ON Semiconductor NTGS3443T2G
- Part Number:
- NTGS3443T2G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3586685-NTGS3443T2G
- Description:
- MOSFET P-CH 20V 2.2A 6-TSOP
- Datasheet:
- NTGS3443T2G
ON Semiconductor NTGS3443T2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTGS3443T2G.
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6
- Supplier Device Package6-TSOP
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max500mW Ta
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs65mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds565pF @ 5V
- Current - Continuous Drain (Id) @ 25°C2.2A Ta
- Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- RoHS StatusROHS3 Compliant
NTGS3443T2G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 565pF @ 5V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
NTGS3443T2G Features
a 20V drain to source voltage (Vdss)
NTGS3443T2G Applications
There are a lot of Rochester Electronics, LLC
NTGS3443T2G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 565pF @ 5V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
NTGS3443T2G Features
a 20V drain to source voltage (Vdss)
NTGS3443T2G Applications
There are a lot of Rochester Electronics, LLC
NTGS3443T2G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
NTGS3443T2G More Descriptions
Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 2.2A Ta 2.2A 2W 31ns
Single P-Channel Power MOSFET -20V, -4.4A, 65mΩ
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:2A; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):65mohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-0.95V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
Single P-Channel Power MOSFET -20V, -4.4A, 65mΩ
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:2A; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):65mohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-0.95V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to NTGS3443T2G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinLifecycle StatusFactory Lead TimeContact PlatingNumber of PinsPublishedECCN CodeResistanceSubcategoryVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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NTGS3443T2GSurface MountSOT-23-66-TSOP-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)500mW TaP-Channel65mOhm @ 4.4A, 4.5V1.5V @ 250μA565pF @ 5V2.2A Ta15nC @ 4.5V20V2.5V 4.5V±12VROHS3 Compliant-----------------------------------------------
-
Surface MountSOT-23-6--55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)700mW TaP-Channel90m Ω @ 3A, 4.5V900mV @ 250μA630pF @ 10V2.2A Ta9nC @ 4.5V20V2.5V 4.5V±8VROHS3 CompliantYESSILICONe3no6TINDUALGULL WINGNOT SPECIFIEDNOT SPECIFIED6R-PDSO-G6COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING2.2A0.09Ohm20V--------------------------
-
Surface MountSOT-23-6--55°C~150°C TJTape & Reel (TR)Active1 (Unlimited)MOSFET (Metal Oxide)500mW TaN-Channel25m Ω @ 7A, 10V3V @ 250μA560pF @ 24V3.5A Ta12nC @ 10V-4.5V 10V±20VROHS3 CompliantYESSILICONe3yes6-DUALGULL WING260406--1-ENHANCEMENT MODESWITCHING5A--ACTIVE (Last Updated: 3 days ago)13 WeeksTin62006EAR9925mOhmFET General Purpose Power30V5ASingle1W6 ns15ns4 ns18 ns7A3V20V30V1mm3.1mm1.7mmNo SVHCNoLead Free
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Surface MountSOT-23-6--55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)700mW TaP-Channel40m Ω @ 4.7A, 4.5V1V @ 250μA1.053pF @ 6V3.4A Ta15nC @ 4.5V12V1.8V 4.5V±8VROHS3 CompliantYESSILICONe3yes6MATTE TINDUALGULL WING260406R-PDSO-G6COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING0.0034A0.072Ohm12V--------------------------
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