ON Semiconductor NTGS4141NT1G
- Part Number:
- NTGS4141NT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2849825-NTGS4141NT1G
- Description:
- MOSFET N-CH 30V 3.5A 6-TSOP
- Datasheet:
- NTGS4141NT1G
ON Semiconductor NTGS4141NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTGS4141NT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time13 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance25mOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating5A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count6
- Number of Elements1
- Power Dissipation-Max500mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1W
- Turn On Delay Time6 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs25m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds560pF @ 24V
- Current - Continuous Drain (Id) @ 25°C3.5A Ta
- Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
- Rise Time15ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)4 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)7A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)5A
- Drain to Source Breakdown Voltage30V
- Height1mm
- Length3.1mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTGS4141NT1G Description
NTGS4141NT1G is a type of N-channel power MOSFET provided by ON Semiconductor based on the leading trench process for ultra-low RDS (on). It is able to minimize on-state resistance and provide excellent switching performance. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including desktop PC, notebook PC, load switching, and more.
NTGS4141NT1G Features
Low RDS (on)
Low gate charge
Supplied in the TSOP-6 package
NTGS4141NT1G Applications
Desktop PC
Notebook PC
Load switch
NTGS4141NT1G is a type of N-channel power MOSFET provided by ON Semiconductor based on the leading trench process for ultra-low RDS (on). It is able to minimize on-state resistance and provide excellent switching performance. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including desktop PC, notebook PC, load switching, and more.
NTGS4141NT1G Features
Low RDS (on)
Low gate charge
Supplied in the TSOP-6 package
NTGS4141NT1G Applications
Desktop PC
Notebook PC
Load switch
NTGS4141NT1G More Descriptions
NTGS4141NT1G N-channel MOSFET Transistor, 7 A, 30 V, 6-Pin TSOP | ON Semiconductor NTGS4141NT1G
NTGS4141N Series 30 V 7 A 25 mOhm Surface Mount Power MOSFET - TSOP-6
Single N-Channel Power MOSFET 30V, 7A, 25mΩ
Trans MOSFET N-CH 30V 5A 6-Pin TSOP T/R
MOSFET, N CH, 30V, 0.0215OHM, 7A, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Source Voltage Vds:30V; On Resistance
MOSFET, N CH, 30V, 0.0215OHM, 7A, TSOP-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0215ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
NTGS4141N Series 30 V 7 A 25 mOhm Surface Mount Power MOSFET - TSOP-6
Single N-Channel Power MOSFET 30V, 7A, 25mΩ
Trans MOSFET N-CH 30V 5A 6-Pin TSOP T/R
MOSFET, N CH, 30V, 0.0215OHM, 7A, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Source Voltage Vds:30V; On Resistance
MOSFET, N CH, 30V, 0.0215OHM, 7A, TSOP-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0215ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
The three parts on the right have similar specifications to NTGS4141NT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishReach Compliance CodeQualification StatusDrain to Source Voltage (Vdss)JESD-30 CodeView Compare
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NTGS4141NT1GACTIVE (Last Updated: 3 days ago)13 WeeksTinSurface MountSOT-23-6YES6SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)6EAR9925mOhmFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING2605A4061500mW TaSingleENHANCEMENT MODE1W6 nsN-ChannelSWITCHING25m Ω @ 7A, 10V3V @ 250μA560pF @ 24V3.5A Ta12nC @ 10V15ns4.5V 10V±20V4 ns18 ns7A3V20V5A30V1mm3.1mm1.7mmNo SVHCNoROHS3 CompliantLead Free------
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---Surface MountSOT-23-6YES6SILICON-55°C~150°C TJTape & Reel (TR)2006e0-Obsolete3 (168 Hours)6EAR99-Other Transistors-30VMOSFET (Metal Oxide)DUALGULL WING240-3.7A3061630mW TaSingleENHANCEMENT MODE1.25W-P-ChannelSWITCHING60m Ω @ 3.7A, 10V3V @ 250μA750pF @ 15V2.6A Ta32nC @ 10V9ns4.5V 10V±20V9 ns38 ns2.6A-20V--30V-----Non-RoHS CompliantContains LeadTin/Lead (Sn/Pb)not_compliantNot Qualified30V-
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LAST SHIPMENTS (Last Updated: 3 days ago)--Surface MountSOT-23-6YES6SILICON-55°C~150°C TJTape & Reel (TR)2000e3yesObsolete1 (Unlimited)6EAR99---MOSFET (Metal Oxide)DUALGULL WING---61630mW TaSingleENHANCEMENT MODE1.25W-P-ChannelSWITCHING60m Ω @ 3.7A, 10V3V @ 250μA750pF @ 15V2.6A Ta32nC @ 10V9ns4.5V 10V±20V9 ns38 ns2.6A-20V--30V-----RoHS CompliantLead FreeTin (Sn)--30V-
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---Surface MountSOT-23-6YES---55°C~150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)6----MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIED-NOT SPECIFIED6-970mW Ta----P-Channel-31m Ω @ 4.6A, 4.5V850mV @ 250μA2.2pF @ 6V4.6A Ta21nC @ 4.5V-1.2V 4.5V±6V------------ROHS3 Compliant-MATTE TIN-COMMERCIAL8VR-PDSO-G6
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