ON Semiconductor NTLJF3118NTBG

Name: NTLJF3118NTBG
Brand: ON Semiconductor
SKU: 3586683-NTLJF3118NTBG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTLJF3118NTBG

Manufacturer:: ON Semiconductor

Ventron No:: 3586683-NTLJF3118NTBG

Description:: MOSFET N-CH 20V 2.6A 6-WDFN

ECAD Model:

Datasheet:: NTLJF3118NTBG

Specifications

ON Semiconductor NTLJF3118NTBG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTLJF3118NTBG.

Mounting Type
Surface Mount
Package / Case
6-WDFN Exposed Pad
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
265
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
6
JESD-30 Code
S-XDSO-C6
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
700mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
65m Ω @ 3.8A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
271pF @ 10V
Current - Continuous Drain (Id) @ 25°C
2.6A Ta
Gate Charge (Qg) (Max) @ Vgs
3.7nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±12V
Drain Current-Max (Abs) (ID)
2.6A
Drain-source On Resistance-Max
0.065Ohm
Pulsed Drain Current-Max (IDM)
18A
DS Breakdown Voltage-Min
20V
FET Feature
Schottky Diode (Isolated)
RoHS Status
ROHS3 Compliant

Description

NTLJF3118NTBG Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 271pF @ 10V.A device's drain current is its maximum continuous current, and this device's drain current is 2.6A.A maximum pulsed drain current of 18A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).

NTLJF3118NTBG Features
based on its rated peak drain current 18A.
a 20V drain to source voltage (Vdss)

NTLJF3118NTBG Applications
There are a lot of Rochester Electronics, LLC
NTLJF3118NTBG applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

NTLJF3118NTBG More Descriptions

Power MOSFET 20V 4.6A 65mOhm Single N-Channel WDFN6 FETKY
MOSFETs- Power and Small Signal NFET 2X2 20V 3.8A 70MOHM
Trans MOSFET N-CH 20V 3.8A 6-Pin WDFN T/R
Power Field-Effect Transistor, 2.6A I(D), 20V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to NTLJF3118NTBG.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

FET Feature

RoHS Status

Lifecycle Status

Factory Lead Time

Number of Pins

Published

ECCN Code

Resistance

Additional Feature

Subcategory

Element Configuration

Power Dissipation

Case Connection

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

Lead Free

Contact Plating

Series

Height

Length

Width

View Compare
NTLJF3118NTBG

ON Semiconductor

Surface Mount

6-WDFN Exposed Pad

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

6

MATTE TIN

MOSFET (Metal Oxide)

DUAL

C BEND

265

unknown

40

6

S-XDSO-C6

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

700mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

65m Ω @ 3.8A, 4.5V

1V @ 250μA

271pF @ 10V

2.6A Ta

3.7nC @ 4.5V

20V

1.8V 4.5V

±12V

2.6A

0.065Ohm

18A

20V

Schottky Diode (Isolated)

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTLJS3113PTAG

ON Semiconductor

Surface Mount

6-WDFN Exposed Pad

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

6

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

C BEND

-

-

-

6

-

-

1

-

700mW Ta

ENHANCEMENT MODE

P-Channel

SWITCHING

40m Ω @ 3A, 4.5V

1V @ 250μA

1329pF @ 16V

3.5A Ta

15.7nC @ 4.5V

-

1.5V 4.5V

±8V

3.5A

-

23A

-

-

RoHS Compliant

ACTIVE (Last Updated: 1 week ago)

5 Weeks

6

2007

EAR99

40MOhm

LOGIC LEVEL COMPATIBLE

Other Transistors

Single

1.9W

DRAIN

6.9 ns

17.5ns

17.5 ns

60 ns

-5.8A

8V

20V

No

Lead Free

-

-

-

-

-

NTLJF3118NTBG vs NTLJS3113PTAG
NTLJS2103PTBG

ON Semiconductor

Surface Mount

6-WDFN Exposed Pad

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

6

-

MOSFET (Metal Oxide)

DUAL

-

-

-

-

6

-

-

1

-

700mW Ta

ENHANCEMENT MODE

P-Channel

SWITCHING

40m Ω @ 3A, 4.5V

800mV @ 250μA

1157pF @ 6V

3.5A Ta

15nC @ 4.5V

-

1.2V 4.5V

±8V

5.9A

0.04Ohm

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

8 Weeks

6

2008

EAR99

-

-

Other Transistors

Single

1.9W

DRAIN

8 ns

27ns

27 ns

74 ns

7.7A

8V

12V

No

Lead Free

Tin

µCool™

750μm

2mm

2mm

NTLJF3118NTBG vs NTLJS2103PTBG
NTLJD3182FZTAG

ON Semiconductor

Surface Mount

6-WDFN Exposed Pad

YES

-

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

6

MATTE TIN

MOSFET (Metal Oxide)

DUAL

NO LEAD

NOT SPECIFIED

-

NOT SPECIFIED

6

S-PDSO-N6

COMMERCIAL

-

-

710mW Ta

-

P-Channel

-

100m Ω @ 2A, 4.5V

1V @ 250μA

450pF @ 10V

2.2A Ta

7.8nC @ 4.5V

20V

1.8V 4.5V

±8V

-

-

-

-

Schottky Diode (Isolated)

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTLJF3118NTBG vs NTLJD3182FZTAG