ON Semiconductor NTMFS4C06NT1G
- Part Number:
- NTMFS4C06NT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2485217-NTMFS4C06NT1G
- Description:
- MOSFET N-CH 30V 11A SO8FL
- Datasheet:
- NTMFS4C06NT1G
ON Semiconductor NTMFS4C06NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMFS4C06NT1G.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time16 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Surface MountYES
- Number of Pins5
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max770mW Ta 30.5W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1683pF @ 15V
- Current - Continuous Drain (Id) @ 25°C11A Ta 69A Tc
- Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
- Rise Time28ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3 ns
- Turn-Off Delay Time24 ns
- Continuous Drain Current (ID)69A
- Threshold Voltage2.1V
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.004Ohm
- DS Breakdown Voltage-Min30V
- Height1.05mm
- Length6.1mm
- Width5.1mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTMFS4C06NT1G Description
NTMFS4C06NT1G is a 30 V single n-channel Power MOSFET in SO?8 FL pacakge. It is operated under the temperature of 150°C, featuring low capacitance, Pb-free, and RoHS compliant. The NTMFS4C06NT1G MOSFET is ideal for converters and CPU power delivery.
NTMFS4C06NT1G Features Low Capacitance to Minimize Driver Losses
Low RDS(on) to Minimize Conduction Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb?Free, Halogen Free/BFR Free, and RoHS Compliant
NTMFS4C06NT1G Applications DC?DC Converters
CPU Power Delivery
NTMFS4C06NT1G Features Low Capacitance to Minimize Driver Losses
Low RDS(on) to Minimize Conduction Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb?Free, Halogen Free/BFR Free, and RoHS Compliant
NTMFS4C06NT1G Applications DC?DC Converters
CPU Power Delivery
NTMFS4C06NT1G More Descriptions
NTMFS4C06NT1G N-channel MOSFET Transistor; 69 A; 30 V; 8-Pin SO-8FL
Mosfet Transistor, N Channel, 69 A, 30 V, 0.0032 Ohm, 10 V, 2.1 V
Single N-Channel Power MOSFET 30V, 69A, 4mΩ
N Channel Mosfet, 30V, Dfn-5; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:69A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V; Product Range:-Rohs Compliant: Yes |Onsemi NTMFS4C06NT1G
Mosfet Transistor, N Channel, 69 A, 30 V, 0.0032 Ohm, 10 V, 2.1 V
Single N-Channel Power MOSFET 30V, 69A, 4mΩ
N Channel Mosfet, 30V, Dfn-5; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:69A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V; Product Range:-Rohs Compliant: Yes |Onsemi NTMFS4C06NT1G
The three parts on the right have similar specifications to NTMFS4C06NT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRoHS StatusLead FreeTerminal FinishQualification StatusPower DissipationDrain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageSupplier Device PackageView Compare
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NTMFS4C06NT1GACTIVE (Last Updated: 6 days ago)16 WeeksTinSurface Mount8-PowerTDFNYES5SILICON-55°C~150°C TJTape & Reel (TR)2014e3yesActive1 (Unlimited)5EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDnot_compliantNOT SPECIFIED511770mW Ta 30.5W TcSingleENHANCEMENT MODEDRAIN8 nsN-ChannelSWITCHING4m Ω @ 30A, 10V2.1V @ 250μA1683pF @ 15V11A Ta 69A Tc26nC @ 10V28ns30V4.5V 10V±20V3 ns24 ns69A2.1V20V0.004Ohm30V1.05mm6.1mm5.1mmNo SVHCROHS3 CompliantLead Free-------
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LAST SHIPMENTS (Last Updated: 21 hours ago)--Surface Mount8-PowerTDFN, 5 LeadsYES5SILICON-55°C~150°C TJTape & Reel (TR)2009e3yesObsolete1 (Unlimited)5EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATNOT SPECIFIED-NOT SPECIFIED51-890mW Ta 55.5W TcSingleENHANCEMENT MODEDRAIN-N-ChannelSWITCHING3.4m Ω @ 30A, 10V2.5V @ 250μA3250pF @ 12V12.7A Ta 100A Tc53nC @ 11.5V18.9ns-4.5V 11.5V±20V7.1 ns34.2 ns20.3A-16V------RoHS CompliantLead FreeTin (Sn)Not Qualified5.9W100A30V-
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---Surface Mount8-PowerTDFN, 5 Leads----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--------890mW Ta 55.6W Tc----N-Channel-4mOhm @ 30A, 10V2.5V @ 250μA2.677pF @ 12V11A Ta 90A Tc28nC @ 4.5V-30V4.5V 11.5V±20V-----------ROHS3 Compliant------5-DFN (5x6) (8-SOFL)
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---Surface Mount8-PowerTDFN, 5 Leads----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--------880mW Ta 47.2W Tc----N-Channel-7.6mOhm @ 30A, 10V2.5V @ 250μA1.3pF @ 12V7A Ta17nC @ 4.5V-30V4.5V 11.5V±20V-----------ROHS3 Compliant------5-DFN (5x6) (8-SOFL)
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