NTMFS4C06NT1G

ON Semiconductor NTMFS4C06NT1G

Part Number:
NTMFS4C06NT1G
Manufacturer:
ON Semiconductor
Ventron No:
2485217-NTMFS4C06NT1G
Description:
MOSFET N-CH 30V 11A SO8FL
ECAD Model:
Datasheet:
NTMFS4C06NT1G

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Specifications
ON Semiconductor NTMFS4C06NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMFS4C06NT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Surface Mount
    YES
  • Number of Pins
    5
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    770mW Ta 30.5W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4m Ω @ 30A, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1683pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    11A Ta 69A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    26nC @ 10V
  • Rise Time
    28ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3 ns
  • Turn-Off Delay Time
    24 ns
  • Continuous Drain Current (ID)
    69A
  • Threshold Voltage
    2.1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.004Ohm
  • DS Breakdown Voltage-Min
    30V
  • Height
    1.05mm
  • Length
    6.1mm
  • Width
    5.1mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTMFS4C06NT1G Description NTMFS4C06NT1G is a 30 V single n-channel Power MOSFET in SO?8 FL pacakge. It is operated under the temperature of 150°C, featuring low capacitance, Pb-free, and RoHS compliant. The NTMFS4C06NT1G MOSFET is ideal for converters and CPU power delivery. 
NTMFS4C06NT1G Features Low Capacitance to Minimize Driver Losses
Low RDS(on) to Minimize Conduction Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb?Free, Halogen Free/BFR Free, and RoHS Compliant
NTMFS4C06NT1G Applications DC?DC Converters
CPU Power Delivery
NTMFS4C06NT1G More Descriptions
NTMFS4C06NT1G N-channel MOSFET Transistor; 69 A; 30 V; 8-Pin SO-8FL
Mosfet Transistor, N Channel, 69 A, 30 V, 0.0032 Ohm, 10 V, 2.1 V
Single N-Channel Power MOSFET 30V, 69A, 4mΩ
N Channel Mosfet, 30V, Dfn-5; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:69A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V; Product Range:-Rohs Compliant: Yes |Onsemi NTMFS4C06NT1G
Product Comparison
The three parts on the right have similar specifications to NTMFS4C06NT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Terminal Finish
    Qualification Status
    Power Dissipation
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Supplier Device Package
    View Compare
  • NTMFS4C06NT1G
    NTMFS4C06NT1G
    ACTIVE (Last Updated: 6 days ago)
    16 Weeks
    Tin
    Surface Mount
    8-PowerTDFN
    YES
    5
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    5
    1
    1
    770mW Ta 30.5W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    4m Ω @ 30A, 10V
    2.1V @ 250μA
    1683pF @ 15V
    11A Ta 69A Tc
    26nC @ 10V
    28ns
    30V
    4.5V 10V
    ±20V
    3 ns
    24 ns
    69A
    2.1V
    20V
    0.004Ohm
    30V
    1.05mm
    6.1mm
    5.1mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • NTMFS4846NT3G
    LAST SHIPMENTS (Last Updated: 21 hours ago)
    -
    -
    Surface Mount
    8-PowerTDFN, 5 Leads
    YES
    5
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    -
    NOT SPECIFIED
    5
    1
    -
    890mW Ta 55.5W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    -
    N-Channel
    SWITCHING
    3.4m Ω @ 30A, 10V
    2.5V @ 250μA
    3250pF @ 12V
    12.7A Ta 100A Tc
    53nC @ 11.5V
    18.9ns
    -
    4.5V 11.5V
    ±20V
    7.1 ns
    34.2 ns
    20.3A
    -
    16V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    Tin (Sn)
    Not Qualified
    5.9W
    100A
    30V
    -
  • NTMFS4836NT1G
    -
    -
    -
    Surface Mount
    8-PowerTDFN, 5 Leads
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    890mW Ta 55.6W Tc
    -
    -
    -
    -
    N-Channel
    -
    4mOhm @ 30A, 10V
    2.5V @ 250μA
    2.677pF @ 12V
    11A Ta 90A Tc
    28nC @ 4.5V
    -
    30V
    4.5V 11.5V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    5-DFN (5x6) (8-SOFL)
  • NTMFS4744NT1G
    -
    -
    -
    Surface Mount
    8-PowerTDFN, 5 Leads
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    880mW Ta 47.2W Tc
    -
    -
    -
    -
    N-Channel
    -
    7.6mOhm @ 30A, 10V
    2.5V @ 250μA
    1.3pF @ 12V
    7A Ta
    17nC @ 4.5V
    -
    30V
    4.5V 11.5V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    5-DFN (5x6) (8-SOFL)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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