33 ns
    45A
    TO-220AB
    20V
    0.026Ohm
    60V
    240 mJ
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    8541.29.00.95
    not_compliant
    R-PSFM-T3
    150A
    -
    -
    -
    -
    -
    -
    -
    NTP45N06G vs NTP45N06
  • NTP4302G
    NTP4302G
    ON Semiconductor
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    -
    e3
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    260
    -
    40
    3
    COMMERCIAL
    1
    80W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    N-Channel
    SWITCHING
    9.3m Ω @ 37A, 10V
    3V @ 250μA
    2.4pF @ 24V
    74A Tc
    28nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    TO-220AB
    -
    0.0093Ohm
    -
    722 mJ
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    R-PSFM-T3
    175A
    NO
    yes
    SINGLE
    SINGLE WITH BUILT-IN DIODE
    30V
    74A
    30V
    NTP45N06G vs NTP4302G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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